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Dielectric resonator antenna

About: Dielectric resonator antenna is a research topic. Over the lifetime, 8199 publications have been published within this topic receiving 111090 citations. The topic is also known as: DRA.


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Journal ArticleDOI
TL;DR: In this paper, the effect of an air gap surrounding the feed probe of a cylindrical dielectric resonator (CDR) antenna on its input impedance and resonance frequency was investigated.
Abstract: Results of an experimental study pertaining to the effect of an air gap surrounding the feed probe of a cylindrical dielectric resonator (CDR) antenna on its input impedance and resonance frequency are presented. The antennas under consideration consist of a CDR positioned on a conducting ground plane and fed by a coaxial probe to excite either the TM/sub 01/ or HEM/sub 11/ antenna modes.

85 citations

Journal ArticleDOI
TL;DR: In this article, a high radiation efficiency on-chip antenna is presented in a low-resistivity silicon technology, which consists of a high-permittivity rectangular dielectric resonator excited by an H-slot antenna implemented in a silicon integrated circuit process.
Abstract: A high radiation efficiency on-chip antenna is presented in a low-resistivity silicon technology. The proposed antenna configuration consists of a high-permittivity rectangular dielectric resonator excited by an H-slot antenna implemented in a silicon integrated circuit process. Using the Wheeler method an efficiency of 48% has been measured for the integrated antenna at 35 GHz. The maximum size of this low profile antenna (h = 0.5 mm) is close to λ0/5 (considering the dielectric resonator), and its radiation gain is around 1 dBi at 35 GHz. Moreover, the bandwidth of this antenna is 4.15 GHz (12%). Simulations and measurements show that by removing the passivation layer on top of the H-slot aperture the radiation efficiency increases by 10%.

85 citations

Journal ArticleDOI
TL;DR: In this article, a band-notched planar monopole ultrawideband (UWB) antenna with an open-looped resonator and two tapped lines is proposed.
Abstract: A novel band-notched planar monopole ultrawideband (UWB) antenna is proposed. A notched band, located in the 5 GHz WLAN band, is created using a resonator at the center of a fork-shaped antenna. The resonator is composed of an open-looped resonator and two tapped lines. With the open-looped resonator, the antenna has a good band-notched performance and bandstop-filter-like response in the target band. A parametric study of the notched bandwidth is described that explored the antenna operating mechanism. Then, an equivalent circuit model illustrates the band-notched behaviors more clearly. The antenna input admittance calculated with the equivalent circuit model reasonably agrees with the HFSS simulated result. The proposed antenna also features flat gain frequency responses, small varied group delay and 15 to 35 dB gain suppression at the notched band. Accordingly, the band-notched antenna can effectively select target bands by adjusting these antenna parameters.

85 citations

Journal ArticleDOI
TL;DR: In this paper, a low cost general architecture for a substrate integrated waveguide (SIW) series-fed dielectric resonator antenna (DRA) array, formed by two different slot polarizations, is proposed.
Abstract: A low cost general architecture for a substrate integrated waveguide (SIW) series-fed dielectric resonator antenna (DRA) array, formed by two different slot polarizations, is proposed. In addition, a novel, simple, and generic transmission line (T.L.) circuit model, along with a fast and generic formulation for the new linear array antenna, is developed. The model can be used for reflection coefficient and radiation pattern (gain) calculations. The experimental data from two linear array modules, operating at the millimeter-wave band, are used to verify the simulated results of HFSS and the proposed model results. The measured radiation pattern for a 4 t 1 SIW-DRA array demonstrates a broadside beam with a radiated gain of 11.70 dB over an operating impedance bandwidth of 4.70%. Moreover, the simulated radiation efficiency is more than 90%.

85 citations

Journal ArticleDOI
TL;DR: In this article, a low-cost and high-gain on-chip terahertz (THz) dielectric resonator antenna (DRA) is proposed, which consists of a low loss dielectoric resonator (DR) made of high-resistivity silicon material and an onchip feeding patch realized in a 0.18-μm CMOS technology for exciting the desired electromagnetic (EM) mode.
Abstract: A low-cost and high-gain on-chip terahertz (THz) dielectric resonator antenna (DRA) is proposed in this work. The DRA consists of a low-loss dielectric resonator (DR) made of high-resistivity silicon material and an on-chip feeding patch realized in a 0.18-μm CMOS technology for exciting the desired electromagnetic (EM) mode. The DR can be easily fabricated to the required dimension by wafer dicing of a 2-in silicon wafer. With a 500-μm thick DR, a higher order mode of TE δ, 1 , 7 can be excited, which greatly enhances the antenna gain. Such higher order mode operation also provides a reliable design. If a fundamental mode is selected, the DR thickness is around 100 μm at THz frequencies, which not only requires an additional wafer thinning process, but the wafer is also easily broken during the fabrication process. The feeding patch is used to excite the TE δ, 1 , 7 mode. Moreover, its ground plane also prevents the EM field from leaking into the lossy CMOS silicon substrate, which improves the antenna efficiency. The simulated antenna gain can be 7.9 dBi while providing radiation efficiency of 74% at 341 GHz with 7.3% bandwidth. To characterize the DRA performance, an identical CMOS imager is designed to be integrated with the proposed DRA and an on-chip patch antenna. By comparing the measured responsivity of these two imagers, the gain improvement of the DRA over the on-chip patch antenna can be obtained. Three samples are measured to evaluate the robustness of the proposed antenna over process variation. The measured results show that the maximum gain improvement of 6.7 dB can be acquired at 327 GHz. The proposed DRA with the integrated CMOS imager is also employed to successfully demonstrate a THz transmissive imaging system at 327 GHz. To the best of authors’ knowledge, this is first higher order mode DRA working at THz frequencies.

85 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023101
2022273
2021181
2020224
2019254
2018247