Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si‐SiO2 interface

Abstract: The experimentally observed dependence of effective surface recombination velocity Seff at the Si‐SiO2 interface on light‐induced minority carrier excess concentration is compared with theoretical predictions of an ‘‘extended Shockley–Read–Hall (SRH) formalism.’’ The calculations of SRH‐recombination rates at the Si‐SiO2 interface are based on the theory of a surface space charge layer under nonequilibrium conditions and take into account the impact of illumination level, gate metal work function, fixed oxide charge density, and the energy dependence of capture cross sections σn, σp and interface state density Dit. Applying this theory to p‐type silicon surfaces covered by high quality thermal oxides, the experimentally observed strong increase of Seff with decreasing minority carrier excess concentration could quantitatively be attributed to the combined effect of the σn/σp ratio of about 1000 at midgap and the presence of a positive fixed oxide charge density Qf of about 1×1011 charges/cm2. Due to the f...

Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions

Abstract: The nature of the surface space-charge region associated with a p-n junction is studied theoretically and experimentally. The theory of MOS structures is extended to the case where the surface space-charge region is not in equilibrium. The validity of this extension is demonstrated by capacitance and conductance measurements performed on gate-controlled planar silicon diodes of various geometries. The non-equilibrium MOS theory is then used as the basis for studying the recombination-generation process within the surface space-charge region of gate-controlled diodes. It is shown that the I–V characteristics of such diodes yield a measure of both the surface recombination-generation rate and the bulk recombination-generation rate within the surface depletion region. The surface recombination velocity in the thermally oxidized silicon structures studied is found to be of the order of 5 cm/sec.

