Showing papers on "Dielectric published in 1998"

Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics

Abstract: Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics are reviewed with the aim of providing an insight into different processes which may affect the behaviour of ferroelectric devices, such as ferroelectric memories and micro-electro-mechanical systems. Taking into consideration recent advances in this field, topics such as polarization switching, polarization fatigue, effects of defects, depletion layers, and depolarization fields on hysteresis loop behaviour, and contributions of domain-wall displacement to dielectric and piezoelectric properties are discussed. An introduction into dielectric, pyroelectric, piezoelectric and elastic properties of ferroelectric materials, symmetry considerations, coupling of electro-mechanical and thermal properties, and definitions of relevant ferroelectric phenomena are provided.

Dielectric parameters relevant to microwave dielectric heating

Abstract: Microwave dielectric heating is rapidly becoming an established procedure in synthetic chemistry. This review summarises the basic theory underlying microwave dielectric heating and collates the dielectric data for a wide range of organic solvents which are commmonly used in microwave syntheses. The loss tangents of the solvents, which may be related to the ability of the solvent to absorb energy in a microwave cavity, depend on the relaxation times of the molecules. These relaxation times depend critically on the nature of the functional groups and the volume of the molecule. Functional groups capable of hydrogenbonding have a particularly strong influence on the relaxation times. The relaxation times of solvents decrease as the temperature of the solvent is increased. Loss tangent data at different microwave frequencies are also presented and discussed.

Experimental and theoretical study of a glow discharge at atmospheric pressure controlled by dielectric barrier

Abstract: The aim of this paper is to confirm the existence of atmospheric pressure dielectric controlled glow discharge and to describe its main behavior. Electrical measurements, short time exposure photographs, and numerical modeling were used to achieve this task. Experimental observations and numerical simulation are in good agreement. Therefore, the analysis of the calculated space and time variations of the electric field together with the ion and electron densities helps to explain the discharge mechanisms involved, showing the main role played by the electron as well as helium metastable density just before the discharge is turned on.

Femtosecond Optical Breakdown in Dielectrics

Abstract: We report measurements of the optical breakdown threshold and ablation depth in dielectrics with different band gaps for laser pulse durations ranging from 5 ps to 5 fs at a carrier wavelength of 780 nm. For t, 100 fs, the dominant channel for free electron generation is found to be either impact or multiphoton ionization (MPI) depending on the size of the band gap. The observed MPI rates are substantially lower than those predicted by the Keldysh theory. We demonstrate that sub-10-fs laser pulses open up the way to reversible nonperturbative nonlinear optics (at intensities greater than 10 14 Wycm 2 slightly below damage threshold) and to nanometer-precision laser ablation (slightly above threshold) in dielectric materials. [S0031-9007(98)05969-9]

Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications

Abstract: This paper reviews the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies. Different methods used to produce tantalum oxide layers are described, emphazing elaboration mechanisms and key parameters for each technique. We also review recent advances in the deposition of Ta 2 O 5 in the particular field of microelectronics where high quality layers are required from the structural and electrical points of view. The physical, structural, optical, chemical and electrical properties of tantalum oxide thin films on semiconductors are then presented and essential film parameters, such as optical index, film density or dielectric permittivity, are discussed. After a reminder of the basic mechanisms that control the bulk electrical conduction in insulating films, we carefully examine the origin of leakage currents in Ta 2 O 5 and present the state-of-the-art concerning the insulating behaviour of tantalum oxide layers. Finally, applications of tantalum oxide thin films are presented in the last part of this paper. We show how Ta 2 O 5 has been employed as an antireflection coating, insulating layer, gate oxide, corrosion resistant material, and sensitive layer in a wide variety of components, circuits and sensors.

Dynamics of glass-forming liquids. V. On the link between molecular dynamics and configurational entropy

Abstract: We compare dielectric relaxation τ(T) data of several low molecular weight glass-forming liquids with the predictions of the Adam–Gibbs theory using experimental data for the configurational entropy Sc(T). Combination of Adam–Gibbs and Vogel–Fulcher equations yields an expression for Sc(T) which can be compared with experimental data. Good agreement is found for a range of temperatures near Tg

Electric modulus and interfacial polarization in composite polymeric systems

Abstract: The applicability of the electric modulus formalism is investigated on a Debye-type relaxation process, the interfacial polarization or Maxwell–Wagner–Sillars effect. Electric modulus, which has been proposed for the description of systems with ionic conductivity and related relaxation processes, presents advantages in comparison to the classical approach of the real and imaginary part of dielectric permittivity. In composite polymeric materials, relaxation phenomena in the low-frequency region are attributed to the heterogeneity of the systems. For the investigation of these processes through electric modulus formalism, hybrid composite systems consisting of epoxy resin–metal powder–aramid fibres were prepared with various filler contents and their dielectric spectra were recorded in the frequency range 10 Hz–10 MHz in the temperature interval 30–150°C. The Debye, Cole–Cole, Davidson–Cole and Havriliak–Negami equations of dielectric relaxation are expressed in the electric modulus form. Correlation between experimental data and the various expressions produced, shows that interfacial polarization in the systems examined is, mostly, better described by the Davidson–Cole approach and only in the system with the higher heterogeneity must the Havriliak–Negami approach be used. © 1998 Chapman and Hall

