Showing papers on "Diode published in 2009"

Switchable ferroelectric diode and photovoltaic effect in BiFeO3.

Abstract: Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as p-n junctions or metal/semiconductor interfaces with Schottky barriers. We report on a diode effect associated with the direction of bulk electric polarization in BiFeO3: a ferroelectric with a small optical gap edge of ∼2.2 electron volts. We found that bulk electric conduction in ferroelectric monodomain BiFeO3 crystals is highly nonlinear and unidirectional. This diode effect switches its direction when the electric polarization is flipped by an external voltage. A substantial visible-light photovoltaic effect is observed in BiFeO3 diode structures. These results should improve understanding of charge conduction mechanisms in leaky ferroelectrics and advance the design of switchable devices combining ferroelectric, electronic, and optical functionalities.

III -nitride photonic-crystal light-emitting diodes with high extraction efficiency

Abstract: Blue light-emitting diodes with a light extraction efficiency of 73% are reported. The InGaN–GaN devices use a photonic-crystal structure for superior optical mode control; their performance has been characterized experimentally and modelled theoretically.

Acoustic diode: rectification of acoustic energy flux in one-dimensional systems.

Abstract: We numerically demonstrate a simple one-dimensional model of an acoustic diode formed by coupling a superlattice with a strongly nonlinear medium. The first numerical observation is presented of a significant rectifying effect on the acoustic energy flux within particular ranges of frequencies. By studying the underlying rectifying mechanism and the parameter dependence of the rectifying efficiency, the effectiveness of the acoustic diode is proved despite its simplicity. We also briefly discuss possible schemes of the experimental realization of this model as well as devising more efficient models.

High-performance crosslinked colloidal quantum-dot light-emitting diodes

Abstract: Colloidal quantum-dot light-emitting diodes have recently received considerable attention due to their ease of colour tunability, high brightness and narrow emission bandwidth. Although there have been rapid advances in luminance, efficiency and lifetime, device performance is still limited by the large energy barriers for hole and electron injection into the quantum-dot layer. Here, we show that by crosslinking the colloidal quantum-dot layer, the charge injection barrier in a red-light-emitting quantum-dot light-emitting diode may be considerably reduced by using a sol–gel TiO2 layer for electron transport. The device architecture is compatible with all-solution device fabrication and the resulting device shows a high luminance (12,380 cd m−2), low turn-on voltage (1.9 V) and high power efficiency (2.41 lm W−1). Incorporation of the technology into a display device with an active matrix drive backplane suggests that the approach has promise for use in high-performance, easy-to-fabricate, large-area displays and illumination sources. Bright, efficient and low-drive-voltage colloidal quantum-dot LEDs that have a crosslinked-polymer quantum-dot layer, and use a sol–gel titanium oxide layer for electron transport, are reported. Integrating the QD-LEDs with a silicon thin-film transistor backplane results in a QD-LED display.

Single-crystalline kinked semiconductor nanowire superstructures

Abstract: The ability to control and modulate the composition1,2,3,4, doping1,3,4,5, crystal structure6,7,8 and morphology9,10 of semiconductor nanowires during the synthesis process has allowed researchers to explore various applications of nanowires11,12,13,14,15. However, despite advances in nanowire synthesis, progress towards the ab initio design and growth of hierarchical nanostructures has been limited. Here, we demonstrate a ‘nanotectonic’ approach that provides iterative control over the nucleation and growth of nanowires, and use it to grow kinked or zigzag nanowires in which the straight sections are separated by triangular joints. Moreover, the lengths of the straight sections can be controlled and the growth direction remains coherent along the nanowire. We also grow dopant-modulated structures in which specific device functions, including p–n diodes and field-effect transistors, can be precisely localized at the kinked junctions in the nanowires. Zigzag nanowires containing field-effect transistors and p–n diodes at the kinks have been made with a new growth technique.

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

Abstract: The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LEDs without an EBL is higher than LEDs with an EBL as injection current density is increased. The improved EQE of LEDs without an EBL at high current density is attributed to the increased hole injection efficiency.

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {2021} GaN Substrates

Abstract: Room-temperature continuous-wave operation of 520 nm InGaN-based green laser diodes on semi-polar {2021} GaN substrates was demonstrated. A threshold current of 95 mA corresponding to a threshold current density of 7.9 kA/cm2 and a threshold voltage of 9.4 V were achieved by improving the quality of epitaxial layers on {2021} GaN substrates using lattice-matched quaternary InAlGaN cladding layers and also by adopting a ridge-waveguide laser structure.

