Showing papers on "Dielectric published in 1995"

Dielectric Materials and Applications

Abstract: Theory dielectric measuring techniques dielectric materials and their applications - dielectric materials insulation strengths of high pressure gases and of vacuum liquid dielectrics plastics as dielectrics ceramics dielectrics in equipment dielectrics in power and distribution equipment dielectrics in electronic equipment dielectrics in capacitors rubber and plastics in cables problems of the cable engineer dielectric materials as devices rectifiers piezoelectric transducers and resonators magnetic and dielectric amplifiers memory devices dielectric requirements of the armed forces tables of dielectric materials

Solitons in optical communications

Abstract: Preface Introduction 1. Electric properties of the dielectric fiber 2. Derivation of wave packet equation and introduction to soliton transmission systems 3. Inverse scattering transform and N-Soliton solutions 4. Perturbation methods 5. Effects on higher order terms 6. Reshaping of solitons and concept of guiding center (Average) solitons 7. Soliton transmission control 8. Interaction among solitons in same channel 9. Interaction among solitons in different channels 10. Femto second solitons 11. Soliton transmission experiments 12. Other applications of optical solitons 13. Spatial solitons, stability and chaos 14. Modulational instability 15. Dark solitons General references

Incorporation of solvent effects into density functional calculations of molecular energies and geometries

Abstract: In this paper, we present the implementation of the ‘‘conductorlike screening model’’ (COSMO) into the density functional program DMol. The electronic structure and geometry of the solute are described by a density functional method (DFT). The solute is placed into a cavity which has the shape of the solute molecule. Outside of the cavity, the solvent is represented by a homogeneous dielectric medium. The electrostatic interaction between solute and solvent is modeled through cavity surface charges induced by the solvent. The COSMO theory, based on the screening in conductors, allows for the direct determination of the surface charges within the SCF procedure using only the electrostatic potentials. This represents the major computational advantage over many of other reaction field methods. Since the DMol/COSMO energy is fully variational, accurate gradients with respect to the solute coordinates can be calculated for the first time, without any restriction on the shape of the cavity. The solvation energies and optimized molecular structures are calculated for several polar solutes. In addition, the trends in basicity of amines and the relative stabilities of molecular conformers are studied. Our results suggest that for neutral solutes, agreement between calculated and experimental solvation energies of better than about 2 kcal/mol can be achieved.

Dielectric properties of soils in the 0.3-1.3-GHz range

Abstract: In 1985, the authors reported the development of a semiempirical dielectric model for soils, covering the frequency range between 1.4 and 18 GHz. The model provides expressions for the real and imaginary parts of the relative dielectric constant of a soil medium in terms of the soil's textural composition (sand, silt, and clay fractions), the bulk density and volumetric moisture content of the soil, and the dielectric constant of water at the specified microwave frequency and physical temperature. This communication provides similar expressions for the 0.3-1.3-GHz range. Upon comparing experimental results measured in this study with predictions based on the semiempirical model, it was found that the model underpredicts the real part of the dielectric constant for high-moisture cases and underestimates the imaginary part for all soils and moisture conditions. A small linear adjustment has been introduced to correct the expression for the real part and a new equation was generated for the effective conductivity to correct the expression for the imaginary part. In addition, dielectric measurements were made to evaluate the dependence of the dielectric constant on clay type. The results show significant variations for the real part and large variations for the imaginary part among soils with the same clay fractions but with clays of different specific surface areas. >

Ga2O3 films for electronic and optoelectronic applications

Abstract: Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to ...

Porous dielectric material with improved pore surface properties for electronics applications

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for example, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

Franz–Keldysh oscillations in modulation spectroscopy

Abstract: In the presence of an electric field, the dielectric constant of a semiconductor exhibits Franz–Keldysh oscillations (FKO), which can be detected by modulated reflectance. Although it could be a powerful and simple method to study the electric fields/charge distributions in various semiconductor structures, in the past it has proven to be more complex. This is due to nonuniform fields and impurity induced broadening, which reduce the number of detectible Franz–Keldysh oscillations, and introduce uncertainties into the measurement. In 1989, a new structure, surface–undoped–doped (s‐i‐n+/s‐i‐p+) was developed, which allows the observation of a large number of FKOs and, hence, permitting accurate determination of electric fields. We present a review of the work on measuring electric fields in semiconductors with a particular emphasis on microstructures using the specialized layer sequence. We first discuss the general theory of modulation techniques dwelling on the approximations and their relevance. The cas...

Order- N spectral method for electromagnetic waves

Abstract: We show that the eigenmodes for electromagnetic waves in an inhomogeneous dielectric medium can be obtained with an algorithm that scales linearly with the size of the system. The method employs discretization of the Maxwell equations in both the spatial and the time domain and the integration of the Maxwell equations in the time domain. The spectral intensity can then be obtained by a Fourier transform. We applied the method to a few problems of current interest, including the photonic band structure of a periodic dielectric structure, the effective dielectric constants of some three-dimensional and two-dimensional systems, and the defect states of a periodic dielectric structure with structural defects.

