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Effective mass (solid-state physics)

About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.


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Journal ArticleDOI
TL;DR: The low-T magnetic order in the metal helps to deconvolute contributions from charge correlations and spin fluctuations and helps to understand the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the Mott-Hubbard metal-insulator transition.
Abstract: We study the evolution with pressure P and band filling y of the heat capacity, Hall coefficient, and resistivity at the approach to the T→0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V_(2-y)O_3. Under P, the electronic effective mass m* diverges at the MIT with a negligible change in carrier concentration n away from half-filling. Conversely, in the doped system m* actually decreases as the MIT is approached, while n increases linearly with y. The low-T magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.

65 citations

Journal ArticleDOI
TL;DR: In this article, the conduction mechanism in Sb-doped BaSnO3 epitaxial films was studied and compared with that of its counterpart, La-Doped SbO3, and it was shown that electron scattering by threading dislocations depends critically on the dopant site.
Abstract: We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

65 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used the optical matrix elements and the band structure computed by the k-cdot p method within the envelope function approximation to study gain in a quantum well.
Abstract: Gain in a quantum well is studied by using the optical matrix elements and the band structure computed by the k \cdot p method within the envelope function approximation. Due to band mixing, the k \cdot p method gives nonparabolic bands which affect both the minimum confinement energies and the density of states functions. The density of states functions are found to differ considerably from the simple step-like shape computed from the band edge effective masses. The band mixing also results in large differences in the momentum vector dependence of the matrix elements, and moreover, some of the transitions which were previously assumed to be forbidden become partially allowed. The quantum well gain spectra calculated by the k \cdot p method and the k -selection rules clearly show the effects of band mixing both in shape and in peak magnitude. These results are considerably different than those obtained from the conventional methods which consider an effective mass electron (or hole) in a finite one-dimensional potential well with parabolic bands and with matrix elements which have constant total magnitude. A practical conclusion which is reached from these comparisons is that the threshold excitation in a quantum well laser is found to be strongly underestimated if band mixing effects are ignored.

65 citations

Journal ArticleDOI
TL;DR: In this paper, Monte Carlo simulation results for the field and temperature-dependent electronic mobilities, drift velocities, and diffusion coefficients in 4H-SiC were presented, including crystal anisotropy.
Abstract: Monte Carlo simulation results for the field‐ and temperature‐dependent electronic mobilities, drift velocities, and diffusion coefficients in 4H‐SiC are presented. The calculations include crystal anisotropy, and values are obtained for field orientations both parallel and transverse to the c axis of the hexagonal structures. The simulations are based on electron effective mass data that has only recently become available. Our theoretical predictions of the electron mobilities and their anisotropy ratios compare very well with available experimental data at 300 K. A room‐temperature velocity of 2.7×107 cm/s was obtained in 4H‐SiC for transport parallel to the c axis. This value is found to be larger than both 6H and 3C material. Finally, our calculations for the longitudinal and transverse diffusion coefficients at 300 K indicate that both have appreciable field dependences and exhibit a ‘‘soft’’ threshold.

65 citations

Journal ArticleDOI
TL;DR: A good agreement with the experimental data is obtained within the Feynman polaron model, validating a viable theoretical method to predict the carrier effective mass of LHPs ab initio.
Abstract: Lead-halide perovskite (LHP) semiconductors are emergent optoelectronic materials with outstanding transport properties which are not yet fully understood. We find signatures of large polaron formation in the electronic structure of the inorganic LHP ${\mathrm{CsPbBr}}_{3}$ by means of angle-resolved photoelectron spectroscopy. The experimental valence band dispersion shows a hole effective mass of $0.26\ifmmode\pm\else\textpm\fi{}0.02\text{ }{m}_{e}$, 50% heavier than the bare mass ${m}_{0}=0.17\text{ }{m}_{e}$ predicted by density functional theory. Calculations of the electron-phonon coupling indicate that phonon dressing of the carriers mainly occurs via distortions of the Pb-Br bond with a Fr\"ohlich coupling parameter $\ensuremath{\alpha}=1.81$. A good agreement with our experimental data is obtained within the Feynman polaron model, validating a viable theoretical method to predict the carrier effective mass of LHPs ab initio.

65 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202215
2021410
2020421
2019395
2018362
2017412