Metal--Semiconductor Schottky Barrier Junctions and Their Applications

Abstract: 1. Physics of Schottky Barrier Junctions.- 1. Introduction.- 2. Origins of Barrier Height.- 2.1. Schottky-Mott Theory of Ideal Metal-Semiconductor Contact.- 2.2. Modifications to Schottky Theory.- 2.3. Classifications of Metal-Semiconductor Interfaces.- 2.4. Contacts on Reactive Interfaces.- 2.5. Contacts with Surface States and an Insulating Interfacial Layer.- 2.6. Contacts on Vacuum Cleaved Surfaces.- 3. Measurement of Barrier Height.- 3.1. Capacitance-Voltage Measurement.- 3.2. Current-Voltage Measurement.- 3.3. Photoelectric Measurement.- 4. Results of Barrier Height Measurements.- 4.1. Chemically Prepared Surfaces.- 4.2. Vacuum Cleaved Surfaces.- 4.3. Concluding Remarks.- 5. Capacitance-Voltage Characteristics.- 5.1. Electric Field and Potential Distribution in the Depletion Region.- 5.2. Depletion Region Capacitance.- 5.2.1. Ideal Schottky Barrier.- 5.2.2. Effect of Minority Carriers.- 5.2.3. Effect of Interfacial Layer.- 5.2.4. Effect of Deep Traps.- 6. Current-Voltage Characteristics.- 6.1. Transport Mechanisms.- 6.1.1. Diffusion and Thermionic Emission over the Barrier.- 6.1.2. Tunneling through the Barrier.- 6.1.3. Carrier Generation and Recombination in the Junction Depletion Region.- 6.1.4. Minority Carrier Injection.- 6.2. Forward Characteristics.- 6.3. Reverse Characteristics.- 7. Transient Behavior.- 8. Low-Resistance Schottky Barrier Contacts.- References.- 2. Interface Chemistry and Structure of Schottky Barrier Formation.- 1. Introduction.- 2. Perspectives on Schottky Barrier Formation.- 2.1. Introduction.- 2.2. Brief Review of Phenomenological Schottky Barrier Data.- 3. The Chemistry and Structure of the Interfacial Layer.- 3.1. Synopsis of the Layer-by-Layer Evolution.- 3.2. Some Techniques for Studying the Stages of Interface Formation.- 4. Evolution of the Interfacial Layer.- 4.1. Stage 0: The Clean Semiconductor Surface.- 4.1.1. Silicon (100) and (111) Surfaces.- 4.1.2. GaAs (110) and GaAs (100) Surfaces.- 4.2. Stage 1: The Dilute Limit (< 1/2 Monolayer).- 4.3. Stage 2: Monolayer Formation-Metal Film Nucleation.- 4.4. Stage 3: Additional Monolayers and Interdiffusion.- 4.5. Some Specific Characteristics of the Interfacial Layers.- 5. Formation of Interface States.- 5.1. Intrinsic Interface States Derived from the Metal and Semiconductor.- 5.2. Localized Defect and Impurity Related States.- 5.3. Interface States and the Stages of Interface Formation.- 6. Case Studies of the Chemistry and Structure of Schottky Barrier Formation.- 6.1. Case Studies of Silicon Schottky Barriers.- 6.1.1. Al, Ag, Cu, and Au Schottky Barriers.- 6.1.2. Silicide-Silicon Interfaces.- 6.2. Case Studies of III-V and II-VI Compound Semiconductor Schottky Barriers.- 6.2.1. The Ga-Al-As System.- 6.2.2. The GaAlAs Ternary System with Au Schottky Barriers.- 6.2.3. InP.- 6.2.4. Some II-VI Examples.- 7. Summary.- References.- 3. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions.- 1. Introduction.- 2. Selection of Semiconductor Materials.- 3. Metal-Semiconductor Systems.- 3.1. Metal-Silicon Systems.- 3.2. Metal-GaAs Systems.- 3.3. Multilayer Metallization Systems.- 4. Design Considerations.- 5. Fabrication Technology.- 5.1. Surface Processing.- 5.2. Dielectric Film Deposition.- 5.3. Ohmic Contact Formation.- 5.4. Metal Deposition.- 5.5. Other Steps.- 6. Characterization.- References.- 4. Schottky-Barrier-Type Optoelectronic Structures.- 1. Introduction.- 2. Barrier Formation in Schottky-Barrier-Type Junctions.- 3. Transport in Schottky-Barrier-Type Structures.- 3.1. MS and MIS Structures.- 3.2. SIS Structures.- 4. Schottky-Barrier-Type Optoelectronic Structures.- 4.1. Schottky-Barrier-Type Light-Emitting Structures.- 4.2. Schottky-Barrier-Type Photodiodes.- 4.3. Schottky-Barrier-Type Photovoltaic Devices.- 4.3.1. MS and MIS Photovoltaic Devices.- 4.3.2. SIS Photovoltaic Devices.- 3. Summary.- References.- 5. Schottky Barrier Photodiodes.- 1. Introduction.- 2. General Parameters of Photodiodes.- 2.1. Signal-to-Noise Ratio (S/N).- 2.2. Noise Equivalent Power (NEP).- 2.3. Detectivity (D).- 2.4. Normalized Detectivity (D*).- 2.5. Detectivity Normalized Also with Respect to the Field of View(D**).- 2.6. Resistance Area Product.- 2.7. Response Time.- 3. Selection of Materials.- 3.1. Metal Systems.- 3.2. Semiconducting Materials.- 4. Fabrication Technology.