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Drain-induced barrier lowering

About: Drain-induced barrier lowering is a research topic. Over the lifetime, 6163 publications have been published within this topic receiving 101547 citations.


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Patent
15 Dec 2010
TL;DR: In this paper, a transistor device is described that includes a source, a gate, a drain, and a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions on either side of the gate, and an isolation region in the gate region.
Abstract: A transistor device is described that includes a source, a gate, a drain, a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions in the semiconductor material on either side of the gate, a channel in the semiconductor material having an effective width in the gate region and in the channel access regions, and an isolation region in the gate region. The isolation region serves to reduce the effective width of the channel in the gate region without substantially reducing the effective width of the channel in the access regions. Alternatively, the isolation region can be configured to collect holes that are generated in the transistor device. The isolation region may simultaneously achieve both of these functions.

36 citations

Patent
Werner Baechtold1, Alexis Baratoff1, P. Guéret1, Christoph Stefan Harder1, Hans Peter Wolf1 
18 Dec 1984
TL;DR: In this paper, a gate for applying control signals is coupled to a semiconductor tunnel channel and the operating temperature of the device is kept sufficiently low to have the tunnel current through the barrier outweigh currents of thermionically excited carriers.
Abstract: The transistor comprises two electrodes, (source (22) and drain (23), with a semiconductor tunnel channel (21A, 21B) arranged therebetween. A gate (24) for applying control signals is coupled to the channel. The semiconductor channel consists of a plurality of regions differing in their current transfer characteristics: contact regions (21c), connected to the source and drain electrodes, and a tunneling region (21t) arranged between the contact regions. The energy of free carriers in the contact regions differs from the energy of the conduction band or the valence band of the tunneling region which forms a low energy tunnel barrier the height (ΔE) of which can be modified by control signals applied to the gate. The operating temperature of the device is kept sufficiently low to have the tunnel current through the barrier outweigh currents of thermionically excited carriers.

36 citations

Patent
09 Jun 2003
TL;DR: In this article, a high shunt regulator provides precise voltage over process, temperature, power supply, and foundries The HV level is settable by a digital control bits such as fuse bits and a filter network filters out the ripple noise and charge transient.
Abstract: A high shunt regulator provides precise voltage over process, temperature, power supply, and foundries The HV level is settable by a digital control bits such as fuse bits A filter network filters out the ripple noise and charge transient A tracking capacitor divider network speeds up response time A fractional band gap reference provides fractional bandgap voltage and current, and operates at low power supply and has superior power supply rejection It is unsusceptible to substrate hot carrier effect It exposes very little to drain induced barrier lowering effect The bandgap core has better than conventional transient response and stability One embodiment has adjustable level control Complementary TC (temperature coefficient) trimming allows efficient realization of zero temperature coefficients of current and voltage Higher order curvature correction of voltage and current is integrated Replica bias for the control loop is presented A Binary and Approximation Complementary TC search trimming is described A zero TC fractional voltage less than the theoretical bandgap voltage (<<˜12 Volt) is realizable The bandgap core has a filtering mechanism to reject high frequency noise A low power startup circuit powers up the bandgap The bandgap also has variable impedance

36 citations

Patent
Timothy S. Beatty1
28 Jul 1999
TL;DR: In this article, a method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device was proposed, where a first source/drain region of a protection transistor was coupled to a gate and a second source/drain region of the protection transistor is coupled to ground.
Abstract: A method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device. A first source/drain region of a protection transistor is coupled to a protected transistor gate. A second source/drain region of the protection transistor is coupled to ground. The protection transistor is then turned on during the processing of the device to ground the protected transistor gate.

36 citations

Patent
21 Oct 2010
TL;DR: In this article, a voltage regulator circuit includes a transistor and a capacitor, and an oxide semiconductor layer is used for a channel formation layer, an off-state current is less than or equal to 10 aA/μm.
Abstract: A voltage regulator circuit includes a transistor and a capacitor. The transistor includes a gate, a source, and a drain, a first signal is inputted to one of the source and the drain, a second signal which is a clock signal is inputted to the gate, an oxide semiconductor layer is used for a channel formation layer, and an off-state current is less than or equal to 10 aA/μm. The capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a high power source voltage and a low power source voltage are alternately applied to the second electrode.

36 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
202279
202161
202055
201958
201845