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Diborane

About: Diborane is a research topic. Over the lifetime, 1866 publications have been published within this topic receiving 30071 citations. The topic is also known as: Boroethane & Boron hydride.


Papers
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Journal ArticleDOI
TL;DR: NMR studies in conjunction with DFT/GIAO chemical shift calculations indicate that both polyaminoborane and the diammoniate of diborane, [(NH3)2BH2+]BH4-, are initial products in the reactions.
Abstract: Ionic liquids are shown to provide advantageous media for amineborane-based chemical hydrogen storage systems. Both the extent and rate of hydrogen release from ammonia borane dehydrogenation are significantly increased at 85, 90, and 95 degrees C when the reactions are carried out in 1-butyl-3-methylimidazolium chloride compared to analogous solid-state reactions. NMR studies in conjunction with DFT/GIAO chemical shift calculations indicate that both polyaminoborane and the diammoniate of diborane, [(NH3)2BH2+]BH4-, are initial products in the reactions.

580 citations

Journal ArticleDOI
TL;DR: The thermal decomposition of borazane BH 3 NH 3 has been studied by differential scanning calorimetry (DSC) and thermogravimetry combined with the FTIR spectroscopic and mass spectrometric analysis of the gas phase as discussed by the authors.

411 citations

Journal ArticleDOI
TL;DR: In this article, it was observed that diborane, a hydride, reduces aldehydes and ketones with exceptional ease even at 0°, and since then various reagents have evolved for the convenient reduction of typical organic functional groups.

373 citations

Journal ArticleDOI
TL;DR: A mechanistic model for the induction, nucleation and growth for AB decomposition leading to formation of hydrogen is proposed, which yields a mobile phase of AB caused by disruption of the dihydrogen bonds and nucleation that yields reactive DADB from the mobile AB.
Abstract: The mechanism of hydrogen release from solid state ammonia borane (AB) has been investigated via in situ solid state 11B and 11B{1H} MAS-NMR techniques in external fields of 7.1 T and 18.8 T at a decomposition temperature of 88 °C, well below the reported melting point. The decomposition of AB is well described by an induction, nucleation and growth mechanistic pathway. During the induction period, little hydrogen is released from AB; however, a new species identified as a mobile phase of AB is observed in the 11B NMR spectra. Subsequent to induction, at reaction times when hydrogen is initially being released, three additional species are observed: the diammoniate of diborane (DADB), [(NH3)2BH2]+[BH4]−, and two BH2N2 species believed to be the linear (NH3BH2NH2BH3) and cyclic dimer (NH2BH2)2 of aminoborane. At longer reaction times the sharper features are replaced by broad, structureless peaks of a complex polymeric aminoborane (PAB) containing both BH2N2 and BHN3 species. The following mechanistic model for the induction, nucleation and growth for AB decomposition leading to formation of hydrogen is proposed: (i) an induction period that yields a mobile phase of AB caused by disruption of the dihydrogen bonds; (ii) nucleation that yields reactive DADB from the mobile AB; and (iii) growth that includes a bimolecular reaction between DADB and AB to release the stored hydrogen.

341 citations

Journal ArticleDOI
21 Jun 2012-ACS Nano
TL;DR: The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure, and insights into the growth mechanism are described, thus forming the basis of future growth ofh-BN by atomic layer epitaxy.
Abstract: Atomically smooth hexagonal boron nitride (h-BN) layers have very useful properties and thus potential applications for protective coatings, deep ultraviolet (DUV) emitters, and as a dielectric for nanoelectronics devices. In this paper, we report on the growth of h-BN by a low-pressure chemical vapor deposition (LPCVD) process using diborane and ammonia as the gas precursors. The use of LPCVD allows synthesis of h-BN with a controlled number of layers defined by the growth conditions, temperature, time, and gas partial pressure. Furthermore, few-layer h-BN was also grown by a sequential growth method, and insights into the growth mechanism are described, thus forming the basis of future growth of h-BN by atomic layer epitaxy.

295 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202315
202233
202121
202022
201925
201829