Showing papers on "Dielectric published in 2007"

Spectroscopic Ellipsometry: Principles and Applications

Abstract: Foreword. Preface. Acknowledgments. 1 Introduction to Spectroscopic Ellipsometry. 1.1 Features of Spectroscopic Ellipsometry. 1.2 Applications of Spectroscopic Ellipsometry. 1.3 Data Analysis. 1.4 History of Development. 1.5 Future Prospects. References. 2 Principles of Optics. 2.1 Propagation of Light. 2.2 Dielectrics. 2.3 Reflection and Transmission of Light. 2.4 Optical Interference. References. 3 Polarization of Light. 3.1 Representation of Polarized Light. 3.2 Optical Elements. 3.3 Jones Matrix. 3.4 Stokes Parameters. References. 4 Principles of Spectroscopic Ellipsometry. 4.1 Principles of Ellipsometry Measurement. 4.2 Ellipsometry Measurement. 4.3 Instrumentation for Ellipsometry. 4.4 Precision and Error of Measurement. References. 5 Data Analysis. 5.1 Interpretation of (PSI, DELTA). 5.2 Dielectric Function Models. 5.3 Effective Medium Approximation. 5.4 Optical Models. 5.5 Data Analysis Procedure. References. 6 Ellipsometry of Anisotropic Materials. 6.1 Reflection and Transmission of Light by Anisotropic Materials. 6.2 Fresnel Equations for Anisotropic Materials. 6.3 4x4 Matrix Method. 6.4 Interpretation of (PSI, DELTA) for Anisotropic Materials. 6.5 Measurement and Data Analysis of Anisotropic Materials. References. 7 Data Analysis Examples. 7.1 Insulators. 7.2 Semiconductors. 7.3 Metals/Semiconductors. 7.4 Organic Materials/Biomaterials. 7.5 Anisotropic Materials. References. 8 Real-Time Monitoring by Spectroscopic Ellipsometry. 8.1 Data Analysis in Real-Time Monitoring. 8.2 Observation of Thin-Film Growth by Real-Time Monitoring. 8.3 Process Control by Real-Time Monitoring. References. Appendices. 1 Trigonometric Functions. 2 Definitions of Optical Constants. 3 Maxwell's Equations for Conductors. 4 Jones-Mueller Matrix Conversion. 5 Kramers-Kronig Relations. Index.

Lead-free piezoelectric ceramics: Alternatives for PZT?

Abstract: Investigations in the development of lead-free piezoelectric ceramics have recently claimed comparable properties to the lead-based ferroelectric perovskites, represented by Pb(Zr,Ti)O3, or PZT In this work, the scientific and technical impact of these materials is contrasted with the various families of “soft” and “hard” PZTs On the scientific front, the intrinsic nature of the dielectric and piezoelectric properties are presented in relation to their respective Curie temperatures (T C) and the existence of a morphotropic phase boundary (MPB) Analogous to PZT, enhanced properties are noted for MPB compositions in the (Na,Bi)TiO3-BaTiO3 and ternary system with (K,Bi)TiO3, but offer properties significantly lower The consequences of a ferroelectric to antiferroelectric transition well below T C further limits their usefulness Though comparable with respect to T C, the high levels of piezoelectricity reported in the (K,Na)NbO3 family are the result of enhanced polarizability associated with the orthorhombic-tetragonal polymorphic phase transition being compositionally shifted downward As expected, the properties are strongly temperature dependent, while degradation occurs through the thermal cycling between the two distinct ferroelectric domain states Extrinsic contributions arising from domains and domain wall mobility were determined using high field strain and polarization measurements The concept of “soft” and “hard” lead-free piezoelectrics were discussed in relation to donor and acceptor modified PZTs, respectively Technologically, the lead-free materials are discussed in relation to general applications, including sensors, actuators and ultrasound transducers

