Topic
Dielectric loss
About: Dielectric loss is a research topic. Over the lifetime, 20296 publications have been published within this topic receiving 349254 citations.
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TL;DR: In this article, the effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt∕TiO2∕SiO2 ∕Si substrates by pulsed laser deposition has been reported.
Abstract: The effect of La substitution on the structural and electrical properties of multiferroic BiFeO3 thin films grown on Pt∕TiO2∕SiO2∕Si substrates by pulsed laser deposition has been reported. X-ray diffraction data confirmed the substitutions of La into the Bi site with the elimination of all of the secondary phases. The dielectric constant of the films was systematically increased from 165 to ∼350 and the films showed excellent dielectric loss behavior. We observed a gradual increase in the remnant polarization (2Pr) with lanthanum substitution obtaining a maximum value of ∼42μC∕cm2 at 20mol% La incorporation. The leakage current behavior at room temperature of the films was studied and it was found that the leakage current decreased from 10−4to10−7A∕cm2 for La-substituted films at a field strength of 50kV∕cm. The reduction of dc leakage current of La-substituted films is explained on the basis of relative phase stability and improved microstructure of the material.
85 citations
TL;DR: In this article, Europium doped ZnO nanorods were successfully synthesized using low cost wet-chemical precipitation method using powder X-ray diffraction (XRD) study.
85 citations
TL;DR: In this article, the nominal compositions of CaCu3−xLa2x∕3Ti4O12 were prepared by the conventional solid-state reaction technique and the results indicated that they are a very promising class of high-permittivity materials for practical applications.
Abstract: Ceramics with the nominal compositions of CaCu3−xLa2x∕3Ti4O12 were prepared by the conventional solid-state reaction technique. It was found that these ceramics have the properties of rather high dielectric permittivity and sufficiently low dielectric loss. In particular, CaCu2.9La0.2∕3Ti4O12 ceramics sintered at 1050°C for 20h showed the high dielectric permittivity of 7500 with weak frequency dependence below 1MHz, the low dielectric loss less than 0.05 in the wide frequency range of 120Hz–200kHz (with the minimum 0.012 at 20kHz), and the small temperature coefficient about ±15ppm∕°C between −80 and 125°C. From the analysis, it was suggested that CaTiO3 secondary phase due to Cu deficiency and La doping plays the important roles in the observed excellent dielectric properties in CaCu3−xLa2x∕3Ti4O12 ceramics. The results indicated that they are a very promising class of high-permittivity materials for practical applications.
85 citations
TL;DR: In this article, an attempt was made to study the relaxation characteristics of PVA/V2O5 samples and the permittivity and dielectric loss were determined as a function of vanadium pentoxide concentration.
Abstract: Polymers containing metal oxides of nanoscale dimensions have attracted attention because of their unique properties and new findings concerning technological applications. Polymers containing vanadium pentoxide (V2O5) have attracted our interest in respect of their potential applications in memory and switching devices. Poly(vinyl alcohol) (PVA) containing different concentrations of V2O5 ranging from 0 to 0.5 wt% were prepared. The synthesized PVA/V2O5 composites were cast as self-standing flexible films. The composites were characterized using X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. An attempt was made to study the relaxation characteristics of PVA/V2O5 samples. The permittivity and dielectric loss were determined as a function of V2O5 concentration. The results show that the optimum concentration is 0.3 wt%. The electrical conductivity and dielectric modulus in the temperature range 303–433 K at various frequencies (10–100 kHz) for the optimum concentration were investigated. XRD and FTIR results show that the addition of V2O5 reduces the crystallinity of PVA due to the interaction of vanadium ions with the OH groups of PVA. The application of the dielectric modulus formulism gives a simple method for evaluating the activation energy of the dielectric relaxation. The frequency dependence of the electrical conductivity follows the Jonscher universal dynamic law. The conductivity in the direct regime is described by the small polaron model. The electrical conductivity and dielectric properties show that Hunt's model is well adapted to PVA/V2O5 films. Copyright © 2010 Society of Chemical Industry
85 citations
TL;DR: In this article, the effect of Co on the dielectric properties of Li0.50Fe2.50O4 ceramics was investigated. But the authors focused on developing magneto-dielectric materials with matching permeability and permittivity.
85 citations