scispace - formally typeset
Search or ask a question
Topic

Effective mass (solid-state physics)

About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.


Papers
More filters
Journal ArticleDOI
H I Ralph1
TL;DR: In this paper, the excitonic optical absorption in the presence of a static electric field has been evaluated by solving the effective mass equation numerically, and the results are compared with a previous approximate calculation and some experimental measurements.
Abstract: The excitonic optical absorption in the presence of a static electric field has been evaluated by solving the effective mass equation numerically. The results are compared with a previous approximate calculation and some experimental measurements. A certain degree of agreement has been found with experiment.

72 citations

Journal ArticleDOI
TL;DR: In this paper, the electron and hole effective masses of kesterite and stannite-structured Cu_2Zn-IV-VI_4 semiconductors are systematically studied using first-principles calculations.
Abstract: The electron and hole effective masses of kesterite (KS) and stannite (ST) structured Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se) semiconductors are systematically studied using first-principles calculations. We find that the electron effective masses are almost isotropic, while strong anisotropy is observed for the hole effective mass. The electron effective masses are typically much smaller than the hole effective masses for all studied compounds. The ordering of the topmost three valence bands and the corresponding hole effective masses of the KS and ST structures are different due to the different sign of the crystal-field splitting. The electron and hole effective masses of Se-based compounds are significantly smaller compared to the corresponding S-based compounds. They also decrease as the atomic number of the group IV elements (Si, Ge, Sn) increases, but the decrease is less notable than that caused by the substitution of S by Se.

72 citations

Journal ArticleDOI
TL;DR: This work shows that, in bilayer black phosphorus with an interlayer twist angle of 90°, the anisotropy of its electronic structure and optical transitions is tunable by gating, and this gate-controllable band structure also leads to a switchable optical linear dichroism, where the polarization of the lowest-energy optical transitions (absorption or luminescence) is Tunable By gating.
Abstract: Anisotropy describes the directional dependence of a material’s properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure and thus not tunable by the gating techniques used in modern electronics. Here we show that, in bilayer black phosphorus with an interlayer twist angle of 90°, the anisotropy of its electronic structure and optical transitions is tunable by gating. Using first-principles calculations, we predict that a laboratory-accessible gate voltage can induce a hole effective mass that is 30 times larger along one Cartesian axis than along the other axis, and the two axes can be exchanged by flipping the sign of the gate voltage. This gate-controllable band structure also leads to a switchable optical linear dichroism, where the polarization of the lowest-energy optical transitions (absorption or luminescence) is tunable by gating. Thus, anisotropy is a tunable degree of freedom in twisted bilayer black phosphorus.

72 citations

Journal ArticleDOI
TL;DR: In this paper, the influence of external electric field and hydrostatic stress on the binding energy and impurity polarizability of shallow-donor impurities in an isolated GaAs-(Ga, Al)As quantum well is considered.
Abstract: Theoretical calculations on the influence of both an external electric field and hydrostatic stress on the binding energy and impurity polarizability of shallow-donor impurities in an isolated GaAs-(Ga, Al)As quantum well are presented. A variational procedure within the effective-mass approximation is considered. The pressure-related Γ-X crossover is taken into account. As a general feature, we observe that the binding energy increases as the length of the well decreases. For the low-pressure regime we observe a linearly binding energy behaviour. For the high-pressure regime the simultaneous effects of the barrier height and the applied electric field bend the binding energy curves towards smaller values. For low hydrostatic pressures the impurity polarization remains constant in all cases with an increasing value as the field increases. This constant behaviour shows that the small variations in well width, effective mass, and dielectric constant with pressure do not appreciably affect polarizability. For high hydrostatic pressure, we see a non-linear increase in polarizability, mainly due to the decrease of barrier height as a result of the external pressure, which allows further deformation of the impurity.

72 citations


Network Information
Related Topics (5)
Band gap
86.8K papers, 2.2M citations
91% related
Magnetization
107.8K papers, 1.9M citations
91% related
Electron
111.1K papers, 2.1M citations
90% related
Quantum dot
76.7K papers, 1.9M citations
89% related
Scattering
152.3K papers, 3M citations
88% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202215
2021410
2020421
2019395
2018362
2017412