Topic
Dielectric loss
About: Dielectric loss is a research topic. Over the lifetime, 20296 publications have been published within this topic receiving 349254 citations.
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TL;DR: Li2O-MoO3-B2O3 glasses with different concentrations of CuO (ranging from 0 to 12 ǫ) were prepared by X-ray diffraction, scanning electron microscopy and differential scanning calorimetry Optical absorption, luminescence, ESR, IR and dielectric properties have been investigated as mentioned in this paper.
114 citations
TL;DR: In this paper, the authors have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures using a microwave ring resonator and a flip-chip technique.
Abstract: We have grown epitaxial strontium titanate films on lanthanum aluminate substrates at a range of oxygen pressures and substrate temperatures. The complex dielectric function was measured as a function of temperature and electric field bias using a microwave ring resonator and a flip-chip technique. The films having the highest dielectric constant were grown with an oxygen pressure of 600 mTorr and showed large grains in the plane of the film. The small-signal dielectric constant of these films could be changed by a factor of 4 by applying an electric field. The films with the highest dielectric constant showed increased losses, but an improved figure of merit for application to tunable circuits.
114 citations
TL;DR: In this paper , a magnetic ferrite CuFe2O4/MoS2 composite was constructed to achieve a wide effective absorption bandwidth (EAB) of 8.16 GHz (9.84 GHz −18 GHz) at 2.3 mm, when the optimum reflection loss is −40.33 dB.
113 citations
TL;DR: In this paper, the loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single photon is stored, and analyzed with an independent two-level system defect model.
Abstract: The loss of amorphous hydrogenated silicon nitride (a-SiNx:H) is measured at 30 mK and 5 GHz using a superconducting LC resonator down to energies where a single-photon is stored, and analyzed with an independent two-level system defect model. Each a-SiNx:H film was deposited with different concentrations of hydrogen impurities. We find that quantum-regime dielectric loss tangent tan δ0 in a-SiNx:H is strongly correlated with N–H impurities, including NH2. By slightly reducing x we are able to reduce tan δ0 by approximately a factor of 50, where the best films show tan δ0≃3×10−5.
113 citations
TL;DR: In this paper, a chemical co-precipitation method was used to synthesize strontium hexaferrite doped with Zr-Zn to obtain a suitable signal to noise ratio for application in the magnetic recording media.
113 citations