Showing papers on "Dielectric published in 2018"

Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk

Abstract: Hexagonal boron nitride (h-BN) and semiconducting transition metal dichalcogenides (TMDs) promise greatly improved electrostatic control in future scaled electronic devices. To quantify the prospects of these materials in devices, we calculate the out-of-plane and in-plane dielectric constant from first principles for TMDs in trigonal prismatic and octahedral coordination, as well as for h-BN, with a thickness ranging from monolayer and bilayer to bulk. Both the ionic and electronic contribution to the dielectric response are computed. Our calculations show that the out-of-plane dielectric response for the transition-metal dichalcogenides is dominated by its electronic component and that the dielectric constant increases with increasing chalcogen atomic number. Overall, the out-of-plane dielectric constant of the TMDs and h-BN increases by less than 15% as the number of layers is increased from monolayer to bulk, while the in-plane component remains unchanged. Our computations also reveal that for octahedrally coordinated TMDs the ionic (static) contribution to the dielectric response is very high (4.5 times the electronic contribution) in the in-plane direction. This indicates that semiconducting TMDs in the tetragonal phase will suffer from excessive polar-optical scattering thereby deteriorating their electronic transport properties. The out-of-plane dielectric constant of transition metal dichalcogenides and h-BN is thickness-dependent, unlike their in-plane counterpart. A team led by William Vandenberghe at the University of Texas at Dallas performed calculations of the optical and static relative permittivity of free-standing monolayer, bilayer, and bulk transition metal dichalcogenides, in the in-plane and out-of-plane directions. In h-BN, the in-plane contribution was found to be larger than its out-of-plane counterpart, and independent on the number of h-BN layers. Conversely, the out-of-plane h-BN dielectric constant showed an increase when going from monolayer to bulk. In transition metal dichalcogenides, the dielectric constant components displayed similar trends to those observed in h-BN with regards to their thickness evolution. The calculations also indicated that the electronic component dominates the overall dielectric response for most of the analyzed 2D materials.

Anomalously low dielectric constant of confined water

Abstract: The dielectric constant of interfacial water has been predicted to be smaller than that of bulk water (= 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically-flat walls separated by various distances down to 1 nm. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane dielectric constant is only approximately 2. The electrically dead layer is found to be two to three molecules thick. These results provide much needed feedback for theories describing water-mediated surface interactions and behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

Multilayer Lead-Free Ceramic Capacitors with Ultrahigh Energy Density and Efficiency.

Abstract: The utilization of antiferroelectric (AFE) materials is thought to be an effective approach to enhance the energy density of dielectric capacitors. However, the high energy dissipation and inferior reliability that are associated with the antiferroelectric-ferroelectric phase transition are the main issues that restrict the applications of antiferroelectric ceramics. Here, simultaneously achieving high energy density and efficiency in a dielectric ceramic is proposed by combining antiferroelectric and relaxor features. Based on this concept, a lead-free dielectric (Na0.5 Bi0.5 )TiO3 -x(Sr0.7 Bi0.2 )TiO3 (NBT-xSBT) system is investigated and the corresponding multilayer ceramic capacitors (MLCCs) are fabricated. A record-high energy density of 9.5 J cm-3 , together with a high energy efficiency of 92%, is achieved in NBT-0.45SBT multilayer ceramic capacitors, which consist of ten dielectric layers with the single-layer thickness of 20 µm and the internal electrode area of 6.25 mm2 . Furthermore, the newly developed capacitor exhibits a wide temperature usage range of -60 to 120 °C, with an energy-density variation of less than 10%, and satisfactory cycling reliability, with degradation of less than 8% over 106 cycles. These characteristics demonstrate that the NBT-0.45SBT multilayer ceramic is a promising candidate for high-power energy storage applications.