Dielectric relaxation spectroscopy in poly(hydroxyethyl acrylates)/water hydrogels

Abstract: The electrical and dielectric properties of poly(hydroxyethyl acrylate), PHEA, hydrogels were studied by means of dielectric relaxation spectroscopy in wide ranges of frequencies (5–2 × 109 Hz), temperatures (173–363 K) and water contents (0.065–0.46, g of water per gram of dry material). The secondary dipolar mechanisms (γ and βsw) and the dc conductivity mechanism were studied in detail by analyzing the dielectric susceptibility data within the complex permittivity formalism, the modulus formalism, and the complex impedance formalism. For both mechanisms molecular mobility was found to increase with increasing temperature or increasing water content (T-f-h superposition principle). The energy parameters and the shape parameters of the response were determined for both mechanisms at several water contents and temperatures. The temperature dependence of dc conductivity was found to change from Vogel-Tamman-Fulcher (VTF) type to Arrhenius type at water contents of ca. 0.30. At water contents lower than about 0.30 the hydrogels are homogeneous whereas at higher water contents a separate water phase appears. In terms of the strong/fragile classification scheme our results suggest that the PHEA hydrogels are fragile systems. ©1995 John Wiley & Sons, Inc.

Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra‐large‐scale integrated dynamic random access memory application

Abstract: (Ba,Sr)TiO3 (BST) thin films with thicknesses ranging from 15 to 50 nm are prepared by a rf magnetron sputtering on Pt/SiO2/Si substrates. The dielectric constants of BST thin films increase with increasing deposition temperature and thicknesses. The leakage current increases with increasing deposition temperature and this prevents the deposition temperature of the 20 nm thick BST thin film from being increased to a value more than 640 °C. The leakage current is also critically dependent upon the postannealing temperature and atmosphere after the top electrode fabrication. The dielectric constant increases with increasing postannealing temperature which further reduces the SiO2 equivalent thicknesses of the BST thin films. A 20 nm thick BST thin film deposited at 640 °C and postannealed at 750 °C under N2 atmosphere for 30 min, shows a SiO2 equivalent thickness of 0.24 nm, dielectric dissipation factor less than 1%, and leakage current of about 40 nA/cm2 at ∓1.5 V.

The Influence of the Microstructure on the Properties of Ferroelectric Ceramics

Abstract: Conventional ferroelectric perovskite type ceramics have dielectric, piezoelectric and elastic properties which depend on grain size and on domain configuration. Very fine grained ceramic is not splitted in domains. This causes strong elastic stress fields in the grains which counteract ferroelectricity. Tetragonal fine grained ceramic has a simple laminar domain structure and high elastic stress fields inside the grain and at the grain boundaries. These stress fields cause very high permittivity. In coarse grained ceramics the stress fields inside the grain are eliminated by a three-dimensional network of domains. In fine and in coarse grained ceramics the domain walls contribute considerably to the dielectric, piezoelectric and elastic constants at frequencies below a relaxation frecuency which is between 200 and 1000 MHz. At low temperatures, however, the domain wall contributions freeze in. Acceptor doping lowers the domain wall contributions and shifts the relaxation frequency to higher values. The properties of the conventional ceramics will be compared wiht properties of thin firms and with properties of relaxor ceramics.

Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties

Abstract: The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low‐field dielectric permittivity (er) measurements. It was observed that a low er layer existed at the Pt/PZT interface but not at the RuO2/PZT and Pt/SrBi2Ta2O9 interfaces. In the case of Pt/PZT, the capacitance of this interfacial layer decreases with increasing fatigue while the er of the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness and/or decreases interfacial layer permittivity, but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 and Pt/S...

Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters

Abstract: The switching of the sandwich structure ''ferroelectric+thin dielectric layer'' is theoretically studied. The behavior of the remanent polarization, P-r, coercive field, E(c), maximal polarization on the loop, P-s, and the slope of the hysteresis loop at E(c) as a function of both, the relative thickness of the layer (the thickness of the dielectric divided by the thickness of the ferroelectric) and the amplitude of the measuring field, is analyzed. It is shown that the effect of the layer on P-r and the slope at E(c) is qualitatively different from that on E(c) and P-s. As the result of this analysis the set of characteristic features of the sandwich with the variable relative thickness of the dielectric layer have been have formulated. These characteristic features can be used for the identification of the presence of such a dielectric layer using the data on the switching parameters of the system. It is shown that the increase of the coercive field with increasing relative thickness of the dielectric layer, which was considered as an important sign of the presence of the dielectric layer, is not a real property of the sandwich structure but rather an artifact of the approximations which were used in the analysis performed by the previous workers. In fact, E(c) is a decreasing function of the relative thickness of the dielectric layer. (C) 1995 American Institute of Physics.

