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Diode
About: Diode is a research topic. Over the lifetime, 71552 publications have been published within this topic receiving 812496 citations.
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TL;DR: In this article, a new family of processible poly(cyanoterephthalylidene)s was used for electron injection and hole injection in poly(p-phenylene vinylene) (PPV) diodes.
Abstract: CONJUGATED polymers have been incorporated as active materials into several kinds of electronic device, such as diodes, transistors1 and light-emitting diodes2. The first polymer light-emitting diodes were based on poly(p-phenylene vinylene) (PPV), which is robust and has a readily processible precursor polymer. Electroluminescence in this material is achieved by injection of electrons into the conduction band and holes into the valence band, which capture one another with emission of visible radiation. Efficient injection of electrons has previously required the use of metal electrodes with low work functions, primarily calcium; but this reactive metal presents problems for device stability. Here we report the fabrication of electroluminescent devices using a new family of processible poly(cyanoterephthalylidene)s. As the lowest unoccupied orbitals of these polymers (from which the conduction band is formed) lie at lower energies than those of PPV, electrodes made from stable metals such as aluminium can be used for electron injection. For hole injection, we use indium tin oxide coated with a PPV layer; this helps to localize charge at the interface between the PPV and the new polymer, increasing the efficiency of recombination. In this way, we are able to achieve high internal efficiencies (photons emitted per electrons injected) of up to 4% in these devices.
1,593 citations
TL;DR: Bergh and P.J.Dean as discussed by the authors proposed a light-emitting diode (LEDD) for light-aware Diodes, which was shown to have promising performance.
Abstract: Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.
1,560 citations
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Abstract: A theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film. A generalized approach is taken towards the interface states which considers their communication with both the metal and the semiconductor. Diodes were fabricated with interfacial films ranging from 8 to 26 A in thickness, and their characteristics are related to this model. The effects of reduced transmission coefficients together with fixed charge in the film are investigated. The interpretation of the current-voltage characteristics and the validity of the C−2-V method in the determination of diffusion potentials are discussed.
1,519 citations
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.
1,439 citations
TL;DR: In this article, it was shown that the characteristics of light-emitting diodes based upon MEH-PPV are determined by tunneling both the holes and the electrons through interface barriers caused by the band offset between the polymer and the electrodes.
Abstract: In this paper it is demonstrated that the characteristics of light‐emitting diodes based upon MEH‐PPV [more fully known as poly(2‐methoxy,5‐(2’‐ethyl‐hexoxy)‐1,4‐phenylene‐ vinylene)] are determined by tunneling of both the holes and the electrons through interface barriers caused by the band offset between the polymer and the electrodes. It is shown that manipulating these offsets can control the useful operating voltage of the device as well as its efficiency. A model is developed that clearly explains the device characteristics of a wide range of diodes based upon MEH‐PPV. The turn‐on voltage for an ideal device is shown to be equal to the band gap, i.e., 2.1 eV for MEH‐PPV, and is slightly lower at 1.8 eV for an indium‐tin oxide/MEH‐PPV/Ca device. If there is a significant difference in the barrier height, the smaller of the two barriers controls the I–V characteristics, while the larger barrier determines the device efficiency. In indium‐tin‐oxide/MEH‐PPV/Ca devices, the barrier to hole injection is ...
1,435 citations