A complex plane analysis of α‐dispersions in some polymer systems

Abstract: The α-dispersion in many polymer systems is the process to be associated with the glass transition temperature where many physical properties undergo drastic changes. We have measured and analyzed the complex dielectric behavior of the α-dispersions for five polymers [i.e., polycarbonate and polyisophthalate esters of bisphenol A, isotactic poly-(methyl methacrylate), poly(methyl acrylate), and a copolymer of phenyl methacrylate and acrylonitrile] and have found that the usual methods of analysis cannot be used to represent the data. However, it is possible to represent the relaxation process as the sum of two dispersions but there is no evidence to support this contention. An empirical expression is proposed to represent the data. This expression which takes the form of appears to be a general representation for the three known dispersions, i.e., Debye, circular arc, and skewed semicircle. The complex dielectric constants calculated with the aid of this expression and the parameters for each polymer system which was determined graphically were found to be in excellent agreement with the experimental complex dielectric constants. This method of representation was extended to sixteen α-dispersions reported in the literature always with excellent results.

Rayleigh Imaging of Graphene and Graphene Layers

Abstract: We investigate graphene and graphene layers on different substrates by monochromatic and white-light confocal Rayleigh scattering microscopy. The image contrast depends sensitively on the dielectric properties of the sample as well as the substrate geometry and can be described quantitatively using the complex refractive index of bulk graphite. For a few layers (<6), the monochromatic contrast increases linearly with thickness. The data can be adequately understood by considering the samples behaving as a superposition of single sheets that act as independent two-dimensional electron gases. Thus, Rayleigh imaging is a general, simple, and quick tool to identify graphene layers, which is readily combined with Raman scattering, that provides structural identification.

Phosphonic Acid-Modified Barium Titanate Polymer Nanocomposites with High Permittivity and Dielectric Strength

Abstract: Materials with high dielectric permittivity are important in electronic components such as capacitors, gate dielectrics, memories, and power-storage devices. Conventional highpermittivity materials such as barium titanate (BT) can be processed into thin films by using chemical solution deposition yielding a relative permittivity (er) of about 2500 and relatively low dielectric loss but require high-temperature sintering, which is not compatible with many substrate materials. Polymer-based dielectrics, such as biaxially oriented polypropylene (BOPP), have good processability with high dielectric strengths (∼ 640 V lm) suitable for high-energy-density capacitors, but the storage capacity (ca. 1–1.2 J cm) is limited by the low er (ca. 2.2) of these materials. [6] Various approaches to high-er materials based on nanocomposites containing metal particles or other conductive materials have been pursued. Such nanocomposites have afforded huge er values but the resulting materials are limited by the high-temperature processing required, high dielectric loss, or low dielectric strength. Polymer/ceramic nanocomposites in which high-er metal oxide nanoparticles such as BT and lead magnesium niobate–lead titanate (PMN–PT) are incorporated into a polymer host are of significant current interest. The combination of high-er nanoparticles with high-dielectric-strength polymer hosts offers the potential to obtain processable highperformance dielectric materials. Simple solution processing of BT particles in a polymer host generally results in poor film quality and inhomogeneities, which are mainly caused by agglomeration of the nanoparticles. Addition of surfactants, such as phosphate esters and oligomers thereof, can improve the dispersion of BT nanoparticles in host polymers and consequently the overall nanocomposite film quality. However, in such systems, residual free surfactant can lead to high leakage current and dielectric loss. Thus, approaches to bind surface modifiers to BT nanoparticles via robust chemical bonds are highly desirable. Ramesh et al. have reported on the use of trialkoxysilane surface modifiers for the dispersion of BT nanoparticles in epoxy polymer hosts resulting in nanocomposites with reasonably high er, up to 45. [12] With the objective of identifying ligands that can form stable bonds to a BT surface through coordination or condensation, we have investigated a series of different ligand functionalities. In this Communication, we report that phosphonic acid ligands effect robust surface modification of BT and related nanoparticles and that the use of particles modified with suitable phosphonic acid ligands leads to well-dispersed BT nanocomposite films with high er and high dielectric strength. We have investigated the binding of a variety of ligands to the surface of BT nanoparticles, as the stability of the binding on the surface is vital to effective surface modification. We examined the following set of ligands, each bearing an aliphatic octyl chain with a different terminal binding group: C8H17-X, where X = PO(OH)2 (OPA), SO2ONa (OSA), Si(OCH3)3 (OTMOS), and CO2H (OCA). Trialkoxysilanes are widely used surface modifiers for silicate, indium tin oxide, and other metal oxide surfaces. Phosphonic acids have been reported to modify TiO2, ZrO2, and indium tin oxide surfaces and are thought to couple to the surface of metal oxides either by heterocondensation with surface hydroxyl groups or coordination to metal ions on the surface. Carboxylic acid and sulfonic acid groups may also bind to the surface in a similar manner. A sample of each ligand was mixed with BT nanoparticles (30–50 nm, 0.5 mmol ligand/ g BT) in an ethanol/water solution and stirred at 80 °C, followed by extensive washing with ethanol or water and centrifugation to remove excess and/or physisorbed ligand. The treated BT nanoparticles were dried and characterized by using Fourier transform infrared (FTIR) spectroscopy and thermogravimetric analysis (TGA). Figure 1a shows a comparison of FTIR spectra in the C–H stretching region for the BT nanoparticles treated with the ligands described above, followed by washing. These results C O M M U N IC A IO N

