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Effective mass (solid-state physics)

About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.


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TL;DR: In this paper, the Sb square net in an isostructural compound BaMnSb2 can host nearly massless Dirac fermions, and strong Shubnikov-de Haas (SdH) oscillations in this material are observed.
Abstract: Layered compounds AMnBi2 (A = Ca, Sr, Ba, or rare earth element) have been established as Dirac materials. Dirac electrons generated by the two-dimensional (2D) Bi square net in these materials are normally massive due to the presence of a spin-orbital coupling (SOC) induced gap at Dirac nodes. Here we report that the Sb square net in an isostructural compound BaMnSb2 can host nearly massless Dirac fermions. We observed strong Shubnikov-de Haas (SdH) oscillations in this material. From the analyses of the SdH oscillations, we find key signatures of Dirac fermions, including light effective mass (~0.052m0; m0, mass of free electron), high quantum mobility (1280 cm2V−1S−1) and a π Berry phase accumulated along cyclotron orbit. Compared with AMnBi2, BaMnSb2 also exhibits much more significant quasi two-dimensional (2D) electronic structure, with the out-of-plane transport showing nonmetallic conduction below 120 K and the ratio of the out-of-plane and in-plane resistivity reaching ~670. Additionally, BaMnSb2 also exhibits a G-type antiferromagnetic order below 283 K. The combination of nearly massless Dirac fermions on quasi-2D planes with a magnetic order makes BaMnSb2 an intriguing platform for seeking novel exotic phenomena of massless Dirac electrons.

94 citations

Journal ArticleDOI
TL;DR: In this article, a formulation based upon the extended zone scheme is presented with the main interest in the valley splitting in an n -channel (100) inversion layer of Si.
Abstract: The theories based upon the multi-valley effective mass equation proposed by Twose are criticized and it is concluded that they can not explain the observed valley splittings. In order to treat valley splittings correctly, a formulation based upon the extended zone scheme is presented with the main interest in the valley splitting in an n -channel (100) inversion layer of Si.

94 citations

Journal ArticleDOI
TL;DR: In this paper, an approximate calculation of the energy states for the $1s$ band of metallic hydrogen was carried out for smaller lattice constants than those considered by Wigner and Huntington, or by Baltensperger.
Abstract: The energy levels of ordered impurities in semiconductors are formally equivalent to the energy levels of metallic hydrogen if a number of simplifying approximations are made. An approximate calculation of the energy states for the $1s$ band of metallic hydrogen is carried out for smaller lattice constants than those considered by Wigner and Huntington, or by Baltensperger. A simple transformation of the distance and energy scales converts the calculation for metallic hydrogen to one applying to impurities in a semiconductor, if values for the effective mass and the dielectric constant are given. Experimental results for the optical energy gap in InAs are reported as a function of impurity concentration. The effective mass required to fit the optical data for InSb published by other workers is about $0.03m$, as compared to the value $0.013m$ found by cyclotron resonance measurements.

94 citations

Journal ArticleDOI
TL;DR: In this article, the effective masses for relaxed and biaxially strained Si, Ge, III-V compound semiconductors and their alloys on different interface orientations were calculated using nonlocal empirical pseudopotential with spin-orbit interaction.
Abstract: Electronic band structure and effective masses for relaxed and biaxially strained Si, Ge, III–V compound semiconductors (GaAs, GaSb, InAs, InSb, InP) and their alloys (InxGa1−xAs, InxGa1−xSb) on different interface orientations, (001), (110), and (111), are calculated using nonlocal empirical pseudopotential with spin-orbit interaction. Local and nonlocal pseudopotential parameters are obtained by fitting transport-relevant quantities, such as band gap and deformation potentials, to available experimental data. A cubic-spline interpolation is used to extend local form factors to arbitrary q and to obtain correct workfunctions. The nonlocal and spin-orbit terms are linearly interpolated between anions and cations for III–V semiconductors. The virtual crystal approximation is employed for the InxGa1−xAs and InxGa1−xSb alloys and deformation potentials are determined using linear deformation-potential theory. Band gap bowing parameters are extracted using least-square fitting for relaxed alloys and for strai...

94 citations

Journal ArticleDOI
TL;DR: In this paper, the dispersion relation which connects the real and the imaginary parts of the single-particle potential in finite nuclei is written in a form which involves an integration over the imaginary part at negative as well as at positive energies.

94 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202215
2021410
2020421
2019395
2018362
2017412