Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: In this article, the artificial perovskite superlattices composed of LaMnO3 and SmNO3 have been investigated to elucidate the interface electronic phases created by adjoining the two Mott insulators.
Abstract: The artificial perovskite superlattices composed of LaMnO3 and SrMnO3 have been investigated to elucidate the interface electronic phases created by adjoining the two Mott insulators. Charge transfer at the interface due to chemical potential difference, as observed in p-n junctions of semiconductors, can realize metallic ferromagnet instead of resulting in insulating depletion layer. The interface electronic phases strongly depend on the orbital states at the interface which can be tuned by epitaxial strain.
71 citations
TL;DR: In this paper, a rigorous analytical solution for the formation of the space charge layer is presented, where the authors assume that the formation is caused by a thin amorphous phase formed by a defect reaction at the interface between the second phase and the matrix.
71 citations
TL;DR: In this paper, the steady-state photoconductance of an oxidized low-lifetime monocrystalline Si wafer with an inversion layer at its surfaces was investigated.
Abstract: We investigate the steady-state photoconductance of an oxidized low-lifetime monocrystalline Si wafer with an inversion layer at its surfaces. Photogenerated electrons and holes reduce the band bending and decrease the width of the carrier depleted space-charge region. Mobile charge carriers are stored on both sides of the space-charge region and dominate the photoconductivity at a low illumination intensity. This charge storage effect disappears under accumulation. We present an analytic model for the experimental observations. It is necessary to account for the charge storage effect when deducing low (<10 μs) minority carrier lifetimes on surface-inverted solar Si wafers from one-sun steady-state photoconductance measurements.
71 citations
TL;DR: In this paper, a simple 1-dimensional analytical solution method for analyzing and determining the breakdown properties of reduced surface field (RESURF) lateral devices is presented, which demonstrates quantitatively and qualitatively the reshaping and reduction of the electric field and its dependence on the device/process key parameters.
Abstract: A simple one-dimensional (1-D) analytical solution method for analyzing and determining the breakdown properties of reduced surface field (RESURF) lateral devices is presented. The solution demonstrates quantitatively and qualitatively the reshaping and reduction of the electric field and its dependence on the device/process key parameters. The solution is based on a simple and physical charge-sharing approach that takes into account the modulation of the lateral depletion layer spreading caused by the vertical depletion extension, and therefore transforms the inherent two-dimensional effects into a simple 1-D equivalent. It also provides a reasonable insight on the breakdown voltage sensitivity of lateral RESURF devices to key device/process parameters that other researchers failed to provide. Using the technique, device designers can set and choose the optimal processing window of the device's critical layers to yield high breakdown voltages. The results obtained using the proposed solution method agree well with the experimental and simulation results.
71 citations
TL;DR: In this article, a simple physical model is presented which gives the capacitancevoltage characteristics of a metaloxide-semiconductor structure at high measurement frequencies in excellent agreement with the experimental observations, based on the concept that at high frequencies the minority carriers within the inversion region act as fixed charges and so do not contribute to the ac variation of charge within the semiconductor.
Abstract: A simple physical model is presented which gives the capacitance‐voltage characteristics of a metal‐oxide‐semiconductor structure at high measurement frequencies in excellent agreement with the experimental observations. The model is based on the concept that at high frequencies the minority carriers within the inversion region act as `fixed charges' and so do not contribute to the ac variation of charge within the semiconductor. However, their presence determines the size of the depletion region under the given dc bias and hence the space‐charge capacitance.
71 citations