Permittivity of pure water, at standard atmospheric pressure, over the frequency range 0-25 THz and the temperature range 0-100 °C

Abstract: All the currently available experimental permittivity data for pure water are used to derive an interpolation function that precisely represents e(ν,t,) at standard atmospheric pressure, for frequencies and temperatures in the ranges 0⩽ν⩽25THz and 0⩽t⩽100°C. The permittivity data is represented in terms of relaxations and resonances processes. There are three relaxations in the microwave region and two resonances in the far infrared. The temperature dependence of the relaxation and resonance parameters are determined. For example, at 25°C the three relaxation frequencies are 18.56GHz, 167.83GHz, 1.944THz and the two resonance frequencies are 4.03 and 14.48THz.

Strain-gradient-induced polarization in SrTiO3 single crystals.

Abstract: Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, can significantly affect the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO3 as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO3 may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO3 may be polar.

Method to analyze electromechanical stability of dielectric elastomers

Abstract: Subject to an electric voltage, a layer of a dielectric elastomer reduces its thickness, so that the voltage induces a high electric field. The positive feedback may cause the elastomer to thin down drastically, resulting in an electrical breakdown. The authors show that the electromechanical instability occurs when the Hessian of the free-energy function ceases to be positive definite. Their calculation shows that the stability of the actuator is markedly enhanced by prestresses, agreeing with existing experimental observations.

Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering.

Abstract: We propose a technique for achieving large improvements in carrier mobilities in 2- and 1-dimensional semiconductor nanostructures by modifying their dielectric environments. We show that by coating the nanostructures with high-kappa dielectrics, scattering from Coulombic impurities can be strongly damped. Though screening is also weakened, the damping of Coulombic scattering is much larger, and the resulting improvement in mobilities of carriers can be as much as an order of magnitude for thin 2D semiconductor membranes, and more for semiconductor nanowires.

Single cell dielectric spectroscopy

Abstract: Over the last century a number of techniques have been developed which allow the measurement of the dielectric properties of biological particles in fluid suspension. The majority of these techniques are limited by the fact that they only provide an average value for the dielectric properties of a collection of particles. More recently, with the advent of microfabrication techniques and the Lab-on-a-chip, it has been possible to perform dielectric spectroscopic experiments on single biological particles suspended in physiological media. In this paper we review current methods for single cell dielectric spectroscopy. We also discuss alternative single cell dielectric measurement techniques, specifically the ac electrokinetic methods of dielectrophoresis and electrorotation. Single cell electrical impedance spectroscopy is also discussed with relevance to a microfabricated flow cytometer. We compare impedance spectroscopy data obtained from measurements made using a microfabricated flow cytometer with simulation data obtained using an equivalent circuit model for the device.