Underlying physics of the thermochemical e model in describing low-field time-dependent dielectric breakdown in sio2 thin films

Abstract: The underlying physics behind the success of the thermochemical E model in describing time-dependent dielectric breakdown (TDDB) in SiO2 thin films is presented. Weak bonding states can be broken by thermal means due to the strong dipolar coupling of intrinsic defect states with the local electric field in the dielectric. This dipole-field coupling serves to lower the activation energy required for thermal bond-breakage and accelerates the dielectric degradation process. A temperature-independent field acceleration parameter γ and a field-independent activation energy ΔH can result when different types of disturbed bonding states are mixed during TDDB testing of SiO2 thin films. While γ for each defect type alone has the expected 1/T dependence and ΔH shows a linear decrease with electric field, a nearly temperature-independent γ and a field-independent ΔH can result when two or more types of disturbed bonding states are mixed. The good agreement between long-term TDDB data and the thermochemical model su...

Discovery of a useful thin-film dielectric using a composition-spread approach

Abstract: The continuing drive towards miniaturization of electronic devices1 is motivating the search for new materials. Consider, for example, the case of the much-used dynamic random-access memory. The minimum capacitance per cell that can be tolerated is expected2 to remain at 30–40 fF, but as the cell area decreases, the corresponding reduction in geometric capacitance has to be compensated for. So far, this has been achieved by resorting to complex non-planar structures and/or using much thinner films of the dielectric insulator, amorphous silicon dioxide (a-SiOx), although the latter approach is limited by the electric fields that can be supported by a-SiOx before its insulating properties break down. An alternative strategy is to develop thin-film insulators that have a dielectric constant significantly greater than that of a-SiOx, reducing the size of the fields required for device operation. Here we show that a composition-spread technique allows for the efficient evaluating of materials with both a high dielectric constant and a high breakdown field. We apply this approach to the Zr–Sn–Ti–O system, and we find that compositions close to Zr0.15Sn0.3Ti0.55O2−δ are better thin-film dielectrics than high-quality deposited a-SiOx. Although detailed tests of the performance of these materials have not yet been carried out, our initial results suggest that they are likely to be comparable to the best alternatives (such as (Ba, Sr)TiO3) currently being considered for integrated-circuit capacitors.

Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary

Abstract: The piezoelectric and dielectric constants in different crystal orientations of the lead zirconate titanate (PZT) have been phenomenologically calculated for the compositions near the morphotropic phase boundary at room temperature. For a tetragonal PZT, the effective piezoelectric constant d33 monotonously decreases as the crystal cutting angle from the spontaneous polarization direction [001] increases. However, for a rhombohedral PZT, the effective piezoelectric constant d33[001]// along the perovskite [001] direction was found to be much larger than those along the spontaneous polarization direction [111]. This crystal orientation-related enhancement is emphasized as the composition approaches the morphotropic phase boundary. This suggests that by adopting the perovskite [001] orientation with a rhombohedral composition near the morphotropic phase boundary, the piezoelectric constant d33 for PZT can be greatly enhanced.

A dielectric resonator for measurements of complex permittivity of low loss dielectric materials as a function of temperature

Abstract: An application of a mode dielectric resonator is described for precise measurements of complex permittivity and the thermal effects on permittivity for isotropic dielectric materials. The Rayleigh-Ritz technique was employed to find a rigorous relationship between permittivity, resonant frequency, and the dimensions of the resonant structure, with relative computational accuracy of less than . The influence of conductor loss and its temperature dependence was taken into account in the dielectric loss tangent evaluation. Complex permittivities of several materials, including cross-linked polystyrene, polytetrafluoroethylene, and alumina, were measured in the temperature range of 300-400 K. Absolute uncertainties of relative permittivity measurements were estimated to be smaller than 0.2%, limited mainly by uncertainty in the sample dimensions. For properly chosen sample dimensions, materials with dielectric loss tangents in the range of to can be measured using the mode dielectric resonator.