High-Temperature Dielectric Materials for Electrical Energy Storage

Abstract: The demand for high-temperature dielectric materials arises from numerous emerging applications such as electric vehicles, wind generators, solar converters, aerospace power conditioning, and downhole oil and gas explorations, in which the power systems and electronic devices have to operate at elevated temperatures. This article presents an overview of recent progress in the field of nanostructured dielectric materials targeted for high-temperature capacitive energy storage applications. Polymers, polymer nanocomposites, and bulk ceramics and thin films are the focus of the materials reviewed. Both commercial products and the latest research results are covered. While general design considerations are briefly discussed, emphasis is placed on material specifications oriented toward the intended high-temperature applications, such as dielectric properties, temperature stability, energy density, and charge-discharge efficiency. The advantages and shortcomings of the existing dielectric materials are identif...

The Behavior of Electromagnetic Fields at Edges

Abstract: The behavior of an electromagnetic field in the neighborhood of the common edge of angular dielectric or conducting regions is determined from the condition that the energy density must be integrable over any finite domain (the so-called edge condition). Two cases are treated in detail 1) A region consisting of a conducting wedge and two different dielectric wedges with a common edge. 2) A region consisting of two different dielectric wedges with a common edge. It is also shown that near such edges, electrostatic and magnetostatic fields will exhibit the same behavior as the electromagnetic field.

Direct Growth of Edge-Rich Graphene with Tunable Dielectric Properties in Porous Si3N4 Ceramic for Broadband High-Performance Microwave Absorption

Abstract: High-performance graphene microwave absorption materials are highly desirable in daily life and some extreme situations. A simple technique for the direct growth of graphene as absorption fillers in wave-transmitting matrices is of paramount importance to bring it to real-world application. Herein, a simple chemical vapor deposition (CVD) route for the direct growth of edge-rich graphene (ERG) with tailored structures and tunable dielectric properties in porous Si3N4 ceramics using only methyl alcohol (CH3OH) as precursor is reported. The large O/C atomic ratio of CH3OH helps to build a mild oxidizing atmosphere and leads to a unique structure featuring open graphite nanosteps and freestanding nanoplanes, endowing the ERG/Si3N4 hybrid with an appropriate balance between good impedance matching and strong loss capacity. Accordingly, the prepared materials exhibit superior electromagnetic wave absorption, far surpassing that of traditional CVD graphene and reduced graphene oxide-based materials, achieving an effective absorption bandwidth of 4.2 GHz covering the entire X band, with a thickness of 3.75 mm and a negligibly low loading content of absorbents. The results provide new insights for developing novel microwave absorption materials with strong reflection loss and wide absorption frequency range.

Steep-slope hysteresis-free negative capacitance MoS 2 transistors

Abstract: The so-called Boltzmann tyranny defines the fundamental thermionic limit of the subthreshold slope of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV dec-1 at room temperature and therefore precludes lowering of the supply voltage and overall power consumption 1,2 . Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier 3 . Meanwhile, two-dimensional semiconductors such as atomically thin transition-metal dichalcogenides, due to their low dielectric constant and ease of integration into a junctionless transistor topology, offer enhanced electrostatic control of the channel 4-12 . Here, we combine these two advantages and demonstrate a molybdenum disulfide (MoS2) two-dimensional steep-slope transistor with a ferroelectric hafnium zirconium oxide layer in the gate dielectric stack. This device exhibits excellent performance in both on and off states, with a maximum drain current of 510 μA μm-1 and a sub-thermionic subthreshold slope, and is essentially hysteresis-free. Negative differential resistance was observed at room temperature in the MoS2 negative-capacitance FETs as the result of negative capacitance due to the negative drain-induced barrier lowering. A high on-current-induced self-heating effect was also observed and studied.

Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering.

Abstract: Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm−3, together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage. Dielectrics with high capacitive energy storage density are essential for modern electrical devices and pulsed power systems. Here, the authors realised superior energy storage performance in lead-free bismuth ferrite-based relaxor ferroelectric films through domain engineering.

Anomalously low dielectric constant of confined water

Abstract: The dielectric constant e of interfacial water has been predicted to be smaller than that of bulk water (e ≈ 80) because the rotational freedom of water dipoles is expected to decrease near surfaces, yet experimental evidence is lacking. We report local capacitance measurements for water confined between two atomically flat walls separated by various distances down to 1 nanometer. Our experiments reveal the presence of an interfacial layer with vanishingly small polarization such that its out-of-plane e is only ~2. The electrically dead layer is found to be two to three molecules thick. These results provide much-needed feedback for theories describing water-mediated surface interactions and the behavior of interfacial water, and show a way to investigate the dielectric properties of other fluids and solids under extreme confinement.