Electromechanical hysteresis and coexistent states in dielectric elastomers

Abstract: When a voltage is applied to a layer of a dielectric elastomer, the layer reduces in thickness and expands in area. A recent experiment has shown that the homogeneous deformation of the layer can be unstable, giving way to an inhomogeneous deformation, such that regions of two kinds coexist in the layer, one being flat and the other wrinkled. To analyze this instability, we construct for a class of model materials, which we call ideal dielectric elastomers, a free-energy function comprising contributions from stretching and polarizing. We show that the free-energy function is typically non-convex, causing the elastomer to undergo a discontinuous transition from a thick state to a thin state. When the two states coexist in the elastomer, a region of the thin state has a large area, and wrinkles when constrained by nearby regions of the thick state. We show that an elastomer described by the Gaussian statistics cannot stabilize the thin state, but a stiffening elastomer near the extension limit can. We further show that the instability can be tuned by the density of cross links and the state of stress.

Processing, Structure, Properties, and Applications of PZT Thin Films

Abstract: There has been a resurgence of complex oxides of late owing to their ferroelectric and ferromagnetic properties. Although these properties had been recognized decades ago, the renewed interest stems from modern deposition techniques that can produce high quality materials and attractive proposed device concepts. In addition to their use on their own, the interest is building on the use of these materials in a stack also. Ferroelectrics are dielectric materials that have spontaneous polarization in certain temperature range and show nonlinear polarization–electric field dependence called a hysteresis loop. The outstanding properties of the ferroelectrics are due to non-centro-symmetric crystal structure resulting from slight distortion of the cubic perovskite structure. The ferroelectric materials are ferroelastic also in that a change in shape results in a change in the electric polarization (thus electric field) developed in the crystal and vice versa. Therefore they can be used to transform acoustic wav...

High Dielectric Performance of Polymer Composite Films Induced by a Percolating Interparticle Barrier Layer

Abstract: The mechanical flexibility and tunable properties of polymer-based materials make them attractive ones for a lot of applications. Exploring polymer-based dielectrics, such as ones used for capacitors and charge-storage applications, with high dielectric constant (high-j) has recently aroused considerable interest. Especially, motivated by higher function and further miniaturization of electronics, embedding (or integrating) polymer-based capacitors into the inner layers of organic printed circuit boards (PCBs) allows packaging substrate miniaturization and better electrical performance, which is a key for organic-based system-on-package technologies. But as capacitors, the relative dielectric constant j of general polymers (being good insulators) is too low (e.g., j< 5).Thus, a key issue is to substantially raise the dielectric constant of the polymers while retaining low dielectric loss. A few strategies have been developed to raise the j of polymer-based materials. A common approach is to add high-j ceramic fillers (e.g., BaTiO3) into a polymer. High loading of the ceramic fillers in the polymer composite, usually over 50 vol %, can increase j by about ten times relative to the polymer matrix, but dramatically decreases the adhesion of the composite (and increases its porosity) thus deteriorating the adaptability between the composite and the organic circuit boards. Another strategy is to fabricate percolative composite capacitors by using conductive fillers (e.g., metal particles). As the volume fraction f of the fillers increases to the vicinity of the percolation threshold fc, j of the composites can be dramatically enhanced as described by the well-known power law

Dielectric elastomers as next-generation polymeric actuators

Abstract: Due to their versatile properties, robust behavior, facile processability and low cost, organic polymers have become the material of choice for an increasing number of mature and cutting-edge technologies. In the last decade or so, a new class of polymers capable of responding to external electrical stimulation by displaying significant size or shape change has emerged. These responsive materials, collectively referred to as electroactive polymers (EAPs), are broadly classified as electronic or ionic according to their operational mechanism. Electronic EAPs generally exhibit superior performance relative to ionic EAPs in terms of actuation strain, reliability, durability and response time. Among electronic EAPs, dielectric elastomers exhibit the most promising properties that mimic natural muscle for use in advanced robotics and smart prosthetics, as well as in haptic and microfluidic devices. Elastomers derived from homopolymers such as acrylics and silicones have received considerable attention as dielectric EAPs, whereas novel dielectric EAPs based on selectively swollen nanostructured block copolymers with composition-tailorable properties have only recently been reported. Here, we provide an overview of various EAPs in terms of their operational mechanisms, uses and shortcomings, as well as a detailed account of dielectric elastomers as next-generation actuators.