Tuning Transport Properties of Nanofluidic Devices with Local Charge Inversion

Abstract: Nanotubes can selectively conduct ions across membranes to make ionic devices with transport characteristics similar to biological ion channels and semiconductor electron devices. Depending on the surface charge profile of the nanopore, ohmic resistors, rectifiers, and diodes can be made. Here we show that a uniformly charged conical nanopore can have all these transport properties by changing the ion species and their concentrations on each side of the membrane. Moreover, the cation versus anion selectivity of the pores can be changed. We find that polyvalent cations like Ca2+ and the trivalent cobalt sepulchrate produce localized charge inversion to change the effective pore surface charge profile from negative to positive. These effects are reversible so that the transport and selectivity characteristics of ionic devices can be tuned, much as the gate voltage tunes the properties of a semiconductor.

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes

Abstract: We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to engineer the band structure of Ge to enhance the direct gap luminescence efficiency by increasing the injected electron population in the direct Γ valley. Room-temperature EL is observed at the direct gap energy from a Ge/Si p-i-n diode exhibiting the same characteristics of the direct gap photoluminescence of Ge. The integral direct gap EL intensity increases superlinearly with electrical current owing to an indirect valley filling effect. These results indicate a promising future of tensile-strained Ge-on-Si for electrically pumped, monolithically integrated light emitters on Si.

Intermediate-band photovoltaic solar cell based on ZnTe:O

Abstract: Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:O diodes confirm extended spectral response below the bandedge relative to undoped ZnTe diodes, and demonstrate a 100% increase in short circuit current, 15% decrease in open circuit voltage, and overall 50% increase in power conversion efficiency. Subbandgap excitation at 650 and 1550 nm confirms the response via a two-photon process and illustrates the proposed energy conversion mechanism for an intermediate band solar cell.

Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

Abstract: Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists of thin tensile-strained AlGaN barriers surrounding the InGaN QW. The band structure was calculated by using a self-consistent 6-band kmiddotp formalism, taking into account valence band mixing, strain effect, spontaneous and piezoelectric polarizations, as well as the carrier screening effect. The spontaneous emission and gain properties were analyzed for strain-compensated InGaN-AlGaN QW structures with indium contents of 28%, 22%, and 15% for lasers (light-emitting diodes) emitting at 480 (500), 440 (450), and 405 nm (415 nm) spectral regimes, respectively. The spontaneous emission spectra show significant improvement of the radiative emission for strain-compensated QW for all three structures compared to the corresponding conventional InGaN QW, which indicates the enhanced radiative efficiency for light emitting diodes. Our studies show the improvement of the optical gain and reduction of the threshold current density from the use of strain-compensated InGaN-AlGaN QW as active regions for diode lasers.

Measurement of electron overflow in 450 nm InGaN light-emitting diode structures

Abstract: Test structures were developed to experimentally measure the presence of electron overflow in light-emitting diodes (LEDs) under typical bias conditions. These test structures are comprised of a standard LED structure with an extra Mg-doped quantum well inserted on the p-type side of the electron blocking layer. Electrons escaping the active region recombine in the extra quantum well and the corresponding photon emission is observed. No electron overflow was observed at low current densities. At intermediate current densities where efficiency droop occurs, overflow was observed and increased with increasing current density. The onset of electron overflow occurred at slightly lower current densities than the onset of efficiency droop. Auger-assisted overflow, a by-product of the Auger process, is considered in addition to traditional overflow mechanisms.

Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

Abstract: We have succeeded in the growth of europium (Eu)-doped GaN layer grown by organometallic vapor-phase epitaxy (OMVPE) and demonstrated the first low-voltage operation of current-injected red emission from a p-type/Eu-doped/n-type GaN light-emitting diode (LED) at room temperature. The bright red emission was obtained with an applied voltage as low as 3 V under normal lighting conditions. At a dc current of 20 mA, the output power, integrated over the 5D0–7F2 transition in Eu3+ ions (around 621 nm), was 1.3 µW. This result suggests a novel way to realize GaN-based red LEDs and monolithic devices comprising red, green and blue GaN-based LEDs.