Directional lasing in resonant semiconductor nanoantenna arrays

Abstract: High-index dielectric and semiconductor nanoparticles supporting strong electric and magnetic resonances have drawn significant attention in recent years. However, until now, there have been no experimental reports of lasing action from such nanostructures. Here, we demonstrate directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum generated by the collective, vertical electric dipole resonances excited in the nanopillars for subdiffractive arrays. We control the directionality of the emitted light while maintaining a high quality factor (Q = 2,750). The lasing directivity and wavelength can be tuned via the nanoantenna array geometry and by modifying the gain spectrum of GaAs with temperature. The obtained results provide guidelines for achieving surface-emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.

Selected Values of Electric Dipole Moments for Molecules in the Gas Phase

Abstract: : This table revises, brings up to date, and extends the coverage on numerical values for dipole moments which was included in NBS Circular 537, Tables of Dielectric Constants and Electric Dipole Moments of Substances in the Gaseous State, prepared by Maryott and Buckley in 1953. A recommended value with an estimate of accuracy is presented for more than five hundred organic and inorganic compounds. Extensive comments are given on the definition of dipole moment and principal methods of dipole moment measurement, as well as an exposition of the criteria employed in selecting the tabulated data.

Large Dielectric Constant Enhancement in MXene Percolative Polymer Composites.

Abstract: We demonstrate that poly(vinylidene fluoride) (PVDF)-based percolative composites using two-dimensional (2D) MXene nanosheets as fillers exhibit significantly enhanced dielectric permittivity. The poly(vinylidene fluoride-trifluoro-ethylene-chlorofluoroehylene) (P[VDF-TrFE-CFE]) polymer embedded with 2D Ti3C2Tx nanosheets reaches a dielectric permittivity as high as 105 near the percolation limit of about 15.0 wt % MXene loading, which surpasses all previously reported composites made of carbon-based fillers in the same polymer. With up to 10 wt % MXene loading, the dielectric loss of the MXene/P(VDF-TrFE-CFE) composite indicates only an approximately 5-fold increase (from 0.06 to 0.35), while the dielectric constant increased by 25 times over the same composition range. Furthermore, the ratio of permittivity to loss factor of the MXene–polymer composite is superior to that of all previously reported fillers in this same polymer. The dielectric constant enhancement effect is demonstrated to exist in other...

Silver Niobate Lead-Free Antiferroelectric Ceramics: Enhancing Energy Storage Density by B-Site Doping.

Abstract: Lead-free dielectric ceramics with high recoverable energy density are highly desired to sustainably meet the future energy demand. AgNbO3-based lead-free antiferroelectric ceramics with double ferroelectric hysteresis loops have been proved to be potential candidates for energy storage applications. Enhanced energy storage performance with recoverable energy density of 3.3 J/cm3 and high thermal stability with minimal energy density variation (<10%) over a temperature range of 20-120 °C have been achieved in W-modified AgNbO3 ceramics. It is revealed that the W6+ cations substitute the B-site Nb5+ and reduce the polarizability of B-site cations, leading to the enhanced antiferroelectricity, which is confirmed by the polarization hysteresis and dielectric tunability. It is believed that the polarizability of B-site cations plays a dominant role in stabilizing the antiferroelectricity in AgNbO3 system, in addition to the tolerance factor, which opens up a new design approach to achieve stable antiferroelectric materials.

Frequency and temperature-dependence of dielectric permittivity and electric modulus studies of the solid solution Ca0.85Er0.1Ti1−xCo4x/3O3 (0 ≤ x ≤ 0.1)

Abstract: The dielectric properties of Ca0.85Er0.1Ti1−xCo4x/3O3 (CETCox) (x = 0.00, 0.05 and 0.10), prepared by a sol–gel method, were systematically characterized. The temperature and frequency dependence of the dielectric properties showed a major effect of the grain and grain boundary. The dielectric constant and dielectric loss of CETCox decreased sharply with increasing frequency. This is referred to as the Maxwell–Wagner type of polarization in accordance with Koop's theory. As a function of temperature, the dielectric loss and the real part of permittivity decreased with increasing frequency as well as Co rate. Indeed, a classical ferroelectric behavior was observed for x = 0.00. The non-ferroelectric state of the grain boundary and its correlation with structure, however, proved the existence of a relaxor behavior for x = 0.05 and 0.10. The complex electric modulus analysis M*(ω) confirmed that the relaxation process is thermally activated. The normalized imaginary part of the modulus indicated that the relaxation process is dominated by the short range movement of charge carriers.