Scanning polarization force microscopy: A technique for imaging liquids and weakly adsorbed layers

Abstract: The atomic force microscope is used to measure dielectric polarization forces on surfaces induced by a charged tip. On insulators, the major contribution to the surface polarizability at low frequencies is from surface ions. The mobility of these ions depends strongly on the humidity. Using polarization forces we have been able to image liquid films, droplets, and other weakly adsorbed material.

Electromagnetic field quantization in absorbing dielectrics

Abstract: The electromagnetic field is quantized for normal transmission of incident waves through a parallel-sided dielectric slab. The dielectric material is dispersive and it acts as a linear amplifier over limited ranges of the frequency and as a linear attenuator at the remaining frequencies. The field operators derived for the three spatial regions within and on either side of the slab are shown to satisfy the canonical commutation relations. The noise fluxes emitted by the slab are evaluated and shown to satisfy the general requirements for the minimum noise associated with linear amplifiers and attenuators. The behavior of the amplifier gain profile on the approach to the lasing threshold of the slab is determined, but the results are restricted to the below-threshold state of the system. The spectra of the electric-field fluctuations are evaluated for the three spatial regions and for amplifying and attenuating frequencies.

Electrode influence on the charge transport through SrTiO3 thin films

Abstract: The influence of the electrodes on the dielectric behavior and especially on the leakage behavior of SrTiO3 thin films was investigated by impedance analysis. Based on measurements on thin films with different electrode materials the work function of these materials was found to determine the leakage currents. The main conduction mechanism is thermionic emission of electrons from the cathode into the SrTiO3 thin film. The current–voltage characteristics are influenced by the Schottky effect.

Internal and Interfacial Dielectric Properties of Cytochrome c from Molecular Dynamics in Aqueous Solution

Abstract: The dielectric properties of proteins are central to their stability and activity. We use the Frohlich-Kirkwood theory of dielectrics to analyze two 1-ns molecular dynamics simulations of ferro- and ferricytochrome c in spherical droplets of 1400 water molecules. Protein and solvent are idealized as a series of concentric, spherical, dielectric media. Analysis results depend strongly on the treatment of the charged protein side chains at the protein/solvent interface. If charged side chains are viewed as part of the protein medium, then the protein dipole fluctuations are dominated by large, mutually uncorrelated, anisotropic, motions of the charged side chains. It is then incorrect to view the protein region as a single, homogeneous dielectric material. If one does take this view, estimates of the protein "dielectric constant" vary from 16 to 37, depending on the exact choice of model parameters. In contrast, if the charged portions of the charged side chains are viewed as part of the solvent medium, then theory and simulation are consistent: the protein dipole fluctuations excluding charged side chains are roughly those of a homogeneous, isotropic dielectric medium, with a dielectric constant of 4.7 +/- 1.0 (ferro) or 3.4 +/- 1.0 (ferri), in agreement with powder experiments. Statistical uncertainty and sensitivity to model parameters are small. Analysis of the radial dependence of the dipole fluctuations suggests that the inner half of the protein has a somewhat lower dielectric constant of 1.5-2, consistent with its biological function in electron transfer. These results suggest that Poisson-Boltzmann models could treat the protein bulk as a low-dielectric medium and the charged surface groups as part of the solvent region.

Enhancement of the dielectric constant of Ta 2 O 5 through substitution with TiO 2

Abstract: MICROELECTRONICS research is in large part driven by the demand for smaller components with enhanced performance. For capacitive components, which form the basis of many memory devices, the dielectric constant limits the degree of miniaturization—a limit that is now being approached for the materials currently in use. For this reason, exotic compounds with high dielectric constants, such as barium strontium titanate, are being widely investigated1. But such materials invariably incorporate chemical elements foreign to current microelectronics fabrication procedures, and must pass extensive compatibility tests before they can be used commercially. From a compatibility point of view, tantalum oxide, Ta2O5, is considered more promising2-5 (although its dielectric properties are more modest), and it is known to form high-quality thin films in conventional fabrication processes. Here we show that the dielectric constant of Ta2O5 can be increased by nearly a factor of four — from 35 to 126—through the addition of 8% titanium oxide, TiO2. The minimum area of capacitive components prepared from this material should be reduced by the same factor, and as both tantalum and titanium are compatible with fabrication processes currently in use, the material shows great promise for future microelectronics applications.

