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Dopant Activation

About: Dopant Activation is a research topic. Over the lifetime, 969 publications have been published within this topic receiving 10994 citations.


Papers
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Book ChapterDOI
01 Jan 1986
TL;DR: In this article, Implanted dopant activation and diffusion in silicon is discussed. And 54 papers are grouped under the headings of Implant activation in silicon; Defects and microstructure; Equipment and device applications; Silicides and oxides; and Compound semiconductors
Abstract: These proceedings contain 54 papers grouped under the headings of: Implanted dopant activation and diffusion in silicon; Defects and microstructure; Equipment and device applications; Silicides and oxides; and Compound semiconductors

173 citations

Patent
13 Nov 2006
TL;DR: In this article, a heat treatment system for semiconductor devices is described, in which the heat treatment process is used to transfer a semiconductor device after uniformly preheating the device in order to prevent deformation of the device during heat treatment.
Abstract: Disclosed is a heat treatment system for semiconductor devices. The heat treatment system is used in a heat treatment process for semiconductor devices, such as a crystallization process for an amorphous silicon thin film or a dopant activation process for a poly-crystalline silicon thin film formed on a surface of a glass substrate of a flat display panel including a liquid crystal display (LCD) or an organic light emitting device (OLED). The heat treatment system transfers a semiconductor device after uniformly preheating the semiconductor device in order to prevent deformation of the semiconductor device during the heat treatment process, rapidly performs the heat treatment process under the high temperature condition by heating the semiconductor device using a lamp heater and induction heat derived from induced electromotive force, and unloads the semiconductor device after uniformly cooling the semiconductor device such that the semiconductor device is prevented from being deformed when the heat treatment process has been finished. The heat treatment system rapidly performs the heat treatment process while preventing deformation of the semiconductor device by gradually heating or cooling the semiconductor device.

159 citations

Patent
Zhi Xu1
08 Oct 2008
TL;DR: In this paper, a semiconductor substrate is implanted with dopants and the substrate is subjected to a cleaning process employing electrically neutral nitrogen and fluorine radicals to produce an oxygen-free surface having dangling bonds.
Abstract: A method and apparatus for forming a semiconductor device. A semiconductor substrate is implanted with dopants. The substrate is subjected to a cleaning process employing electrically neutral nitrogen and fluorine radicals to produce an oxygen-free surface having dangling bonds. Before any further exposure to oxidizing gases, the substrate is annealed by thermal treatment to activate and distribute the dopants. A gate oxide layer is formed over the annealed surface. The apparatus performs all such treatments without breaking vacuum.

151 citations

Journal ArticleDOI
TL;DR: In this paper, the annealing processes are grouped according to the time durations of anneal and with reference to the thermal response time of the silicon, and designated as adiabatic for 10−2 sec.
Abstract: Short time annealing has recently become of interest in silicon processing as a technique to activate ion implanted dopants, remove defects, and regrow amorphized silicon, with minimal diffusion of the dopant atoms. Short time annealing is carried out using a variety of energy sources ranging from arc lamps and resistance heaters with heating times of a few tens of seconds, to laser, electron, and ion sources with heating times of a few milliseconds down to nanoseconds. The annealing processes are grouped according to the time durations of the anneal and with reference to the thermal response time of the silicon. These are designated as adiabatic for 10−2 sec. Processes in the adiabatic regime result in surface melting, regrowth of silicon free of extended defects, and complete dopant activation. However, the dopant diffuses throughout the melt zone. In the thermal flux and isothermal annealing regimes the dopant can be activated, and amorphous silicon regrown epitaxially with little dopant diffusion. In the limited results reported to date, the complete removal of extended defects has not been achieved. Further investigation may yield new results in extended defect removal.

142 citations

Journal ArticleDOI
TL;DR: In this paper, the degradation of high power GaN/InGaN blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and thermal ageing characteristics.
Abstract: The degradation of high power GaN/InGaN blue light-emitting diodes (LEDs) was investigated by considering the electrical, optical and thermal ageing characteristics. The LED samples were stressed at the elevated temperature of 85 °C with an injection current of 350 mA. Changes in the tunnelling current and series resistance for the electrical characteristics and an initial increase followed by a gradual decrease for the optical power were observed. Variations of the thermal resistance in the chip and package were found to be 2 °C W−1 and 0.3 °C W−1, respectively. The responsible factors were proposed to be: (a) the dopant activation and changes of defects in the chip level; (b) the yellowing of the optical lens and structural degradations such as generating voids or delaminations in the package level. The changes in the electrical, optical and thermal characteristics were found to depend on and affect each other. The internal relationship for the characteristics of the three aspects was explained.

133 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20238
202222
202125
202016
201927
201822