A high dielectric constant non-fullerene acceptor for efficient bulk-heterojunction organic solar cells

Abstract: The majority of organic semiconductors have a low relative dielectric constant (er 6) has attracted a very limited attention. Moreover, high performance OSCs based on high dielectric constant photovoltaic materials are still in their infancy. Herein, we report an oligoethylene oxide side chain-containing non-fullerene acceptor (ITIC-OE) with a high relative dielectric constant of er ≈ 9.4, which is two times larger than that of its alkyl chain-containing counterpart ITIC. Encouragingly, the OSCs based on ITIC-OE show a high power conversion efficiency of 8.5%, which is the highest value for OSCs that employ high dielectric constant materials. Nevertheless, this value is lower than those of ITIC-based control devices. The less phase-separated morphology in blend films due to the reduced crystallinity of ITIC-OE and the too good miscibility between PBDB-T and ITIC-OE are responsible for the lower device performance. This work suggests additional prerequisites to make high dielectric constants play a significant role in OSCs.

Interfacial Coupling Effect in Organic/Inorganic Nanocomposites with High Energy Density.

Abstract: Organic/inorganic nanocomposites (OINs) can be potentially used as high-performance capacitors due to their rapid charge-discharge capability along with respectable power density. The coupling effect of the filler/matrix interface plays a prominent role in the dielectric and electric properties of OINs. Along with a review of contemporary theoretical models, recent advances in interfacial optimization to improve energy density through careful interface control and design are also presented. Possible mechanisms that may improve energy density and potential applications for high-energy-density capacitors are also highlighted.

Polymer Nanocomposites with Ultrahigh Energy Density and High Discharge Efficiency by Modulating their Nanostructures in Three Dimensions.

Abstract: Manipulating microstructures of composites in three dimensions has been a long standing challenge. An approach is proposed and demonstrated to fabricate artificial nanocomposites by controlling the 3D distribution and orientation of oxide nanoparticles in a polymer matrix. In addition to possessing much enhanced mechanical properties, these nanocomposites can sustain extremely high voltages up to ≈10 kV, exhibiting high dielectric breakdown strength and low leakage current. These nanocomposites show great promise in resolving the paradox between dielectric constant and breakdown strength, leading to ultrahigh electrical energy density (over 2000% higher than that of the bench-mark polymer dielectrics) and discharge efficiency. This approach opens up a new avenue for the design and modulation of nanocomposites. It is adaptable to the roll-to-roll fabrication process and could be employed as a general technique for the mass production of composites with intricate nanostructures, which is otherwise not possible using conventional polymer processing techniques.

Designing lead-free bismuth ferrite-based ceramics learning from relaxor ferroelectric behavior for simultaneous high energy density and efficiency under low electric field

Abstract: Bismuth ferrite (BiFeO3, BFO) possesses very large spontaneous polarization, which provides a great potential in dielectric energy-storage capacitors. However, the presence of large remanent polarization heavily restricts the achievement of excellent performance in the energy storage field. Herein we designed local compositional disorder and constructed quenched random fields to maximize the discrepancy between the maximum polarization and the remanent polarization by means of introducing Zn2+ and Ta5+ at B-sites together in BiFeO3-based solution. Interestingly, pinched-hysteresis loops were observed in this Ba(Zn1/2Ta2/3)O3-modified BFO-based solution. Ultrahigh recoverable energy density (2.56 J cm−3) was first reported under low electric field (16 kV mm−1), which is much superior to the previous results regarding BFO-based bulk ceramics. In addition, an excellent recoverable energy density (>2 J cm−3) and a high efficiency (>80%) were obtained simultaneously in this BZT-modified BFO-based bulk material under low electric field (<20 kV mm−1). These results demonstrate that the strategy of constructing weakly coupled polar structures is feasible and effective to boost the energy density and efficiency for BiFeO3-based bulk ceramics, which may pave a significant step towards utilizing energy-storage applications for BiFeO3-based materials.