Optical properties of transparent glass-ceramics in K2ONb2O5TeO2 glasses

Abstract: Transparent glass-ceramics consisting of a cubic crystalline phase with crystallites having diameters between 20 and 40 nm in the composition of 15K2O15Nb2O570TeO2 (mol%) have been fabricated. A phase with cubic structure is formed by post-heat-treatment at around 390°C for 1 h and transforms into a stable phase at temperatures above 450°C. The glass-ceramics consisting of a stable crystalline phase are opaque. The transparency of glass-ceramics is attributed to a small particle size (average radius: 10–20 nm) of the cubic crystalline phase. The optical and dielectric properties for the transparent glass-ceramics obtained by heat-treatment at 425°C for 1 h are: refractive index, n = 2.11 ± 0.02; relative permittivity (1 kHz, 300 K), ϵr = 44 ± 1 and third-order non-linear optical susceptibility, χ(3) = 3.3 × 10−13esu. These values are larger than those for the original base glass, i.e. n = 2.02 ± 0.02, ϵr = 28 ± 1 and χ(3) = 0.9 × 10−13esu. Second-harmonic generation is clearly observed in transparent glass-ceramics. These transparent glass-ceramics have a potential as a new type of non-linear optical material.

Microwave transition using dielectric waveguides

Abstract: A microwave antenna comprises a single moded metal waveguide tapering inwardly to a cutoff dimension near the distal end thereof. The antenna also comprises a first solid dielectric waveguide mounted coaxially within the distal end portion of the metal waveguide and tapering outwardly toward the inwardly tapering portion of the metal waveguide. The first dielectric waveguide extends beyond the distal end of the metal waveguide in the axial direction. The antenna also comprises a second dielectric waveguide surrounding the first dielectric waveguide beyond the distal end of the metal waveguide and having a dielectric constant lower than the dielectric constant of the first dielectric waveguide. A distal end portion of the first dielectric waveguide tapers inwardly toward the axis thereof, to launch signals propagating toward the distal end of the first dielectric waveguide into the second dielectric waveguide.

Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O3

Abstract: We have developed the series of thin-film bismuth layer structured ferroelectric (BLSF) materials such as SrBi2Ta2O9, SrBi2Nb2O9, SrBi4Ti4O15 and their solid solutions using metallo-organic-decomposition (MOD) spin-on coating techniques. We found that SrBi2Ta2O9 is one of the best potential candidate materials for ferroelectric nonvolatile memories. The SrBi2Ta2O9 thin-film capacitor had the remanent polarization (P r+-P r-) of 20 µ C/cm2, coercive field of 35 kV/cm and dielectric constant of 250. SrBi2Ta2O9 thin film on platinum electrode has fatigue-free characteristics for up to 2×1011 cycles without requiring any complicated electrode system such as conductive oxide. Moreover, SrBi2Ta2O9 thin film has many advantages, e.g., high signal/noise ratio of 8 at 1.2 V, low-voltage operation at as low as 1 V, long data-retention, little surface effect, superior imprint properties and low leakage current. We considered that these advantages are due to (1) less space charge and (2) the inherent domain motion.

Screening in Semiconductor Nanocrystallites and Its Consequences for Porous Silicon.

Abstract: Consequences of the modified dielectric properties of semiconductor crystallites are explored. The notion and usefulness of an effective dielectric constant are analyzed using a self-consistent linear screening calculation. The binding energy of hydrogenic impurities is defined and calculated, and it is shown why these are always ionized in porous silicon. Self-energy terms associated with the surface polarization charge are discussed in the context of Coulomb charging effects. Their contribution to exciton binding energies is also determined. Consequences of charging effects on carrier injection in porous silicon are finally considered and shown to be important.

Electric-field-dependent dielectric constant and nonlinear susceptibility in srtio3

Abstract: ${\mathrm{SrTiO}}_{3}$ belongs to the class of incipient ferroelectrics in which an electrically ordered state is suppressed by quantum fluctuations. To investigate the nature of these excitations, we have measured the linear and nonlinear susceptibilities of ${\mathrm{SrTiO}}_{3}$ as a function of temperature T and field E. The application of large fields E counteracts the fluctuations and forces the system into an ordered state. The (E,T) diagram is presented. The field dependence of the dielectric constant can be well described within an Ising model including quantum tunneling. Minima in the third harmonic susceptibility, which is a measure of ferroelectric correlations, are taken as evidence for the onset of coherent tunneling phenomena near T=33 K.

Top-drain trench based resurf DMOS transistor structure

Abstract: A top drain trench based RESURF DMOS (reduced surface field double diffused MOS) transistor structure provides improved RDSon performance by minimizing transistor cell pitch. The transistor includes a gate, a source and drain. The trench may include a nonuniform dielectric lining. A drain drift region partially surrounds the trench. Current flows laterally enabling multiple trench based RESURF DMOS transistors to be formed on a single semiconductor die. The addition of an isolation region to electrically isolate the source from the substrate allows the power transistor to be incorporated into high side driver applications as well as other application mandating electrical isolation between the source and ground.