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Depletion region

About: Depletion region is a research topic. Over the lifetime, 9393 publications have been published within this topic receiving 145633 citations.


Papers
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Journal ArticleDOI
18 May 2012-ACS Nano
TL;DR: It is found that the surface depletion induced quantum confinement in CdS nanobelts beyond the quantum confinement regime, where the thickness is much larger than the bulk exciton Bohr radius, leads to weaker confinement due to the decrease of carrier concentration.
Abstract: We investigate the surface depletion induced quantum confinement in CdS nanobelts beyond the quantum confinement regime, where the thickness is much larger than the bulk exciton Bohr radius. From room temperature to 77 K, the emission energy of free exciton A scales linearly versus 1/L2 when the thickness L is less than 100 nm, while a deviation occurs for those belts thicker than 100 nm due to the reabsorption effect. The 1/L2 dependence can be explained by the surface depletion induced quantum confinement, which modifies the confinement potential leading to a quasi-square potential well smaller than the geometric thickness of nanobelts, giving rise to the confinement effect to exciton emission beyond the quantum confinement regime. The surface depletion is sensitive to carrier concentration and surface states. As the temperature decreases, the decrease of the electrostatic potential drop in the surface depletion region leads to a weaker confinement due to the decrease of carrier concentration. With a la...

62 citations

Journal ArticleDOI
TL;DR: A detailed analytical calculation of the photoelectric quantum yield in Schottky diodes is presented in this article, where the transport of carriers in the surface space charge region is treated explicitly, taking account of photogeneration, diffusion and drift in the nonuniform electric field.
Abstract: A detailed analytical calculation of the photoelectric quantum yield in Schottky diodes is presented. The transport of carriers in the surface space charge region is treated explicitly, taking account of photogeneration, diffusion and drift in the non-uniform electric field. Boundary conditions at the interface are expressed in terms of surface recombination velocity and emission velocity of excess carriers into the metal. It is shown that the metal-semiconductor interface strongly affects the collection efficiency of short wavelength generated electron-hole pairs. This effect basically originates in the emission flux of majority carriers into the metal. Current, charge carriers distributions and quantum yields are computed using the data of AuCdTe Schottky barriers.

62 citations

Patent
Adarsh Sandhu1
18 Jul 1995
TL;DR: In this paper, a thin film magnetic head includes a layered semiconductor body formed of a quantum well layer sandwiched by first and second barrier layers, wherein at least one of the barrier layers includes a delta-doped layer that shields the well layer from a surface depletion region extending from the surface of barrier layer.
Abstract: A thin film magnetic head includes a layered semiconductor body formed of a quantum well layer sandwiched by first and second barrier layers, wherein at least one of the first and second barrier layers includes therein a delta-doped layer that shields the quantum well layer from a surface depletion region extending from the surface of the barrier layer.

62 citations

Journal ArticleDOI
TL;DR: In this article, the high speed photoresponse of a GaAs-MESFET was demonstrated using a light pulse of about 100 ps duration with a 2 GHz repetition rate generated by a GaAlAs-DH laser diode.
Abstract: The high speed photoresponse of a GaAs-MESFET has been demonstrated using a light pulse of about 100 ps duration with a 2 GHz repetition rate generated by a GaAlAs-DH laser diode. The measured current pulse heights through the gate and through the drain as a function of the gate bias voltage confirmed a theory that the photoresponse in MESFETs is caused by the sweepout effect of photogenerated carriers in the depletion layer extending from the gate to the drain, just as in photodiodes with subsequent ordinal FET amplification.

62 citations

Journal ArticleDOI
TL;DR: Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to -15 V without any influence on the forward current-voltage curve are realized and are confirmed by a minimal Hamiltonian model approach.
Abstract: Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

62 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202326
202266
2021151
2020198
2019229
2018239