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Diffusion capacitance

About: Diffusion capacitance is a research topic. Over the lifetime, 2427 publications have been published within this topic receiving 33948 citations.


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Journal ArticleDOI
TL;DR: In this paper, a resonant LC-circuit with high sensitivity to small capacitance changes is employed to measure the quantum capacitance in graphene as a function of charge carrier density.
Abstract: We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly proportional to the quantum capacitance, is found to be significantly larger than zero at and around the charge neutrality point. This finding is interpreted to be a result of potential fluctuations with amplitudes of the order of 100 meV in good agreement with scanning single-electron transistor measurements on bulk graphene and transport studies on nanoribbons.

148 citations

Journal ArticleDOI
TL;DR: The experimentally observed frequency dependences of the reverse-biased capacitance of gold-doped silicon step junctions over the frequency range from 10 cps to 30 Mc are found to be in agreement with a simple physical model which takes into account the charge condition and the charging and discharging time constant of the deep-gold acceptor level in the transition region of the junction.
Abstract: The experimentally observed frequency dependences of the reverse-biased capacitance of gold-doped silicon step junctions over the frequency range from 10 cps to 30 Mc are found to be in agreement with a simple physical model which takes into account the charge condition and the charging and discharging time constant of the deep-gold acceptor level in the transition region of the junction. Analysis based on the simple physical model provides explicit theoretical formulas for the junction capacitance at low- and high-frequency limits which show that the high-frequency capacitance under reverse bias is approximately proportional to \sqrt{N_{D} - N_{Au}} and is considerably reduced below the low frequency or dc capacitance if the donors are nearly compensated by the gold. The frequency effect is important for deep energy level impurities and becomes negligible if the impurity level is at or near the band edges. The presence of gold, however, has negligible effect on the avalanche breakdown voltage if N_{Au} .

147 citations

Journal ArticleDOI
16 Feb 1994
TL;DR: In this paper, a 64-kb DRAM with a boost-level generator with body contact structure and reduced body-effect of sense-amplifier transistors is presented.
Abstract: For future ULSI DRAMs beyond the 256 Mb generation, several circuit techniques and memory cell structures have been proposed to meet the requirement of high performance at low voltage. These solutions frequently involve complicated processing steps and/or the ultimate limitations of current Si-MOS devices. DRAM on silicon on insulator (SOI) substrate is a more simple solution to the problem. Thin-film SOI structures with isolation by implanted oxygen (SIMOX) process are under investigation for SRAM and logic. A SOI-DRAM test device with 100 nm thick SOI film has been fabricated in 0.5 /spl mu/m CMOS/SIMOX technology. With this 64 kb SOI-DRAM the bit-line to memory cell capacitance ratio Cb/Cs is reduced by 25% compared with the reference bulk-Si DRAM, because of the decreased junction capacitance. RAS access time tRAC is 70 ns at 2.7 VVcc, as fast as the equivalent bulk-Si device at 4 VVcc. The clock timing in this DRAM is not optimized, so access time should improve with well-tuned clocks. The boosted-level generator with body-contact structure enhances the upper Vcc margin and the reduced body-effect of sense-amplifier transistors improves the lower Vcc margin. The SOI-DRAM has an operating Vcc range from 2.3 V to 4.0 V. >

140 citations

Journal ArticleDOI
17 May 1998
TL;DR: In this paper, a new family of DC-to-DC converters featuring clamping action, PWM modulation and soft-switching in both active and passive switches, is proposed to overcome the limitations of clamped mode DC to DC converters.
Abstract: A new family of DC-to-DC converters featuring clamping action, PWM modulation and soft-switching (ZVS) in both active and passive switches, is proposed to overcome the limitations of clamped mode DC-to-DC converters. The new family of converters is generated and the new circuits are presented. As the resonant circuits absorb all parasitic reactances, including transistor output capacitance and diode junction capacitance, these converters are suitable for high-frequency operation. Principle of operation of the boost converter, theoretical analysis, simulation and experimental results are presented, taken from a laboratory prototype rated at 1600 W, input voltage of 300 V, output voltage of 400 V, and operating at 100 kHz. The measured efficiency at full load was 98%.

136 citations

Journal ArticleDOI
15 Jan 2016
TL;DR: In this paper, a waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz is reported, which is implemented in a fully integrated Si photonics platform on 200mm silicon-on-insulator wafers with 220nm top Si thickness.
Abstract: We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm silicon-on-insulator wafers with 220 nm top Si thickness. Wide open eye diagrams are demonstrated at 1610 nm operation wavelength for nonreturn-to-zero on-off keying (NRZ-OOK) modulation at data rates as high as 56 Gb/s. Dynamic extinction ratios up to 3.3 dB are obtained by applying drive voltages of 2 V peak-to-peak, along with an optical insertion loss below 5.5 dB. The device has a low junction capacitance of just 12.8 fF, resulting in 12.8 fJ/bit of dynamic and ∼1.2 mW of static power consumption in typical operating conditions. Wafer-scale performance data are presented and confirm the manufacturability of the device. The demonstrated modulator shows great potential for realizing high-density and low-power silicon photonic transceivers targeting short-reach optical interconnects at serial data rates of 56 Gb/s and beyond.

133 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20239
202216
202126
202039
201942
201850