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Effective mass (solid-state physics)
About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.
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TL;DR: In this paper, the authors present theoretical studies on the transport properties and localization effects of bilayer graphene and calculate the conductivity by using the effective mass model with the self-consistent Born approximation, in the presence and absence of an energy gap opened by the interlayer asymmetry.
Abstract: We present theoretical studies on the transport properties and localization effects of bilayer graphene. We calculate the conductivity by using the effective mass model with the self-consistent Born approximation, in the presence and absence of an energy gap opened by the interlayer asymmetry. We find that, in the absence of the gap, the minimum conductivity approaches the universal value by increasing the disorder potential, and the value is robust in the strong disorder regime where mixing with high-energy states is considerable. The gap-opening suppresses the conductivity over a wide energy range, even in the region away from the gap.We also study the localization effects in the vicinity of zero energy in bilayer graphene. We find that the states are all localized in the absence of the gap, while the gap-opening causes a phase transition analogous to the quantum Hall transition, which is accompanied by electron delocalization.
67 citations
TL;DR: By using the point canonical transformation approach in a manner distinct from previous ones, the authors generate some new exactly solvable or quasi-exactly solvable potentials for the one-dimensional Schrodinger equation with a position-dependent effective mass.
Abstract: By using the point canonical transformation approach in a manner distinct from previous ones, we generate some new exactly solvable or quasi-exactly solvable potentials for the one-dimensional Schrodinger equation with a position-dependent effective mass. In the latter case, SUSYQM techniques provide us with some additional new potentials.
67 citations
TL;DR: In this paper, the electrodynamic properties of Ba(Fe0.92Co0.08)2As2 single crystals have been investigated by reflectivity measurements in a wide frequency range.
Abstract: The electrodynamic properties of Ba(Fe0.92Co0.08)2As2 and Ba(Fe0.95Ni0.05)2As2 single crystals have been investigated by reflectivity measurements in a wide frequency range. In the metallic state, the optical conductivity consists of a broad incoherent background and a narrow Drude-like component which determines the transport properties; only the latter contribution strongly depends on the composition and temperature. This subsystem reveals a T 2 behavior in the dc resistivity and scattering rate disclosing a hidden Fermi-liquid behavior in the 122 iron-pnictide family. An extended Drude analysis yields the frequency dependence of the effective mass (with m � =mb � 5 in the static limit) and scattering rate that does not disclose a simple power law. The spectral weight shifts to lower energies upon cooling; a significant fraction is not recovered within the infrared range of frequencies.
66 citations
TL;DR: The magnetophonon effect arises due to resonant phonon emission or absorption by free charge carriers in a solid in a high magnetic field as mentioned in this paper, which causes resonant transitions between Landau levels at magnetic fields.
66 citations
TL;DR: In this article, the density of states and carrier concentration effective masses have been calculated for strained p−type non-degenerate Si1−xGex using the band structure recently proposed by Manku and Nathan.
Abstract: The density of states and carrier concentration effective masses have been calculated for strained p‐type nondegenerate Si1−xGex using the band structure recently proposed by Manku and Nathan (Phys. Rev. B). The results show a significant decrease in both masses compared to pure silicon. It turns out that the total carrier concentration effective mass for a Ge composition, x=0.3 is approximately three times smaller than the corresponding value for silicon. At 300 K, the total carrier concentration effective mass is 0.35 (normalized with the free electron mass) and at 77 K, the corresponding value is 0.22.
66 citations