Dielectric loss

About: Dielectric loss is a research topic. Over the lifetime, 20296 publications have been published within this topic receiving 349254 citations.

Study of room temperature magnetoelectric coupling in Ti substituted bismuth ferrite system

Abstract: Dielectric, magnetic, and magnetoelectric properties of Ti substituted bismuth ferrite (BiFeO3) ceramic synthesized by solid state reaction are reported. Ti substitution for Fe in BiFeO3 increased the room temperature electrical resistivity by approximately six orders of magnitude and also increased the dielectric constant and reduced the loss tangent. The remanent polarization, coercive field, and maximum polarization were 0.081μC∕cm2, 2.571kV∕cm, and 0.658μC∕cm2, respectively at 20kV∕cm. An anomaly in the dielectric constant and loss tangent around Neel temperature was observed. The ferroelectric and magnetic hysteresis loops were measured which are not really saturated in BiFe0.75Ti0.25O3 compound and represented a partial reversal. The magnetoelectric coupling between electric dipoles and magnetic dipoles at room temperature was demonstrated by measuring the effect of magnetic poling on ferroelectric hysteresis loop and the change in the dielectric constant with the external magnetic field.

Enhanced dielectric properties of BaTiO3/poly(vinylidene fluoride) nanocomposites for energy storage applications

Abstract: In this work, homogeneous ceramics-polymer nanocomposites consisting of surface treated BaTiO3 (BT) particles as fillers and poly(vinylidene fluoride) polymer as matrix have been prepared using a solution casting process. The nanocomposites exhibit enhanced dielectric permittivity and reduced loss tangent. The frequency and temperature dependencies of the dielectric permittivity and loss tangent of the nanocomposites suggest that the introduced BT phase and interface areas contribute to the improvement of the dielectric responses. Meanwhile, the X-ray diffraction patterns and Differential Scanning Calorimetry (DSC) curves indicate that the incorporation of ceramic particles contributes to the decrease of the crystallite size, the increase of the crystallinity, and the shift of the crystallization temperature of the polymer matrix. Furthermore, the dielectric displacement and energy density of the nanocomposites are significantly enhanced and an energy density of 3.54 J/cm3 was obtained under an electric field of 200 MV/m with the BT concentration of 20 vol. %. The results indicate that the introduced ceramic fillers and interface areas have positive influences on the structure of the polymer matrix and contribute to the enhancement of the dielectric responses and energy storage properties of the nanocomposites.

Dielectric relaxation in poly(ethylene terephthalate)

Abstract: Mesure de la constante dielectrique et de la perte dielectrique entre 1 et 100 kHz. Mesure du volume massique en fonction de la temperature

Dielectric properties and relaxor behavior of rare-earth (La, Sm, Eu, Dy, Y) substituted barium zirconium titanate ceramics

Abstract: Based on the Ti-vacancy defect compensation model, (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 (Ln=La,Sm,Eu,Dy,Y) ceramics have been fabricated via the conventional solid-state reaction method. The microstructures, dielectric properties, and ferroelectric relaxor behavior of (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 ceramics have been investigated. The results indicate that rare-earth ions with various ionic radii enter the unit cell to substitute for A-site Ba2+ ions and inhibit the grain growth. The typical ferroelectric relaxor behavior is induced due to the rare-earth ions substitution. The diffuseness of the phase transition and the degree of ferroelectric relaxor behavior are enhanced, the TC is remarkably shifted to lower temperature, and the tunability is suppressed with the increase of x value and substituted ionic radius for (Ba1−xLnx)Zr0.2Ti0.8−x∕4O3 (x=0.005–0.04, Ln=La,Sm,Eu,Dy,Y) ceramics. Tunable ferroelectric materials with moderate dielectric constant and low dielectric loss can be obtained by manipulating the doping am...