Dielectric loss

About: Dielectric loss is a research topic. Over the lifetime, 20296 publications have been published within this topic receiving 349254 citations.

Dielectric relaxation, resonance and scaling behaviors in Sr3Co2Fe24O41 hexaferrite.

Abstract: The dielectric properties of Z-type hexaferrite Sr3Co2Fe24O41 (SCFO) have been investigated as a function of temperature from 153 to 503 K between 1 and 2 GHz. The dielectric responses of SCFO are found to be frequency dependent and thermally activated. The relaxation-type dielectric behavior is observed to be dominating in the low frequency region and resonance-type dielectric behavior is found to be dominating above 108 Hz. This frequency dependence of dielectric behavior is explained by the damped harmonic oscillator model with temperature dependent coefficients. The imaginary part of impedance (Z″) and modulus (M″) spectra show that there is a distribution of relaxation times. The scaling behaviors of Z″ and M″ spectra further suggest that the distribution of relaxation times is temperature independent at low frequencies. The dielectric loss spectra at different temperatures have not shown a scaling behavior above 108 Hz. A comparison between the Z″ and the M″ spectra indicates that the short-range charges motion dominates at low temperatures and the long-range charges motion dominates at high temperatures. The above results indicate that the dielectric dispersion mechanism in SCFO is temperature independent at low frequencies and temperature dependent at high frequencies due to the domination of resonance behavior.

Dielectric relaxation and Maxwell-Wagner interface polarization in Nb2O5 doped 0.65BiFeO3–0.35BaTiO3 ceramics

Abstract: Electrical characterizations of Nb2O5 doped 0.65BiFeO3–0.35BaTiO3 (0.65BF–0.35BT) ceramic were carried out over broad temperature and frequency ranges through dielectric spectroscopy, impedance spectroscopy, and ac conductivity measurements. The dielectric constant and loss tangent are drastically reduced with introducing Nb2O5 into the 0.65BF–0.35BT system. Two dielectric anomalies are detected in the temperature regions of 100 °C ≤ T ≤ 280 °C and 350 °C ≤ T ≤ 480 °C, and the Curie temperature (TC) was confirmed in higher temperature region. A dielectric relaxation with large dielectric constants was detected near the TC. This dielectric relaxation becomes even stronger with the gradual increase in the Nb2O5 content. Impedance spectroscopy results clearly show the contributions of grains and grain boundaries in the frequency range of 100 Hz ≤ f ≤ 1 MHz, and the relaxation processes for grains and grain boundaries are non-Debye-type. The grain boundaries are more resistive than that of the grains, revealing the inhomogeneity in samples. The experimental results are well fitted based on a Maxwell-Wagner (MW) interfacial polarization model below 100 kHz, and the MW interfacial polarization effect becomes more and more obvious with the increase in the Nb2O5 content. The increase in dielectric constant is possibly related to space charge polarization, which is caused by charges accumulated at the interface between the grain and grain boundaries. Frequency dependence of the ac conductivity confirms the MW interfacial polarization effect below 100 kHz.

Structural and optical characterization of Cr2O3 nanostructures: Evaluation of its dielectric properties

Abstract: The structural, optical and dielectric properties of as-grown Cr2O3 nanostructures are demonstrated in this paper. Powder X-ray diffractometry analysis confirmed the rhombohedral structure of the material with lattice parameter, a = b = 4.953 A; c = 13.578 A, and average crystallize size (62.40 ± 21.3) nm. FE-SEM image illustrated the mixture of different shapes (disk, particle and rod) of as-grown nanostructures whereas; EDS spectrum confirmed the elemental purity of the material. FTIR spectroscopy, revealed the characteristic peaks of Cr–O bond stretching vibrations. Energy band gap (3.2 eV) of the nanostructures has been determined using the results of UV-VIS-NIR spectrophotometer. The dielectric properties of the material were checked in the wide frequency region (100Hz-30 MHz). In the low frequency region, the matrix of the dielectric behaves like source as well as sink of electrical energy within the relaxation time. Low value of dielectric loss exhibits that the materials posses good optical quality with lesser defects. The ac conductivity of the material in the high frequency region was found according to frequency power law. The physical-mechanism and the theoretical-interpretation of dielectric-properties of Cr2O3 nanostructures attest the potential candidature of the material as an efficient dielectric medium.

High tunability barium strontium titanate thin films for rf circuit applications

Abstract: Large variations in the permittivity of rf magnetron sputtered thin-film barium strontium titanate have been obtained through optimization of growth conditions for maximum dielectric strength and zero-field permittivity in a parallel-plate capacitor structure. Using nominal target compositions of Ba0.5Sr0.5TiO3, and Pt electrodes on c-plane sapphire substrates, adjustment of the O2 partial pressure during deposition was used to vary the excess Ti incorporation into the films, which influenced the low-field permittivity, loss tangent, and dielectric strength. By balancing the benefits of a high permittivity with dielectric strength and loss, we have produced films capable of sustaining short-duration fields greater than 4MV∕cm with over 13:1 (>90%) change in dielectric constant, and greater than 5:1 tunability in bias fields under 1MV∕cm.

Microstructure and dielectric properties of (Nb + In) co-doped rutile TiO2 ceramics

Abstract: The (Nb + In) co-doped TiO2 ceramics recently attracted considerable attention due to their colossal dielectric permittivity (CP) (∼100,000) and low dielectric loss (∼0.05). In this research, the 0.5 mol. % In-only, 0.5 mol. % Nb-only, and 0.5–7 mol. % (Nb + In) co-doped TiO2 ceramics were synthesized by standard conventional solid-state reaction method. Microstructure studies showed that all samples were in pure rutile phase. The Nb and In ions were homogeneously distributed in the grain and grain boundary. Impedance spectroscopy and I-V behavior analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The high conductivity of grain was associated with the reduction of Ti4+ ions to Ti3+ ions, while the migration of oxygen vacancy may account for the conductivity of grain boundary. The effects of annealing treatment and bias filed on electrical properties were investigated for co-doped TiO2 ceramics, where the electric behaviors of samples were found to be susceptible to the annealing treatment and bias field. The internal-barrier-layer-capacitance mechanism was used to explain the CP phenomenon, the effect of annealing treatment and nonlinear I-V behavior for co-doped rutile TiO2 ceramics. Compared with CaCu3Ti4O12 ceramics, the high activation energy of co-doped rutile TiO2 (3.05 eV for grain boundary) was thought to be responsible for the low dielectric loss.