Chapter 167 Spectral intensities of f-f transitions

Abstract: Publisher Summary The intensities of intraconfigurational f–f transitions are reviewed in the chapter The chapter presents the transition mechanisms for lanthanide ions—namely, the magnetic dipole transition, the induced electric dipole transition, and the electric quadrupole transition It discusses the way experimental intensities can be determined from the spectra The chapter also focuses on the expression of the dipole strength and the oscillator strength in oriented and in randomly-oriented systems Correction factors for lanthanide ions in a dielectric medium are described in the chapter Although only a few magnetic dipole transitions exist for the trivalent lanthanide ions, magnetic dipole transitions are of interest, because their intensities are in a first approximation independent of the ligand environment and can, thus, be used as intensity standards The intensity of a magnetic dipole transition can be calculated exactly, provided that suitable wavefunctions are available These wavefunctions can be obtained from diagonalization of the energy matrix

Optical Properties of Self-Assembled 2D and 3D Superlattices of Silver Nanoparticles

Abstract: In this paper we compare the optical properties of nanosized silver particles dispersed in hexane solution and self-assembled in a 2D or 3D network. When the particles form monolayers organized in a hexagonal network, the plasmon peak of silver nanosized particles is shifted toward lower energy, with an increase in bandwidth compared to that observed with free coated particles dispersed in hexane solution. Such a shift is attributed to an increase in the dielectric constant of the matrix environment of the nanoparticles. When the particles form a 3D superlattice with a face-centered cubic (fcc) structure, the optical properties could be interpreted as an increase in the mean free path of the conduction electrons, which could indicate the presence of tunneling electrons across the double layers due to the coating of the particles.

Zirconium and/or hafnium oxynitride gate dielectric

Abstract: A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Zirconium oxynitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.

Optical Absorption of Insulators and the Electron-Hole Interaction: An Ab Initio Calculation

Abstract: We present a computationally efficient scheme to calculate the optical absorption of insulators from first principles, including the electron-hole interaction. Excited states of the solid are chosen to consist of single electron-hole pairs. The electron-hole interaction is statically screened using a model dielectric function. Only two pieces of input are required, the crystal structure of the material and the macroscopic dielectric constant. We apply this scheme to two wide-gap insulators, LiF and MgO, and obtain excellent agreement with experimental measurements of their UV reflectance spectra.

The role of interfaces on an apparent grain size effect on the dielectric properties for ferroelectric barium titanate ceramics

Abstract: We report the effect of interfaces (and thus internal surface area effects) on the value of dielectric constant (K′) calculated from capacitance and geometry data for sub-micron barium titanate (BaTiO3) ceramics prepared with decreasing grain size (and grain volumes). A series model is proposed to explain the decreasing values of apparent K′ obtained for grain sizes below 0.5 μm. A distinction is made between the true dielectric constant (K′) and the apparent dielectric constant (K′) calculated from experimental data. The progressive suppression in K′ is explained in terms of ferroelectric grains of constant dielectric constant (K′1) separated by a lower-K 2 boundary region (i.e., grain boundary) of constant thickness (d 2). The problem is one of an increasing interfacial surface area to grain volume ratio in fine-grain dielectrics. We begin by reporting original dielectric data for high pressure-densified ultrafine-grain BaTiO3 ceramics. Chemically prepared BaTiO3 powder was consolidated at high...

Transparent, metallo-dielectric, one-dimensional, photonic band-gap structures

Abstract: We investigate numerically the properties of metallo-dielectric, one-dimensional, photonic band-gap structures. Our theory predicts that interference effects give rise to a new transparent metallic structure that permits the transmission of light over a tunable range of frequencies, for example, the ultraviolet, the visible, or the infrared wavelength range. The structure can be designed to block ultraviolet light, transmit in the visible range, and reflect all other electromagnetic waves of lower frequencies, from infrared to microwaves and beyond. The transparent metallic structure is composed of a stack of alternating layers of a metal and a dielectric material, such that the complex index of refraction alternates between a high and a low value. The structure remains transparent even if the total amount of metal is increased to hundreds of skin depths in net thickness.

Deposition reactor having vaporizing, mixing and cleaning capabilities

Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.

Quantitative microwave near-field microscopy of dielectric properties

Abstract: A theoretical model analysis for a recently developed scanning evanescent microwave microscope has been performed. The result enables a quantitative microscopy of local complex dielectric constant profiles for dielectric materials. Various experiments were performed and found to be in good agreement with the theoretical results. The estimation of intrinsic resolution of the microscope suggests that nanometer spatial resolution is achievable. System analysis gives a limiting sensitivity of about δe/e∼1×10−5.

Generalized scale length for two-dimensional effects in MOSFETs

Abstract: We derive a new scale length for two-dimensional (2-D) effects in MOSFETs and discuss its significance. This derivation properly takes into account the difference in permittivity between the Si channel and the gate insulator, and thus permits an accurate understanding of the effects of using insufficiently scaled oxide or thicker higher permittivity gate insulators. The theory shows that the utility of higher dielectric constant insulators decreases for /spl epsiv///spl epsiv//sub 0/>-20, and that in no event should the insulator be thicker than the Si depletion depth. The approach is also applied to double-gated FET structures, resulting in a new more general scale length formula for them, too.