A RF to DC Voltage Conversion Model for Multi-Stage Rectifiers in UHF RFID Transponders

Abstract: This paper presents a RF to DC conversion model for multi-stage rectifiers in UHF RFID transponders. An equation relating the RF power available from the antenna to the DC output voltage produced by a multi-stage rectifier is presented. The proposed model includes effects of the nonlinear forward voltage drop in diodes and impedance matching conditions of the antenna to rectifier interface. Fundamental frequency impedance approximation is used to analyze the resistance of rectifying diodes; parasitic resistive loss components are also included in the analysis of rectifier input resistance. The closed form equation shows insights into design parameter tradeoffs, such as power available from the antenna, antenna radiation resistance, the number of diodes, DC load current, parasitic resistive loss components, diode and capacitor sizes, and frequency of operation. Therefore, it enables the optimization of rectifier parameters for impedance matching with a low-cost printed antenna and shunt tuning inductor, in order to improve the RF to DC conversion efficiency and the operational distance of UHF RFID transponders. Three diode doublers and three multistage rectifiers were fabricated in a 130 nm CMOS process with custom no-mask added Schottky diodes. Measurements of the test IC are in good agreement with the proposed model.

Nanofluidic Diodes Based on Nanotube Heterojunctions

Abstract: The mechanism of tuning charge transport in electronic devices has recently been implemented into the nanofluidic field for the active control of ion transport in nanoscale channels/pores. Here we report the first synthesis of longitudinal heterostructured SiO2/Al2O3 nanotubes. The ionic transport through these nanotube heterojunctions exhibits clear current rectification, a signature of ionic diode behavior. Such nanofluidic diodes could find applications in ion separation and energy conversion.

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

Abstract: Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8–2.8 and 2.0–3.5 times, respectively, over those of conventional InGaN QW LED.

Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates

Abstract: We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky–Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

Light-emitting diode display and method for manufacturing the same

Abstract: A method for manufacturing a light-emitting diode display is provided. The method includes pre-fixing first, second, and third light-emitting diodes on a light emitting unit production substrate to produce light-emitting units each including first, second, and third light-emitting diodes, first electrodes of the first, second, and third light-emitting diodes being connected to a sub-common electrode. The method also includes transferring and fixing the light-emitting units from the light-emitting unit production substrate to a display substrate to produce a light-emitting diode display including the light-emitting units which are arranged in a first direction and a second direction perpendicular to the first direction (i.e., arranged in a two-dimensional matrix).

Polarization-induced Zener tunnel junctions in wide-band-gap heterostructures.

Abstract: The large electronic polarization in III-V nitrides allows for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-band-gap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-band-gap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.

Efficient near-infrared polymer and organic light-emitting diodes based on electrophosphorescence from (tetraphenyltetranaphtho[2,3]porphyrin)platinum(II).

Abstract: The new metalloporphyrin Pt(tptnp), where tptnp = tetraphenyltetranaphtho[2,3]porphyrin, has been prepared and subjected to photophysical and electrooptical device studies. In degassed toluene solution at room temperature Pt(tptnp) features efficient phosphorescence emission with λmax 883 nm with a quantum efficiency of 0.22. The complex has been used as the active phosphor in polymer and organic light-emitting diodes. Polymer light-emitting diodes based on a spin-coated emissive layer consisting of a blend of Pt(tptnp) doped in poly(9-vinylcarbazole) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole exhibit near-IR emission with λmax 896 nm, with a maximum external quantum efficiency (EQE) of 0.4% and a maximum radiant emittance of 100 μW/cm2. Organic light-emitting diodes prepared via vapor deposition of all layers and that feature an optimized multilayer hole injection and electron blocking layer heterostructure with an emissive layer consisting of 4,4′-bis(carbazol-9-yl)biphenyl (CBP) doped...

Nonvolatile memory cell comprising a reduced height vertical diode

Abstract: A nonvolatile memory cell according to the present invention comprises a bottom conductor, a semiconductor pillar, and a top conductor. The semiconductor pillar comprises a junction diode, including a bottom heavily doped region, a middle intrinsic or lightly doped region, and a top heavily doped region, wherein the conductivity types of the top and bottom heavily doped region are opposite. The junction diode is vertically oriented and is of reduced height, between about 500 angstroms and about 3500 angstroms. A monolithic three dimensional memory array of such cells can be formed comprising multiple memory levels, the levels monolithically formed above one another.

Deposited silicon high-speed integrated electro-optic modulator.

Abstract: We demonstrate a micrometer-scale electro-optic modulator operating at 2.5 Gbps and 10 dB extinction ratio that is fabricated entirely from deposited silicon. The polycrystalline silicon material exhibits properties that simultaneously enable high quality factor optical resonators and sub-nanosecond electrical carrier injection. We use an embedded p+n-n+ diode to achieve optical modulation using the free carrier plasma dispersion effect. Active optical devices in a deposited microelectronic material can break the dependence on the traditional single layer silicon-on-insulator platform and help lead to monolithic large-scale integration of photonic networks on a microprocessor chip.

Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method

Abstract: A memory device includes a diode driver and a data storage element, such as an element comprising phase change memory material, and in which the diode driver comprises a silicide element on a silicon substrate with a single crystal silicon node on the silicide element. The silicide element separates the single crystal silicon node from the underlying silicon substrate, preventing the flow of carriers from the single crystal silicon node into the substrate, and is capable of acting as a conductive element for interconnecting devices on the device. The single crystal silicon node acts as one terminal of a diode, and a second semiconductor node is formed on top of it, acting as the other terminal of the diode.

Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

Abstract: We fabricated p-i-n diodes by sputtering alternating layers of silicon dioxide and silicon rich oxide with a nominal atomic ratio O/Si=0.7 onto quartz substrates with in situ boron for p-type and phosphorus for n-type doping. After crystallization, dark and illuminated I-V characteristics show a diode behavior with an open circuit voltage of 373 mV. Due to the thinness of the layers and their corresponding high resistivity, lateral current flow results in severe current crowding. This effect is taken into account when extracting the electronic bandgap based on temperature dependent diode I-V measurements.

Electrical Characterization of Organic Electronic Materials and Devices

Abstract: Preface. 1 General concepts . 1.1 Introduction. 1.2 Conduction mechanism. 1.3 Chemistry and the energy diagram. 1.4 Disordered materials and the Meyer-Neldel Rule. 1.5 Devices. 1.6 Optoelectronics/photovoltaics. 2 Two-terminal devices: DC current . 2.1 Conductance. 2.2 DC current of a Schottky barrier. 2.3 DC measurements. 3 Two-terminal devices: Admittance spectroscopy . 3.1 Admittance spectroscopy. 3.2 Geometrical capacitance. 3.3 Equivalent circuits. 3.4 Resistor SCLC. 3.5 Schottky diodes. 3.6 MIS diodes. 3.7 MIS tunnel diode. 3.8 Noise measurements. 4 Two-terminal devices: Transient techniques . 4.1 Kinetics: Emission and capture of carriers. 4.2 Current transient spectroscopy. 4.3 Thermally stimulated current. 4.4 Capacitance transient spectroscopy. 4.5 Deep-level transient spectroscopy. 4.6 Q-DLTS. 5 Time-of-flight . 5.1 Introduction. 5.2 Drift transient. 5.3 Diffusive transient. 5.4 Violating einstein's relation. 5.5 Multi-trap-and-release. 5.6 Anomalous transients. 5.7 High current (space charge) transients. 5.8 Summary of the ToF technique. 6 Thin-film transistors . 6.1 Field-effect transistors. 6.2 MOS-FET. 6.3 Introducing TFTs. 6.4 Basic model. 6.5 Justification for the two-dimensional approach. 6.6 Ambipolar materials and devices. 6.7 Contact effects and other simple nonidealities. 6.8 Metallic contacts in TFTs. 6.9 Normally-on TFTs. 6.10 Effects of traps. 6.11 Admittance spectroscopy for the determination of the mobility in TFTs. 6.12 Summary of TFT measurements. 6.13 Diffusion transistor. Appendix A A Derivation of Equations (2.21), (2.25), (6.95) and (6.101) . Bibliography . Index.

InGaN laser diodes with 50 mW output power emitting at 515 nm

Abstract: We demonstrate direct green laser operation from InGaN based diodes at wavelengths as long as 515.9 nm with 50 mW output power in pulse operation. A factor of ∼10 defect reduction for the In-rich InGaN quantum wells based on improvements of the epitaxial growth process and design of the active layers on c-plane GaN-substrates makes it possible to demonstrate laser operation at room temperature. Micrometer-scale photoluminescence mappings and electro-optical measurements confirm the reduction of nonradiative defects in the emitting layers. The 11 μm broad-area gain-guided laser structures were driven in pulse operation to minimize thermal effects and to accurately measure the laser temperature dependence. The threshold current density was ∼9 kA/cm2 and the fitted slope efficiency had a value of ∼130 mW/A for an optical output up to 50 mW.

Ionic Circuits Based on Polyelectrolyte Diodes on a Microchip

Abstract: Green means go: A polyelectrolyte diode on a microchip exhibits well-defined nonlinear rectifying behavior. This system visualizes the dynamic distribution of ions in a charged polymer phase under an electric field on a real-time basis using fluorescence images (see picture). Multiple polyelectrolyte diodes are integrated on a microchip to produce a variety of logic gates based on ionic circuits.