Topic
Drain-induced barrier lowering
About: Drain-induced barrier lowering is a research topic. Over the lifetime, 6163 publications have been published within this topic receiving 101547 citations.
Papers published on a yearly basis
Papers
More filters
•
20 Feb 2002
TL;DR: In this paper, a display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device, where a current mirror circuit composed of transistors is placed in each pixel.
Abstract: A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED.
48 citations
•
AT&T1
TL;DR: In this paper, an integrated circuit is disclosed comprising a first field effect transistor having a source connected to a first node and a gate connected to the second node, and a second field-effect transistor for protecting the first transistor from voltages that are greater than a predetermined nominal voltage.
Abstract: An integrated circuit is disclosed comprising a first field effect transistor having a source connected to a first node and a gate connected to a second node, and a second field effect transistor for protecting the first transistor from voltages applied to the first node and greater than a predetermined nominal voltage. The second transistor includes a drain connected to the second node, a source connected to the first node, and a gate connected to a third node. A constant voltage source is coupled to the third node and supplies a gate voltage to the gate of the second transistor such that a drain-source path of the second transistor does not conduct while voltage applied to the first node is generally less than the gate voltage plus a threshold voltage of the second transistor. The constant voltage source comprises a third field effect transistor having a drain and a gate connected to the third node, and a source coupled to a first power supply voltage, such that the gate voltage is substantially equal to the first power supply voltage minus a threshold voltage of the third transistor.
48 citations
••
Abstract: The voltage breakdown behavior of a number of different MESFET structures has been investigated using a two-dimensional numerical model. The site of the avalanche is found to be under the drain edge of the gate in recessed devices under all bias conditions, but moves towards the drain contact in planar structures when the channel is not pinched off. The dependence of the breakdown voltage on a variety of geometrical and physical variables has been studied. In particular the surface is shown to play an important part in determining the breakdown voltage.
48 citations
••
TL;DR: In this paper, an improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region was proposed to reduce channel thickness between gate and drain as well as eliminate gate depletion layer extension to source and drain.
48 citations
•
31 Dec 1992TL;DR: In this paper, a reference voltage generating circuit with an improved temperature compensation function is presented, where the temperature compensation is achieved by appropriately setting a drain current of each transistor, and the transistors for temperature compensation can be formed in the same manufacturing steps.
Abstract: In a reference voltage generating circuit having an improved temperature compensation function, a PMOS transistor forming a constant voltage circuit has the same characteristics as a PMOS transistor forming a negative feedback circuit. As an ambient temperature changes, gate-source voltage and drain current characteristics of each transistor are shifted, but temperature compensation is achieved by appropriately setting a drain current of each transistor. Transistors for the temperature compensation can be formed in the same manufacturing steps, so that temperature compensating effect can be obtained without an additional manufacturing step.
48 citations