- 5. Techniques for Evaluating Device Parameters.- 5.1. Current-Voltage Characteristics.- 5.2. Capacitance-Voltage Characteristics.- 5.3. Photoelectric Measurements.- 5.4. Electron Beam Induced Current Technique.- 6. Applications.- 7. Conclusions.- References.- 6. Microwave Schottky Barrier Diodes.- 1. Introduction.- 2. Diode Design Considerations.- 2.1. Equivalent Circuit.- 2.2. Frequency Conversion.- 2.3. Basic Mixer Diode RF Parameters.- 2.3.1. Conversion Loss Theory.- 2.3.2. Noise-Temperature Ratio.- 2.3.3. Overall Receiver Noise Figure.- 2.3.4. Mixer Noise Temperature.- 2.3.5. RF Impedance.- 2.3.6. IF Impedance.- 2.3.7. Receiver Sensitivity.- 2.3.8. Doppler Shift.- 2.3.9. Typical Doppler Radar System.- 2.4. Basic Detector RF Parameters.- 2.4.1. Video Resistance (Rv).- 2.4.2. Voltage Sensitivity.- 2.4.3. Current Sensitivity ?.- 2.4.4. Minimum Detectable Signal (MDS).- 2.4.5. Tangential Signal Sensitivity (TSS).- 2.4.6. Nominal Detectable Signal (NDS).- 2.4.7. Noise Equivalent Power (NEP).- 2.4.8. Video Bandwidth.- 2.4.9. Superheterodyne vs. Single Detection.- 2.5. Mixer Configurations.- 2.5.1. Single-Ended Mixer.- 2.5.2. Single-Balanced Mixer.- 2.5.3. Double-Balanced Mixer.- 2.5.4. Image Rejection Mixer.- 2.5.5. Image Enhanced or Image Recovery Mixer.- 3. Properties of Schottky Barrier Diodes.- 3.1. Diode Theory.- 3.2. DC Parameters.- 3.2.1. Junction Capacitance.- 3.2.2. Overlay Capacitance.- 3.2.3. Series Resistance.- 3.2.4. Figure of Merit.- 3.3. Semiconductor Materials.- 3.4. Epitaxial GaAs.- 3.5. Barrier Height Lowering.- 3.6. Fabrication.- 4. Microwave Performance.- 4.1. Mixer Diodes.- 4.2. Detector Diodes.- 5. RF Pulse and CW Burnout.- 5.1. Introduction.- 5.2. Factors Affecting RF Burnout.- 5.3. Experimental Results.- 5.4. Physical Analysis of RF Pulsed Silicon Schottky Barrier Failed Diodes.- 5.5. Physical Analysis of RF Pulsed Millimeter GaAs Schottky Barrier Failed Diodes.- 5.6. Electrostatic Failure of Silicon Schottky Barrier Diodes.- 6. Conclusions.- References.- 7. Metal-Semiconductor Field Effect Transistors.- 1. Introduction.- 2. Small-Signal FET Theory.- 3. Design Parameters of a Low-Noise Device.- 4. Practical Small-Signal FET Fabrication Techniques.- 4.1. Material Growth Techniques.- 4.2. FET Fabrication Technology.- 5. GaAs Power Field Effect Transistors.- 5.1. Principle of Power FET Operation.- 5.2. Thermal Impedance.- 5.3. Power FET Technology.- 6. Conclusions.- References.- 8. Schottky Barrier Gate Charge-Coupled Devices.- 1. Introduction.- 2. Schottky Gate CCDs.- 3. Potential-Charge Relationships.- 3.1. Surface Channel CCD.- 3.2. Bulk Channel CCD.- 3.3. Schottky Gate CCD.- 4. Charge Storage Capacity.- 4.1. Surface Channel CCD.- 4.2. Bulk Channel CCD.- 4.3. Schottky Gate CCD.- 5. Charge Transfer.- 5.1. Charge Transfer Efficiency.- 5.2. Charge Transfer Mechanisms.- 5.2.1. Surface Channel CCD.- 5.2.2. Bulk Channel CCD.- 5.2.3. Schottky Gate CCD.- 6. Input-Output Circuits.- 7. Schottky Gate Heterojunction CCDs.- 8. Experimental Results.- 8.1. High-Frequency Devices.- 8.2. Heterojunction Devices.- 9. Applications.- References.- 9. Schottky Barriers on Amorphous Si and their Applications.- 1. Introduction.- 2. Properties of Amorphous Si.- 2.1. Deposition Methods.- 2.2. Structural Properties.- 2.3. Electronic Properties.- 2.4. Surfaces.- 3. The Schottky Barrier on ?-Si:H.- 3.1. Current-Voltage Measurements.- 3.2. Capacitance Measurements.- 3.3 Internal Photoemission.- 4. Interface Kinetics and Its Effect on the Schottky Barrier.- 5. Applications.- 5.1. Drift Mobility.- 5.2. Deep Level Transient Spectroscopy.- 5.3. Solar Cells.- 5.4. Thin Film Transistors.- 6. Concluding Remarks.- References.

Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules

Abstract: In this study, the authors report characteristic of indium gallium zinc oxides (GIZOs) which is strongly associated with the film surface. In ambient air, turn-on voltage of GIZO thin film transistors is approximately −7V. However, at the pressure of 8×10−6Torr, the turn-on voltage dramatically shifts to nearly −47V of the negative gate bias direction. When the oxygen is introduced in the chamber, the turn-on voltage returns to the normal value, that of air. It is believed that the adsorbed oxygen forms depletion layer below the surface, resulting in Von shifts. The carrier concentration of the channel varies from 1×1019to1×1020cm−3 due to oxygen adsorption.