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Dielectric resonator antenna

About: Dielectric resonator antenna is a research topic. Over the lifetime, 8199 publications have been published within this topic receiving 111090 citations. The topic is also known as: DRA.


Papers
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Journal ArticleDOI
TL;DR: In this article, a single parasitic patch for circular polarization excitation of the dielectric resonator antenna (DRA) is investigated, and the integral equations for the conformal-strip and parasitic-patch currents are formulated by matching the appropriate boundary conditions.
Abstract: The use of a single parasitic patch for circular polarization (CP) excitation of the dielectric resonator antenna (DRA) is investigated. For demonstration, the technique is applied to the conformal-strip fed hemispherical DRA, excited at the fundamental TE/sub 111/ mode. Using the Green's function approach, the integral equations for the conformal-strip and parasitic-patch currents are formulated by matching the appropriate boundary conditions. The equations are then solved using the method of moments (MoM). In using the MoM, both the rigorous and simplified current expansions are used for the parasitic patch, and their results are compared with each other. In each case, the impedance integrals are evaluated by virtue of newly obtained recurrence formulas and direct analytical integration. Hence, the results can be calculated very efficiently without the need for any numerical integration, which greatly facilitates the numerical implementation. The input impedance, axial ratio, and radiation patterns of the CP DRA are calculated, and the results are in good agreement with measurements.

106 citations

Journal ArticleDOI
TL;DR: In this paper, a compact size microstrip spiral resonator and its application to a low-phase noise oscillator was presented, where the whole circuit area of the proposed resonator is within 1/10 wavelength, which results in the reduction of circuit area and cost.
Abstract: This letter presents a compact size microstrip spiral resonator and its application to a low phase noise oscillator. This resonator has stopband characteristics to be used in the series feedback oscillator topology. The whole circuit area of the proposed resonator is within 1/10 wavelength, which results in the reduction of the circuit area and cost. A 10-GHz oscillator incorporated with this resonator was designed, fabricated and measured. It shows low phase noise performance of -95.4-dBc/Hz at 100 kHz offset.

105 citations

Patent
15 May 2000
TL;DR: In this article, an acoustic reflector is applied over a thin-film piezoelectric resonator, which is supported on a semiconductor or semiconductor-compatible substrate of a microelectronic device.
Abstract: An acoustic reflector ( 48 ) is applied over a thin-film piezoelectric resonator ( 41, 61 ) which is supported on a semiconductor or semiconductor-compatible substrate ( 42, 62 ) of a microelectronic device ( 40, 60 ), enabling an encapsulant ( 49 ) to be applied over the reflector-covered resonator without acoustically damping the resonator. In one embodiment, alternating high and low acoustic impedance layers ( 51, 53 . . . 55 ) of one-quarter wavelength thicknesses constructively reflect the resonating wavelength to make an encapsulant in the form of an inexpensive plastic molding compound appear as a “clamping” surface to a resonator ( 41 ) peripherally supported over an opening ( 43 ) on a silicon substrate ( 42 ). In another embodiment, an encapsulant- and reflector-covered resonator ( 61 ) is mechanically supported above a second reflector ( 68 ) which eliminates the need for peripheral support, making substrate ( 68 ) also appear as a clamping surface. The invention enables low cost plastic packaging of resonators and associated circuitry on a single monolithic structure. A radio frequency transceiver front-end application is given as an exemplary implementation.

105 citations

Patent
07 Feb 1992
TL;DR: In this article, the authors proposed a tunable integrated resonator (100), which includes a common semiconductor carrier (110), an integrated voltage variable capacitor (104), and a bulk acoustic wave resonator.
Abstract: An integrated tunable resonator (100) includes a common semiconductor carrier (110). Formed on the common semiconductor carrier (110) is an integrated voltage variable capacitor (104). A bulk acoustic wave resonator is formed on the common semiconductor carrier (110) and coupled to the voltage variable capacitor (104). In one aspect of the present invention, a thin film resonator (106) is coupled to the voltage variable capacitor (104) both of which are formed on a common semiconductor substrate (110). The combination of these three elements provide for a tunable integrated resonator (100). In another aspect of the present invention, a surface acoustic wave resonator (522), formed on a common semiconductor carrier (514), is coupled to a voltage variable capacitor (520) in order to provide a tunable resonator (500).

103 citations

Journal ArticleDOI
Anders Derneryd1, A. Lind
TL;DR: In this paper, an extended theory on rectangular microstrip resonator antennas is presented using the cavity model, where radiation from all four edges of the open cavity is taken into account as well as dielectric and ohmic losses.
Abstract: An extended theory on rectangular microstrip resonator antennas is presented using the cavity model. Radiation from all four edges of the open cavity is taken into account as well as dielectric and ohmic losses. For a rectangular microstrip antenna excited in its lowest resonance mode, losses, input conductance, and bandwidth are calculated and plotted versus frequency for some different parameters, showing that bandwidths of up to 15 percent (for a voltage standing-wave ratio (VSWR) of less than two) are possible to achieve in the X band.

103 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023101
2022273
2021181
2020224
2019254
2018247