Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: In this article, surface photovoltages in Si wafers excited with a chopped 559 nm-wavelength photon beam are analyzed using a new half-sided junction model, where the wafer surface with the depletion layer is considered to be one half of the p-n junction.
Abstract: Surface photovoltages in Si wafers excited with a chopped 559 nm-wavelength photon beam are analysed using a new half-sided junction model. In this model, the wafer surface with the depletion layer is considered to be one half of the p-n junction. Chopping frequency ranges from 2 Hz through 20 kHz. Four 76 mm-diameter p-type Si wafers having resistivities of 260, 92, 17 and 1.0 mΩ m are used after forming 360 nm-thick wet-oxide layer on their front surfaces. In these wafers, photovoltage increases with resistivity. In three high-resistivity wafers with strongly-inverted surfaces, the inversion capacitances and conductances limit the photovoltages at low frequencies. The obtained inversion time-constant is 7 s for the 17 mΩ m wafer.
94 citations
TL;DR: In this article, a two-dimensional mathematical model is developed to predict the internal behavior of power transistors operating under steady-state conditions, which includes the internal self-heating effects in the transistors and is applicable to predict transistor behavior under high current and high-voltage operating conditions.
Abstract: A two-dimensional mathematical model is developed to predict the internal behavior of power transistors operating under steady-state conditions. This model includes the internal self-heating effects in power transistors and is applicable to predict the transistor behavior under high-current and high-voltage operating conditions. The complete set of partial differential equations governing the bipolar semiconductor device behavior under nonisothermal conditions is solved by numerical techniques without assuming internal junctions and other conventional approximations. Input parameters for this model are the dimension of the device, doping profile, mobility expressions, generation-recombination model, and the boundary conditions for external contacts. Computer results of the analysis of a typical power transistor design are presented for specified operating conditions. The current density, electrostatic potential, carrier charge density, and temperature distribution plots within the transistor structure illustrate the combined effect of the electrothermal interaction, base conductivity modulation, current crowding, base pushout, space charge layer widening, and current spreading phenomena in power transistors.
94 citations
TL;DR: In this article, the effect of surface layers, depletion layers, ion induced damage, and ion channeling on the measured charge pulse height is also considered, and this approach is shown how this approach can be used to simulate the charge pulse reduction due to ion-induced damage.
Abstract: The ion beam induced charge technique can image the depletion regions of microelectronic devices through their thick metallization and passivation layers, and buried dislocation networks in semiconductor material by measuring the number of charge carriers created by a focused MeV light ion beam scanning over the sample surface. In this paper it is shown how the charge pulse height can be calculated in terms of the ion type and energy, and the minority carrier diffusion length. The effect of surface layers, depletion layers, ion induced damage, and ion channeling on the measured charge pulse height are also considered. It is shown how this approach can be used to simulate the charge pulse height reduction due to ion induced damage.
94 citations
TL;DR: In this paper, the differential capacity of a semiconductor electrode with multiple doping states has been investigated through model calculations and the charge of the deep donors is treated as a potential-dependent function.
93 citations
TL;DR: In this article, the diffusion and thermionic emission theories of conduction in Schottky diodes are compared in terms of the behaviour of the quasi-Fermi levels for electrons.
Abstract: The diffusion and thermionic emission theories of conduction in Schottky diodes are compared in terms of the behaviour of the quasi-Fermi levels for electrons. It is shown by an analysis of published experimental data that, for medium- and high-mobility semiconductors, the quasi-Fermi level is essentially flat throughout the depletion region under forward bias, in accordance with the thermionic emission theory. Under reverse bias the electron quasi-Fermi level is flat through most of the depletion region but rises as it approaches the metal, in agreement with the theoretical calculations of Crowell and Beguwala. The hole quasi-Fermi level remains horizontal through the depletion region at a value coincident with the Fermi level in the metal.
93 citations