Dopant

Abstract: A systematic study of metal ion doping in quantum (Q)-sized (2-4 nm) TiO_2 colloids is performed by measuring their photoreactivities and the transient charge carrier recombination dynamics. The presence of metal ion dopants in the TiO_2 crystalline matrix significantly influences photoreactivity, charge carrier recombination rates, and interfacial electron-transfer rates. The photoreactivities of 21 metal ion-doped colloids are quantified in terms of both the conduction band electron reduction of an electron acceptor (CCl_4 dechlorination) and the valence band hole oxidation of an electron donor (CHCl_3 degradation). Doping with Fe^(3+), Mo^(5+), Ru^(3+), Os^(3+), Re^(5+), V^(4+), and Rh^(3+) at 0.1-0.5 at.% significantly increases the photoreactivity for both oxidation and reduction while Co^(3+) and Al^(3+) doping decreases the photoreactivity. The transient absorption signals upon laser flash photolysis (λ_(ex) = 355 nm) at λ = 600 nm are extended up to 50 ms for Fe^(3+)-, V^(4+)-, Mo^(5+)-, and Ru^(3+)-doped TiO_2 while the undoped Q-sized TiO_2 shows a complete "blue electron" signal decay within 200 μs. Co^(3+)- and Al^(3+)-doped TiO_2 are characterized by rapid signal decays with a complete loss of absorption signals within 5 μs. The quantum yields obtained during CW photolyses are quantitatively correlated with the measured transient absorption signals of the charge carriers. Photoreactivities are shown to increase with the relative concentration of trapped charge carriers. The photoreactivity of doped TiO_2 appears to be a complex function of the dopant concentration, the energy level of dopants within the TiO_2 lattice, their d electronic configuration, the distribution of dopants, the electron donor concentration, and the light intensity.

Abstract: The recent discovery of graphene has led to many advances in two-dimensional physics and devices. The graphene devices fabricated so far have relied on $SiO_2$ back gating. Electrochemical top gating is widely used for polymer transistors, and has also been successfully applied to carbon nanotubes. Here we demonstrate a top-gated graphene transistor that is able to reach doping levels of up to $5\times 10^{13} cm^{-2}$, which is much higher than those previously reported. Such high doping levels are possible because the nanometre-thick Debye layer in the solid polymer electrolyte gate provides a much higher gate capacitance than the commonly used $SiO_2$ back gate, which is usually about 300 nm thick. In situ Raman measurements monitor the doping. The G peak stiffens and sharpens for both electron and hole doping, but the 2D peak shows a different response to holes and electrons. The ratio of the intensities of the G and 2D peaks shows a strong dependence on doping, making it a sensitive parameter to monitor the doping.

Abstract: Electroluminescent (EL)devices are constructed using multilayer organic thin films. The basic structure consists of a hole‐transport layer and a luminescent layer. The hole‐transport layer is an amorphous diamine film in which the only mobile carrier is the hole. The luminescent layer consists of a host material, 8‐hydroxyquinoline aluminum (Alq), which predominantly transports electrons. High radiance has been achieved at an operating voltage of less than 10 V. By doping the Alq layer with highly fluorescent molecules, the EL efficiency has been improved by about a factor of 2 in comparison with the undoped cell. Representative dopants are coumarins and DCMs. The ELquantum efficiency of the doped system is about 2.5%, photon/electron. The EL colors can be readily tuned from the blue‐green to orange‐red by a suitable choice of dopants as well as by changing the concentration of the dopant. In the doped system the electron‐hole recombination and emission zones can be confined to about 50 A near the hole‐transport interface. In the undoped Alq, the EL emission zone is considerably larger due to excitondiffusion. The multilayerdopedEL structure offers a simple means for the direct determination of excitondiffusion length.

Abstract: Doped polyacetylene forms a new class of conducting polymers in which the electrical conductivity can be systematically and continuously varied over a range of eleven orders of magnitude. Transport studies and far-infrared transmission measurements imply a metal-to-insulator transition at dopant concentrations near 1%.

Abstract: Doping is a widely applied technological process in materials science that involves incorporating atoms or ions of appropriate elements into host lattices to yield hybrid materials with desirable properties and functions. For nanocrystalline materials, doping is of fundamental importance in stabilizing a specific crystallographic phase, modifying electronic properties, modulating magnetism as well as tuning emission properties. Here we describe a material system in which doping influences the growth process to give simultaneous control over the crystallographic phase, size and optical emission properties of the resulting nanocrystals. We show that NaYF(4) nanocrystals can be rationally tuned in size (down to ten nanometres), phase (cubic or hexagonal) and upconversion emission colour (green to blue) through use of trivalent lanthanide dopant ions introduced at precisely defined concentrations. We use first-principles calculations to confirm that the influence of lanthanide doping on crystal phase and size arises from a strong dependence on the size and dipole polarizability of the substitutional dopant ion. Our results suggest that the doping-induced structural and size transition, demonstrated here in NaYF(4) upconversion nanocrystals, could be extended to other lanthanide-doped nanocrystal systems for applications ranging from luminescent biological labels to volumetric three-dimensional displays.