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Diffusion capacitance

About: Diffusion capacitance is a research topic. Over the lifetime, 2427 publications have been published within this topic receiving 33948 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a generalized model for the electronic behavior of deep traps in a p −n junction depletion region is developed for the measurement of junction capacitance transients and photocapacitance.
Abstract: A generalized model is developed for the electronic behavior of deep traps in a p‐n‐junction depletion region. The depletion region is shown to consist of two parts: (i) a space‐charge region which is totally depleted of free carriers and (ii) a transition region which is only partially depleted. The influence of this junction structure on free‐carrier profiling measurements is considered in detail for donor and acceptor traps with both homogeneous and inhomogeneous spatial distributions. Experimental observations of deep‐trap distributions produced by proton bombardment of n‐type silicon are analyzed within the framework of the model. Implications of the model in the measurement of junction capacitance transients and photocapacitance are considered in Appendices A‐C.

303 citations

Journal ArticleDOI
TL;DR: In this paper, a reverse bias is applied to an n −p junction at a sufficiently elevated temperature to give either the donor or the acceptor ions appreciable mobility, the ions will drift in the electric field of the junction to produce an intrinsic semiconductor region between the n and p regions.
Abstract: If a reverse bias is applied to an n‐p junction at a sufficiently elevated temperature to give either the donor or the acceptor ions appreciable mobility, the ions will drift in the electric field of the junction to produce an intrinsic semiconductor region between the n and p regions. Such ion drift offers a simple and straightforward method for investigating diffusion constants, as well as chemical interactions within the host lattice which affect this diffusion. Preliminary results indicate its feasibility for measuring the diffusion constant of Li in Si to as low as 10−18 cm2/sec and also for measuring the effect of Li‐oxygen and Li‐acceptor interactions in decreasing the diffusion rate. Intrinsic regions resulting from ion drift have been used to produce diodes with breakdown in excess of 4000 volts from low resistivity silicon. In addition, they can be used to extend the frequency range of devices by virtue of the decrease in junction capacitance associated with such an incorporated intrinsic region...

243 citations

Journal ArticleDOI
Zheng Chen1, Chunting Chris Mi1, Yuhong Fu1, Jun Xu1, Xianzhi Gong1 
TL;DR: In this paper, a genetic algorithm is employed to estimate the battery model parameters including the diffusion capacitance in real time using measurement of current and voltage of the battery, and the battery SOH can then be determined using the identified diffusion capacitor.

226 citations

Journal ArticleDOI
10 Sep 1999-Science
TL;DR: In this article, a capacitance standard based directly on the definition of capacitance was built, and single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured.
Abstract: A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C, and the resulting voltage change ΔV was measured. Repeated measurements ofC = Ne/ΔV with this method have a relative standard deviation of 0.3 × 10–6. This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.

224 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured the charge on the junction capacitance, which is directly related to the average value of n, as a function of the bias voltage using a Fulton-Dolan electrometer.
Abstract: The circuit formed by a nanoscale tunnel junction in series with a capacitance and a voltage source is the building block of most multi-junction circuits of single electronics. The state of this “single electron box” is entirely determined by the numbern of extra electrons on the intermediate “island” electrode between the junction and the capacitance. We have fabricated such a system and measured the charge on the junction capacitance, which is directly related to the average value ofn, as a function of the bias voltage using a Fulton-Dolan electrometer. At low temperature, the junction charge followed thee-periodic sawtooth function expected from the theory of macroscopic charge quantization. Strikingly,e-periodic variations were also observed when the box was superconducting. The thermal rounding of the sawtooth function is well explained by a simple model, except at the lowest temperatures.

194 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20239
202216
202126
202039
201942
201850