Charge injection into light-emitting diodes: Theory and experiment

Abstract: An analytic theory is presented for dark injection from a metallic electrode into a random hopping system, e.g., a conjugated polymer or a molecularly doped polymer. It encompasses injection of a charge carrier from the Fermi level of the electrode into tail states of the distribution of hopping states of the dielectric followed by either return of the charge carrier to the electrode or diffusive escape from the attractive image potential. The latter process resembles Onsager-type geminate pair dissociation in one dimension. The theory yields the injection current as a function of electric field, temperature and energetic width of the distribution of hopping states. At high electric fields it resembles that the current calculated from Fowler-Nordheim tunneling theory although tunneling transitions are not included in the theory. Good agreement with experimental data obtained for diode structures with conjugated polymers as a dielectric is found.

Intermixing at the tantalum oxide/silicon interface in gate dielectric structures

Abstract: Metal oxides with high dielectric constants have the potential to extend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx can form that limits the specific capacitance of the gate structure. We have examined the composition of this layer using high-resolution depth profiling of medium ion energy scattering combined with infrared spectroscopy and transmission electron microscopy. We find that the interfacial region is not pure SiO2, but is a complex depth-dependent ternary oxide of Si–Tax–Oy with a dielectric constant at least twice that of pure SiO2 as inferred from electrical measurements. High-temperature annealing crystallizes the Ta2O5 film and converts the composite oxide to a more pure SiO2 layer with a lower capacitance density. Using low postanneal temperatures, a stable composite oxide structure can be obtained with good electrical properties and an effective SiO2 thickness of...

High efficiency channel drop filter with absorption induced on/off switching and modulation

Abstract: A highly efficient channel drop filter. The filter employs a coupling element including a resonator-system between two waveguides, which contains at least two resonant modes. The resonator-system includes one or more interacting resonant cavities which in addition to being coupled to the waveguides, can also be coupled directly among themselves and indirectly among themselves via the waveguides. Each component of the coupling element can be configured or adjusted individually. The geometry and/or dielectric constant/refractive index of the resonator-system are configured so that the frequencies and decay rates of the resonant modes are made to be substantially the same. The filter can achieve 100% signal transfer between the waveguides at certain frequencies, while completely prohibiting signal transfer at other frequencies. In exemplary embodiments, the filter is configured with photonic crystals. In accordance with alternative embodiments of the invention, the filter is configured as an absorption induced on/off switch and modulator. The switching action is achieved with either electrical or optical absorption.

Multipactor discharge on metals and dielectrics: Historical review and recent theories

Abstract: This paper reviews the history of multipactor discharge theory, focusing on recent models of multipactor accessibility and saturation. Two cases are treated in detail: That of a first-order, two-surface multipactor, and that of a single-surface multipactor on a dielectric. In both cases, susceptibility curves are constructed to indicate the regions of external parameter space where multipactor is likely to occur, taking into account the dependence on surface materials, and the effects of space charge and cavity loading. In the case of a dielectric, multipactor is found to deliver about 1% of the rf power to the surface. The two cases are contrasted in light of experimental observations.

Alkanethiol self-assembled monolayers as the dielectric of capacitors with nanoscale thickness

Abstract: Alkanethiol self-assembled monolayers (SAMs) on a mercury surface are used to build a junction consisting of two opposing mercury surfaces with interposed SAMs: Hg-SAM/SAM-Hg. The liquid mercury surface provides a support for the SAM that is smooth, compliant, free of defects, and without the incommensurate lattice properties that characterize solid metal surfaces. The thickness of the dielectric (∼30–90 A) in this junction can be easily changed by using alkanethiols with different lengths. From capacitance measurements, a dielectric constant of 2.7±0.3 is calculated for the SAMs. The conductivity of SAMs on the Hg surface is σ=6±2×10−15 Ω−1 cm−1, a value close to that of bulk polyethylene. The junction sustains an electric field of 6 MV/cm.

Measurement of resonant frequency and quality factor of microwave resonators : comparison of methods

Abstract: Precise microwave measurements of sample conductivity, dielectric, and magnetic properties are routinely performed with cavity perturbation measurements. These methods require the accurate determination of quality factor and resonant frequency of microwave resonators. Seven different methods to determine the resonant frequency and quality factor from complex transmission coefficient data are discussed and compared to find which is most accurate and precise when tested using identical data. We find that the nonlinear least-squares fit to the phase versus frequency is the most accurate and precise when the signal-to-noise ratio is greater than 65. For noisier data, the nonlinear least-squares fit to a Lorentzian curve is more accurate and precise. The results are general and can be applied to the analysis of many kinds of resonant phenomena.