Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.

p‐i‐n Heterojunction Solar Cells with a Colloidal Quantum‐Dot Absorber Layer

Abstract: A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

Schottky barrier photodiodes with antireflection coating

Abstract: Schottky barrier diodes can be used for fast and efficient photodetectors if the incident light is coupled into the depletion layer of the diode and if electron-hole pairs are created by the internal photoelectric effect in the depletion layer Fast response of the diode is achieved by designing a Schottky barrier with a small RC product High quantum efficiency is obtained by coupling the light through a thin metal layer into the depletion region of the diode and by using an antireflection coating on the metal layer for matching the incident light beam Schottky barrier photodiodes have been made with thin semitransparent gold layers on n-type epitaxial silicon and with zinc sulfide as an antireflection coating A net quantum efficiency of 70 percent has been achieved at the He-Ne laser wavelength of 6328 A The pulse response of packaged diodes with 05-nanosecond wide pulses shows a symmetrical pulse shape with only small distortion due to carrier diffusion and reactance in the completed package The diode structure is suitable for detector arrays It is also useful for optical time domain reflectometry The technique of coupling light through metal layers can be extended to other optical devices which require efficient transfer of radiation into a semiconductor through conducting electrodes

Study of the charge collection efficiency of CdZnTe radiation detectors

Abstract: The charge collection efficiency of CdZnTe radiation detectors with two different configurations: aSchottky diode detector and aresistive detector are compared. The average charge collection efficiencies for three different directions of irradiation (negative electrode, positive electrode and perpendicular to the electric field) are calculated. The mobility-lifetime product of the CdZnTe substrates is evaluated from the dependence of the measured spectra upon detector bias voltage. The measurement of the average charge collection efficiency is based on monitoring the shift of the peak channel with bias voltage in an experimental setup which is well calibrated. Two types of radiation are used:gamma photons from several radioactive sources andalpha particles from an241Am source. The models for the evaluation of mobility-lifetime product from the measured data for the two types of detector configurations as well as for the two types of radiation sources, are compared and discussed. The CdZnTe (Zn = 10%) substrates under study are obtained commercially and are grown by the high pressure Bridgeman method. The mobility-lifetime products and specific resistivity of the two types of detectors are evaluated and compared. A lower resistivity material has a narrower depletion region and behaves like a thinner detector thus exhibiting better collection efficiencies. Therefore, medium resistivity material which is completely inadequate for resistive detectors can still yield high performance Schottky detectors. The preferred direction of irradiation, i.e. from the negative electrode, is possible only in the case of n-type material which is reverse biased by negative voltages applied to the Schottky gate. The mobility-lifetime products that are derived on both the resistive detector (with specific resistivity of ≈1.1010 ω.cm) and the Schottky diode (with specific resistivity of ≈1.106 Ω.cm) are μnτn ≈-4.10−4 cm2V−1 and μpτp≅ 8.10−5 cm2V−1.

SOI-type semiconductor device with suppressed spread of depletion region

Abstract: In a semiconductor device including a semiconductor substrate (1, 1'), an insulating layer (2) formed on the semiconductor substrate and a semiconductor layer (3) formed on the insulating layer, the impurity concentration of at least one part of the semiconductor substrate in the proximity of the insulating layer is rich, i.e., higher than that of the other part of the semiconductor substrate.

High voltage termination with buried field-shaping region

Abstract: A semiconductor device structure and method are presented for increasing a breakdown voltage of a junction between a substrate of first conductivity type and a device region. The structure includes a region of second conductivity type in the substrate completely buried in the substrate below and separated from the device region. The region of second conductivity type is located a predetermined distance away from the device region. The distance is sufficient to permit a depletion region to form between the region of second conductivity type and the device region, when a first voltage is applied between the device region and the substrate. The distance also is determined to produce a radius of curvature of the depletion region, when a second voltage that is larger than the first voltage is applied between the device region and the substrate, that is larger than a radius of curvature of the depletion region about the device region that would be formed if the region of second conductivity type were not present. Traditional field shaping regions spaced from the device region at a surface of the substrate and spaced from the region of second conductivity type may be used in conjunction with the buried ring, if desired.