Dynamic range

About: Dynamic range is a research topic. Over the lifetime, 7576 publications have been published within this topic receiving 101739 citations. The topic is also known as: DNR & DR.

A 0.5-V 35- $ \mu $ W 85-dB DR Double-Sampled $\Delta\Sigma$ Modulator for Audio Applications

Abstract: This paper presents a 0.5-V 1.5-bit double-sampled ΔΣ modulator for audio applications. Unlike existing double-sampled designs, the proposed double-sampled ΔΣ modulator employs an input-feedforward topology to reduce internal signal swings, thereby relaxing design requirements for the low-voltage building blocks and reducing distortion. Moreover, in order to avoid instability and noise shaping degradation, the proposed architecture restores the noise transfer function (NTF) of the double-sampled modulator to its single-sampled equivalent with the help of compensation loops. In the circuit implementation, the proposed fully-differential amplifier adopts an inverter output stage and a common-mode feedback (CMFB) circuit with a global feedback loop in order to reduce power consumption. A resistor-string-reference switch matrix based on a direct summation quantizer is used to simplify the analog compensation loop. The chip prototype has been fabricated in a 0.13-μm CMOS technology with a core area of 0.57 mm2. The measured results show that when operating from a 0.5-V supply and clocked at 1.25 MHz, the modulator achieves a peak signal-to-noise and distortion ratio (SNDR) of 81.7 dB, a peak signal-to-noise ratio (SNR) of 82.4 dB and a dynamic range (DR) of 85.0 dB while consuming 35.2 μW for a 20-kHz signal bandwidth.

A 828μW 1.8V 80dB dynamic-range readout interface for a MEMS capacitive microphone

Abstract: A CMOS interface for a piston-type MEMS capacitive microphone is presented. It performs a capacitance-to-voltage conversion by bootstrapping the sensor through a voltage pre-amplifier, feeding a third-order sigma-delta modulator. The bootstrapping performs active parasitic compensation, improving the readout sensitivity by ~12 dB. The total current consumption is 460 uA at 1.8 V-supply. The digital output achieves 80 dBA-DR, with 63 dBA peak-SNR, using 0.35 um 2P/4M CMOS technology. The paper includes electrical and acoustic measurement results for the interface.

Simultaneous multi-impairment monitoring of 640 Gb/s signals using photonic chip based RF spectrum analyzer

Abstract: We report the first demonstration of simultaneous multi-impairment monitoring at ultrahigh bitrates using a THz bandwidth photonic-chip-based radio-frequency (RF) spectrum analyzer. Our approach employs a 7 cm long, highly nonlinear (gamma approximately 9900 /W/km), dispersion engineered chalcogenide planar waveguide to capture the RF spectrum of an ultrafast 640 Gb/s signal, based on cross-phase modulation, from which we numerically retrieve the autocorrelation waveform. The relationship between the retrieved autocorrelation trace and signal impairments is exploited to simultaneously monitor dispersion, in-band optical signal to noise ratio (OSNR) and timing jitter from a single measurement. This novel approach also offers very high OSNR measurement dynamic range (> 30 dB) and is scalable to terabit data rates.

Monolithically Integrated 8:1 SOA Gate Switch With Large Extinction Ratio and Wide Input Power Dynamic Range

Abstract: A monolithic 8:1 SOA gate switch that integrates an 8-ch SOA gate array, an 8:1 optical coupler, and a 1-ch SOA gate was developed for use in a large scale optical packet switching system. A 250-mum-long compact field-flattened coupler (FFC) produces a very small channel-imbalance together with a compact total chip size of 3.0 times 1.0 mm. The device exhibited a large ON-state gain of >14.3 dB and a small total gain deviation of 3.0 dB. The optimized passive waveguide structure successfully suppressed the stray light, which resulted in a record-high ON-OFF extinction ratio of >70 dB. We used a thin tensile-strained multi-quantum well (MQW) active layer which can attain high-saturation output power, low noise, and polarization insensitivity for SOA gates. Due to the coexistence of a high saturation output power and a low noise figure, the device exhibited a very wide input power dynamic range of 20.5 dB for a 10-Gb/s NRZ signal.

An Optically Integrated Coherent Frequency-Domain THz Spectrometer with Signal-to-Noise Ratio up to 80 dB

Abstract: A terahertz frequency domain spectrometer is implemented using two ErAs:GaAs photomixers in a highly compact configuration, utilizing all solid-state components and no moving parts. The system utilizes a single package integration of two 783 nm distributed feedback laser diodes with a high-resolution wavelength discriminator. Digital signal processing electronics provide precise frequency control and yield ~200 MHz accuracy of the THz signal frequency. Continuous mode-hop-free frequency sweeping is demonstrated with < 1 GHz resolution from 200 GHz to 1.85 THz. The coherent detection sensitivity is shown to be in good agreement with previous theoretical predictions and yields a signal-to-noise ratio of 80 dB/Hz at 200 GHz and 60 dB/Hz at 1 THz through a path length in air of one foot. These levels are more than 10 dB higher than previously measured. The spectrometer frequency resolution and dynamic range are suitable for applications involving analysis of chemical, biological, and explosive materials in solid-phase and gas-phase at atmospheric pressure; system performance is demonstrated via the transmission spectra of atmospheric water vapor.