Topic
Depletion region
About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.
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TL;DR: The anomalous leakage current I L in LPCVD polysilicon MOSFETs is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed.
Abstract: The anomalous leakage current I L in LPCVD polysilicon MOSFET's is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic model that describes the strong dependences of I L on the gate and drain voltages is developed. The model predictions are consistent with measured current-voltage characteristics. Physical insight afforded by the model implies device design modifications to control and reduce I L , and indicates when the back-surface leakage component is significant.
275 citations
TL;DR: The selective detection of two different gases, NO(2) and C( 2)H(5)OH, has been achieved using a p-type Co(3)O(4)-decorated n-type ZnO nanowire (NW) network sensor.
272 citations
TL;DR: The distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).
Abstract: van der Waals (vdW) heterostructures based on atomically thin 2D materials have led to a new era in next-generation optoelectronics due to their tailored energy band alignments and ultrathin morphological features, especially in photodetectors. However, these photodetectors often show an inevitable compromise between photodetectivity and photoresponsivity with one high and the other low. Herein, a highly sensitive WSe2 /SnS2 photodiode is constructed on BN thin film by exfoliating each material and manually stacking them. The WSe2 /SnS2 vdW heterostructure shows ultralow dark currents resulting from the depletion region at the junction and high direct tunneling current when illuminated, which is confirmed by the energy band structures and electrical characteristics fitted with direct tunneling. Thus, the distinctive WSe2 /SnS2 vdW heterostructure exhibits both ultrahigh photodetectivity of 1.29 × 1013 Jones (Iph /Idark ratio of ≈106 ) and photoresponsivity of 244 A W-1 at a reverse bias under the illumination of 550 nm light (3.77 mW cm-2 ).
268 citations
TL;DR: In contrast to metals, the average free energy of electrons can be changed in semiconductors to a great extent by illumination Especially the concentration of minority electronic carriers can differ by orders of magnitude from the equilibrium value.
Abstract: In contrast to metals, the average free energy of electrons can be changed in semiconductors to a great extent by illumination Especially the concentration of minority electronic carriers can differ by orders of magnitude from the equilibrium value This has two major effects on electrode processes: (a) change of charge distribution and potential drops in the space charge layer; and (b) variation of the rate of electrode reaction in which minority carriers are involved Some examples are given for those effects at various semiconductors
267 citations
01 Nov 1952
TL;DR: In this article, the dependence of collector barrier thickness on collector voltage was analyzed and two new elements in the theoretical small-signal equivalent circuit were shown to modify the elements of the conventional equivalent tee network.
Abstract: Some effects of the dependence of collector barrier (space-charge layer) thickness on collector voltage are analyzed. Transistor base thickness is shown to decrease as collector voltage is increased, resulting in an increase of the current-gain factor (?) and a decrease in the emitter potential required to maintain any fixed emitter current. These effects are shown to lead to two new elements in the theoretical small-signal equivalent circuit. One, the collector conductance (gc?), is proportional to emitter current and varies inversely with collector voltage. This term is the dominant component of collector conductance in high-quality junction transistors. The other element, the voltage feedback factor (?ec), is independent of emitter current, but varies inversely with collector voltage. The latter element is shown to modify the elements of the conventional equivalent tee network.
257 citations