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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


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Book ChapterDOI
TL;DR: In this paper, a model of the charge transfer processes at semiconductor electrodes is presented, and the kinetics of various reactions in the dark and under illumination are discussed in detail.
Abstract: In contrast to reactions at metal electrodes, charge transfer processes at semiconductor electrodes can be controlled by light excitation if minority carriers are involved. Since electron and hole transfer always occur via one of the energy bands, valuable information on the energy parameters determining the reaction rates can be obtained. In the present paper, models of the charge transfer processes at semiconductor electrodes are presented, and the kinetics of various reactions in the dark and under illumination are discussed in detail. During the last decade it has become very popular to investigate photoinduced charge transfer reactions at small semiconductor particles, i.e. at micoroheterogeneous systems, because of the large surface area. Here, various fundamental processes in suspensions or colloidal solutions are compared with corresponding reactions at extended electrodes. Finally, several applications of photoinduced reactions at semiconductor electrodes and particles are briefly described.

69 citations

Journal ArticleDOI
TL;DR: In this paper, the barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from currentvoltage measurements.
Abstract: Barrier height values of Ni contacts to Mg-doped p-type GaN (p-GaN) were obtained from current–voltage measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission. It also resulted in an increase in current flow under forward bias condition, which was not analyzed using the thermionic emission model. Further, the calculated barrier height value of Ni contacts to p-GaN using the thermionic field emission model is in good agreement with the value of 1.9eV obtained from x-ray photoelectron spectroscopy measurements.

69 citations

Patent
Lawrence C. Gunn1, Roger Koumans1, Bing Li1, Guo Liang Li1, Thierry Pinguet1 
18 May 2005
TL;DR: In this paper, a reverse biased lateral PN diode (PN) is constructed in a silicon rib optical waveguide and the depletion region at the PN junction overlaps with the center of a guided optical mode propagating through the waveguide.
Abstract: High speed optical modulators (100) can be made of a reverse biased lateral PN diode (105) formed in a silicon rib optical waveguide (112) disposed on a SOI or other silicon based substrate (100). A PN junction is formed at the boundary of the P and N doped regions (120, 130) The depletion region at the PN junction (106) overlaps with the center of a guided optical mode propagating through the waveguide (110). Electrically modulating a reverse biased lateral PN diode (105) causes a phase shift in an optical wave propagating through the waveguide (110). Prior art forward biased PN and PIN diode modulators have been relatively low speed devices.

68 citations

Journal ArticleDOI
TL;DR: In this paper, the dark electrical properties of metallophthalocyanine-metal contacts are studied in an extended frequency range (10−3−105 Hz) and it is shown that the standard Schottky model cannot be applied to metallo-organic semiconductors.
Abstract: The dark electrical properties of metallophthalocyanine‐metal contacts are studied in an extended frequency range (10−3–105 Hz). The measurements show that the standard Schottky model cannot be applied to metallo‐organic semiconductors. Three different contributions to the admittance may be distinguished. Over the very first few angstroms of the semiconductor extends a surface‐charge layer associated with a high capacitive term. The surface‐charge capacitance is only slightly dependent upon superimposed dc voltages. The so‐called space‐charge region extends below the surface‐charge layer over approximately 2000–4000 A. The properties of this space‐charge region are, however, dramatically different from those found in monocrystalline inorganic semiconductors. The corresponding capacity is almost independent of any dc superimposed voltage. At the same time, the resistance of the space‐charge region is highly dependent on externally applied dc voltages. The I‐V relationship seems to indicate a Frenkel–Poole ...

68 citations

Journal ArticleDOI
TL;DR: In this article, Coulomb scattering is shown to be responsible for the deviation of electron mobility curves when plotted versus the effective field, and it is shown that electron mobility must be a function of the inversion and the depletion charges rather than a simple function of effective field.
Abstract: The universal behavior of electron mobility when plotted versus the effective field is physically studied. Due to charged centers in the silicon bulk, the oxide, and the interface, Coulomb scattering is shown to be responsible for the deviation of mobility curves. Silicon bulk-impurities have a double effect: (a) Coulomb scattering due to the charge of these impurities themselves, and (b) reduction of screening caused by the loss of inversion charge when the depletion charge is increased. The electric-field region in which mobility curves behave universally regardless of bulk-impurity concentration, substrate bias, or interface charge has been determined for state-of-the-art MOSFETs. Finally, this study shows that electron mobility must be a function of the inversion and the depletion charges rather than a simple function of the effective field. >

68 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239