Polymer Gate Dielectric Surface Viscoelasticity Modulates Pentacene Transistor Performance

Abstract: Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) performance discontinuities at well-defined growth temperatures The changes reflect the higher chain mobility of the dielectric in its rubbery state and are independent of dielectric film thickness Optimization of organic TFT performance must recognize this fundamental buried interface viscoelasticity effect, which is detectable in the current-voltage response

Theory of Polarization: A Modern Approach

Abstract: In this Chapter we review the physical basis of the modern theory of polarization, emphasizing how the polarization can be defined in terms of the accumulated adiabatic flow of current occurring as a crystal is modified or deformed. We explain how the polarization is closely related to a Berry phase of the Bloch wavefunctions as the wavevector is carried across the Brillouin zone, or equivalently, to the centers of charge of Wannier functions constructed from the Bloch wavefunctions. A resulting feature of this formulation is that the polarization is formally defined only modulo a “quantum of polarization” – in other words, that the polarization may be regarded as a multi-valued quantity. We discuss the consequences of this theory for the physical understanding of ferroelectric materials, including polarization reversal, piezoelectric effects, and the appearance of polarization charges at surfaces and interfaces. In so doing, we give a few examples of realistic calculations of polarization-related quantities in perovskite ferroelectrics, illustrating how the present approach provides a robust and powerful foundation for modern computational studies of dielectric and ferroelectric materials.

Raman spectroscopy of optical phonon confinement in nanostructured materials

Abstract: If the medium surrounding a nano-grain does not support the vibrational wavenumbers of a material, the optical and acoustic phonons get confined within the grain of the nanostructured material. This leads to interesting changes in the vibrational spectrum of the nanostructured material as compared to that of the bulk. Absence of periodicity beyond the particle dimension relaxes the zone-centre optical phonon selection rule, causing the Raman spectrum to have contributions also from phonons away from the Brillouin-zone centre. Theoretical models and calculations suggest that the confinement results in asymmetric broadening and shift of the optical phonon Raman line, the magnitude of which depends on the widths of the corresponding phonon dispersion curves. This has been confirmed for zinc oxide nanoparticles. Microscopic lattice dynamical calculations of the phonon amplitude and Raman spectra using the bond-polarizability model suggest a power-law dependence of the peak-shift on the particle size. This article reviews recent results on the Raman spectroscopic investigations of optical phonon confinement in several nanocrystalline semiconductor and ceramic/dielectric materials, including those in selenium, cadmium sulphide, zinc oxide, thorium oxide, and nano-diamond. Resonance Raman scattering from confined optical phonons is also discussed. Copyright © 2007 John Wiley & Sons, Ltd.

Dielectric metamaterials based on electric and magnetic resonances of silicon carbide particles.

Abstract: Silicon carbide particles exhibit both electric and magnetic optical resonances, allowing unexplored dielectric metamaterial designs. Experimental extinction spectra and Mie theory calculations of single microscale rod-shaped particles reveal three observable midinfrared resonant modes. Two of the modes are degenerate, with a frequency that can be tuned according to a resonance condition derived within the Letter. The existence of both electric and magnetic resonances may enable a novel negative refractive index metamaterial design.

Modified (K0.5Na0.5)NbO3 based lead-free piezoelectrics with broad temperature usage range

Abstract: (K0.5Na0.5)NbO3 (KNN) based lead-free materials exhibit arguably, comparable piezoelectric properties to conventional Pb(Zr,Ti)O3 ceramics owing to an orthorhombic to tetragonal polymorphic phase transition (TO-T) occurring near room temperature. However, this transition correspondingly results in a strong temperature dependence of the dielectric and piezoelectric properties, being limited further by domain instability, during thermal cycling between the two ferroelectric phases. Analogous to BaTiO3 based piezoelectrics, the addition of CaTiO3 in KNN materials was found to shift the TO-T well below room temperature. Piezoelectric and electromechanical values of KNN–LiSbO3–CaTiO3 material were found to be d33∼210pC∕N, d15∼268pC∕N and k33∼61%, k15∼56%, respectively, with greatly improved temperature stability over the temperature range of −50–200°C, demonstrating practical potential for actuator and/or ultrasonic transducer applications.