Label-free sensing of ultralow-weight molecules with all-dielectric metasurfaces supporting bound states in the continuum

Abstract: The realization of an efficient optical sensor based on a photonic crystal metasurface supporting bound states in the continuum is reported. Liquids with different refractive indices, ranging from 1.4000 to 1.4480, are infiltrated in a microfluidic chamber bonded to the sensing dielectric metasurface. A bulk liquid sensitivity of 178 nm/RIU is achieved, while a Q-factor of about 2000 gives a sensor figure of merit up to 445 in air at both visible and infrared excitations. Furthermore, the detection of ultralow-molecular-weight (186 Da) molecules is demonstrated with a record resonance shift of 6 nm per less than a 1 nm thick single molecular layer. The system exploits a normal-to-the-surface optical launching scheme, with excellent interrogation stability and demonstrates alignment-free performances, overcoming the limits of standard photonic crystals and plasmonic resonant configurations.

Lasing action in active dielectric nanoantenna arrays.

Abstract: Directional lasing, with a low threshold and high quality factor, in active dielectric nanoantenna arrays is demonstrated. This is achieved through a leaky resonance excited in coupled gallium arsenide (GaAs) nanopillars. The leaky resonance is formed by partially breaking a bound state in the continuum (BIC) generated by the collective, vertical electric dipole resonances excited in the nanopillars for sub-diffractive arrays. By opening an unprotected, diffractive channel along one of the periods of the array one can control the directionality of the emitted light without sacrificing the high Q associated with the BIC mode, thus achieving directional lasing. A quality factor Q = 2750 is achieved at a controlled angle of emission of ~ 3 degrees with respect to the normal of the array with a pumping fluence as low as 10 uJ/cm^2. We demonstrate the possibility to control the lasing directivity and wavelength by changing the geometrical parameters of the nanoantenna array, and by tuning the gain spectrum of GaAs with temperature. Lasing action is demonstrated at different wavelengths and emission at different angles, which can be as large as 25 degrees to the normal. The obtained results provide guidelines for achieving surface emitting laser devices based on active dielectric nanoantennas that are compact and highly transparent.

Full Stokes imaging polarimetry using dielectric metasurfaces

Abstract: Polarization is a degree of freedom of light carrying important information that is usually absent in intensity and spectral content. Imaging polarimetry is the process of determining the polarization state of light, either partially or fully, over an extended scene. It has found several applications in various fields, from remote sensing to biology. Among different devices for imaging polarimetry, division of focal plane polarization cameras (DoFP-PCs) are more compact, less complicated, and less expensive. In general, DoFP-PCs are based on an array of polarization filters in the focal plane. Here we demonstrate a new principle and design for DoFP-PCs based on dielectric metasurfaces with the ability to control polarization and phase. Instead of polarization filtering, the method is based on splitting and focusing light in three different polarization bases. Therefore, it enables full Stokes characterization of the state of polarization and overcomes the 50% theoretical efficiency limit of the polarizati...

PVDF-based dielectric polymers and their applications in electronic materials

Abstract: The attractive dielectric poly(vinylidene fluoride) (PVDF) and its copolymers are well confirmed possessing the highest electroactive response including dielectric constant, piezoelectric and ferroelectric effects, which have increasingly wide range of applications such as in energy transfer, energy generation and storage, monitoring and control, and include the development of capacitors, sensors, actuators and so on. In this study, by clarifying the reliability of dielectric performances on their crystal phase structure of various PVDF polymers, the different physical and chemical fabricating ways to achieve different forms of PVDF samples such as linear polymers, ferroelectrics, and relaxor ferroelectrics were identified and quantified. In addition, many recent advances in the PVDF-based polymer dielectrics and some developed applications of these polymers are presented, which gives a reference in academic and engineering area to select an appropriate PVDF series dielectric polymer.