Drain-induced barrier lowering

About: Drain-induced barrier lowering is a research topic. Over the lifetime, 6163 publications have been published within this topic receiving 101547 citations.

MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions

Abstract: An MOS field effect transistor includes a substrate in which source and drain regions are formed. A thick silicon dioxide layer is selectively formed on the upper surface of the substrate, so that in the resulting structure, the junction depth associated with the source and drain regions is selectively greater at contact locations and at the portions of the source and drain regions that are in contact with the active channel.

Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

Abstract: In this paper, a closed-form current model for bulk tunneling field-effect transistor (TFET) is put forward. Based on the operation mechanism, the channel surface potential ϕ sf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.

Field effect transistor with a high voltage breakdown capacity, and method for its production

Abstract: 1. Field effect transistor with high breakdown voltage in which a source region and a drain region (2, 3) of a first conductivity type are incorporated in a semiconductor body (1) of a second conductivity type, in which a gate (5) separated from the semiconductor body (1) by a thin insulating layer (4) is provided, and in which are source-side connection region (6) and a drain-side connection region (7) are present which belong to the first conductivity type, are situated between the source region (2), the drain region (3) and a zone (Z) of the semiconductor body covered by the gate (5) and have a lower doping concentration and also a substantially lower penetration depth than the source region and the drain region, characterized in that the drain-side connection region (7) has a lower doping concentration than the source-side connection region (6).

Photodetector and method for detecting radiation

Abstract: In a photodetector, a photodiode and a capacitor are coupled between a sensing node and a ground voltage line, and a MOS transistor is coupled between the sensing node and a reference voltage line. Initially, the capacitor is charged so that the sensing node voltage is greater than a transition voltage and a predetermined gate voltage is applied to switch the transistor off. During a sampling time, the capacitor initially discharges through the photodiode, the discharge current being dependent on the intensity of radiation incident on the photodiode, until the sensing node voltage falls to the transition voltage. If the sensing node voltage falls to the transition voltage during the sampling time, the transistor enters its weak inversion operation domain and the current through the photodiode can flow through the transistor such that the sensing node voltage varies logarithmically with the radiation intensity. At the end of the sampling time, a readout circuit coupled to the sensing node generates an output signal dependent on the sensing node voltage, and the photodetector is reset by recharging the capacitor before the start of another sampling time.