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Dielectric loss

About: Dielectric loss is a research topic. Over the lifetime, 20296 publications have been published within this topic receiving 349254 citations.


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TL;DR: In this article, a general comparison of the two most commonly used techniques for measurement of complex permittivity at microwave frequencies: transmission/reflection and resonance is provided, together with experimental results, which illustrate the advantages and disadvantages of the various techniques and provide guidance on which techniques to use under particular circumstances.
Abstract: This review provides a general comparison of the two most commonly used techniques for measurement of complex permittivity at microwave frequencies: transmission/reflection and resonance. The transmission/reflectance techniques are analyzed using distributed and lumped impedance models. The resonance techniques are analyzed using both dielectric and cavity resonance models. The analysis, combined with experimental results, enables us to illustrate the advantages and disadvantages of the various techniques and provide guidance on which techniques to use under particular circumstances. In general, transmission/reflection techniques can be used over a broad band of frequencies, and are suitable for loss measurements on high loss materials. Resonance techniques do not have swept frequency capability, but have higher accuracy for measurement of the real part of permittivity and can measure the loss tangent of low loss materials with high resolution.

102 citations

Journal ArticleDOI
TL;DR: In this paper, compositional layers of BaxSr1−xTiO3 (Ba0.60Sr0.90Sr 0.40TiO 3 ) were fabricated on Pt coated high resistivity Si substrates via the metal organic solution deposition technique (MOSD).
Abstract: Compositionally layered BaxSr1−xTiO3 (Ba0.60Sr0.40TiO3–Ba0.75Sr0.25TiO3–Ba0.90Sr0.10TiO3) 220nm thin film heterostructures were fabricated on Pt coated high resistivity Si substrates via the metal organic solution deposition technique (MOSD). Optimization of the material design was achieved by evaluating two integration schemes, namely, the single- and multianneal process protocols. Materials characterization demonstrated that both film process protocols resulted in smooth, dense, crack-free films with a single phase perovskite structure. Rutherford backscattering spectroscopy revealed compositionally distinct layers and severe elemental interdiffusion for the films fabricated via the multianneal and single-anneal process protocols, respectively. The retention of the compositional layering subsequent to film crystallization deemed the multianneal processed BaxSr1−xTiO3 (BST) film suitable for evaluation of dielectric properties. The dielectric properties were compared to both paraelectric uniform composit...

102 citations

Journal ArticleDOI
TL;DR: In this paper, the microwave cavity technique was used to study high-frequency dielectric properties of A5B4O15 (A=Ba, Sr, Mg, Zn, Ca, B=Nb, Ta) ceramics.
Abstract: High-frequency dielectric properties of A5B4O15 (A=Ba, Sr, Mg, Zn, Ca; B=Nb, Ta) dielectric ceramics are studied by means of the microwave cavity technique, a combination of far-infrared reflection and transmission spectroscopy and time-resolved terahertz transmission spectroscopy Microwave permittivity e′ and Q×f factor vary, depending on the chemical composition, between 11 and 51, and 24 and 88 THz, respectively The temperature coefficient τf varies between −73 and 232 ppm/°C, and in two samples |τf| is less than 15 ppm/°C It is shown that the microwave permittivity e′ of the ceramics studied is determined by the polar phonon contributions and that linear extrapolation of the submillimeter dielectric loss e″ down to the microwave region is in agreement with the microwave data of single phase samples The relationship among phonon spectra, the crystal structure, and the unit cell volume is discussed

101 citations

Journal ArticleDOI
TL;DR: In this paper, the microstructures and ferroelectric properties of MnO2-doped bismuth-layered (Ca,Sr)Bi4Ti4O15 (CSBTM) ceramics were studied.
Abstract: We have studied the microstructures and ferroelectric properties of MnO2-doped bismuth-layered (Ca,Sr)Bi4Ti4O15 (CSBTM) The piezoelectric coefficient, dielectric loss, mechanical quality factor, and the P-E hysteresis loop measurements indicate that Mn ions entered both the A and B sites of the pseudoperovskite-layered structure, creating “soft” and “hard” doping effects simultaneously Scanning electron microscopy and energy dispersion spectroscopy showed that the platelike grains in CSBTM ceramics become larger with the increase of MnO2 additive, and Mn ions are found inside the grains as well as in the grain boundaries The lattice parameter, room-temperature dielectric constant, and the Curie temperature do not vary with MnO2 additive We conclude that the Mn3+ ions play a critical role in the effects of soft and hard behaviors since it can enter both the A and B sites of the perovskite structure

101 citations

Journal ArticleDOI
Chenggang Hu1, Xiong Li1, Qin Feng1, Xu’Nan Chen1, Xiangang Luo1 
TL;DR: A metamaterial consisting of cut-wire structures which shows near-perfect absorption at microwave frequencies is reported, and the analysis of the spectra and retrieved electromagnetic parameters demonstrate that the mismatch is attributed to the considerable influence of the dielectric loss on the strength of the electric and magnetic resonances.
Abstract: The authors report a metamaterial (MM) consisting of cut-wire structures which shows near-perfect absorption at microwave frequencies. Experimental results show slight lower performance than simulation. The analysis of the spectra and retrieved electromagnetic parameters demonstrate that the mismatch is attributed to the considerable influence of the dielectric loss on the strength of the electric and magnetic resonances, which largely determines the ability of the MM absorber. Such dependence on dielectric loss provides an important clue for the design of MM absorber aiming at specific applications where high efficiency energy collection in dielectric is needed.

101 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023396
2022863
20211,013
20201,000
20191,097
20181,012