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Abstract: We present a theoretical study of electron mobility in cylindrical gated silicon nanowires at 300 K based on the Kubo-Greenwood formula and the self-consistent solution of the Schrodinger and Poisson equations. A rigorous surface roughness scattering model is derived, which takes into account the roughness-induced fluctuation of the subband wave function, of the electron charge, and of the interface polarization charge. Dielectric screening of the scattering potential is modeled within the random phase approximation, wherein a generalized dielectric function for a multi-subband quasi-one-dimensional electron gas system is derived accounting for the presence of the gate electrode and the mismatch of the dielectric constant between the semiconductor and gate insulator. A nonparabolic correction method is also presented, which is applied to the calculation of the density of states, the matrix element of the scattering potential, and the generalized Lindhard function. The Coulomb scattering due to the fixed i...

Electrohydrodynamic force in dielectric barrier discharge plasma actuators

Abstract: Surface dielectric barrier discharges (DBDs) have been proposed as actuators for flow control. In this paper we discuss the basic mechanisms responsible for the electrohydrodynamic (EHD) force exerted by the discharge on the gas molecules. A two-dimensional fluid model of the DBD is used to describe the plasma dynamics, to understand the basic physics associated with the EHD force and to give some quantitative estimation of the force under simplified conditions. The results show that for ramp or sinusoidal voltage waveforms, the discharge consists of large amplitude short current pulses during which a filamentary plasma spreads along the surface, separated in time by long duration, low current discharge phases of a Townsend or corona type. The contribution of the low current phases to the total force exerted by the discharge on the gas is dominant because their duration is much longer than that of the current pulses and because the force takes place in a much larger volume. A description of the different discharge regimes and a parametric study of the EHD force as a function of voltage rise time and dielectric thickness is presented.

A Consistent Molecular Treatment of Dielectric Phenomena

Abstract: Revue des etudes sur la constante dielectrique et la permittivite des molecules a l'etat liquide. Etudes theoriques

Electromechanical coupling in dielectric elastomer actuators

Abstract: In this paper the electromechanical coupling in dielectric elastomer actuators is investigated. An equation proposed by Pelrine et al. [R.E. Pelrine, R.D. Kornbluh, J.P. Joseph, Electrostriction of polymer dielectrics with compliant electrodes as a means of actuation, Sens. Actuators A 64 (1998) 77–85] is commonly used for the calculation of the electrostatic forces in dielectric elastomer systems. This equation is analyzed here with (i) energy consideration and (ii) numerical calculations of charge and force distribution. A new physical interpretation of the electrostatic forces acting on the dielectric elastomer film is proposed, with contributions from in-plane and out-of-plane stresses. Representation of this force distribution using Pelrine's equation is valid for an incompressible material, such as the acrylic elastomer VHB 4910. Experiments are performed for the measurement of the dielectric constant ɛ r of the acrylic elastomer VHB 4910 for different film deformations. The values of ɛ r are shown to decrease with increasing pre-stretch ratio λ p , from 4.7 for the un-stretched film, down to 2.6 for equi-biaxial deformation with λ p = 5. This result is important in that it corrects the constant value of 4.7 largely applied in literature for pre-stretched dielectric elastomer actuator modeling. With the results of this work the predictive capabilities of a model describing the three-dimensional passive and active actuator behavior are remarkably improved.

Measurement of the temperature dependence of the Casimir-Polder force

Abstract: We report on the first measurement of a temperature dependence of the Casimir-Polder force. This measurement was obtained by positioning a nearly pure 87Rb Bose-Einstein condensate a few microns from a dielectric substrate and exciting its dipole oscillation. Changes in the collective oscillation frequency of the magnetically trapped atoms result from spatial variations in the surface-atom force. In our experiment, the dielectric substrate is heated up to 605 K, while the surrounding environment is kept near room temperature (310 K). The effect of the Casimir-Polder force is measured to be nearly 3 times larger for a 605 K substrate than for a room-temperature substrate, showing a clear temperature dependence in agreement with theory.