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Effective mass (solid-state physics)

About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.


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TL;DR: In this paper, the intrinsic density in GaAs is derived from the temperature dependences of the intrinsic gap and of the valence and conduction band system statistical weights, and the effect of the next two conduction bands is taken into account in deducing Ni(T) for the range 250-1500 K.
Abstract: Prior attempts at determination of the intrinsic density in GaAs are reviewed, and this quantity is then deduced anew from the temperature dependences of the intrinsic gap and of the valence and conduction band system statistical weights. The nonparabolicity of the lowest conduction band, and the effects of the next two conduction bands, are taken into account in deducing ni (T) for the range 250–1500 K. That procedure gives a room‐temperature value ni (300) = 2.1×106 cm−3, which can be compared with prior values from various experimental methods. The magnitude and temperature dependence of ni are then calculated by a different and entirely new method, which utilizes experimental data of the electron and hole emission and capture coefficients associated with Cr2+?Cr3+ transitions of the substitutional CrGa deep‐level impurity in GaAs. Recent data of Martin et al. concerning these coefficients permits a deduction of ni(T) = 1.05 ×1016 T3/2 exp(−0.802/kT) cm−3 for 300

138 citations

Journal ArticleDOI
TL;DR: In this article, structural, electronic, and optical properties for the cubic, tetragonal, and monoclinic crystalline phases of ZrO2, as derived from ab initio full-relativistic calculations, are presented.
Abstract: Structural, electronic, and optical properties for the cubic, tetragonal, and monoclinic crystalline phases of ZrO2, as derived from ab initio full-relativistic calculations, are presented. The electronic structure calculations were carried out by means of the all-electron full-potential linear augmented plane wave method, within the framework of the density functional theory and the local density approximation. The calculated carrier effective masses are shown to be highly anisotropic. The results obtained for the real and imaginary parts of the dielectric function, the reflectivity, and the refraction index show good agreement with the available experimental results. In order to obtain the static dielectric constant of ZrO2, we added to the electronic part the optical phonon contribution, which leads to values of ϵ1(0)≃29.5,26.2,21.9, respectively, along the xx, yy, and zz directions, for the monoclinic phase, in excellent accordance with experiment. Relativistic effects, including the spin-orbit intera...

137 citations

Journal ArticleDOI
TL;DR: In this article, the intrinsic carrier concentration, reduced Fermi energy, electron effective mass, and the FermI energy with and without doping were calculated for Hg1−xCdxTe with x>0.16 and 50
Abstract: The intrinsic carrier concentration, reduced Fermi energy, electron effective mass, and the Fermi energy with and without doping are calculated for Hg1−xCdxTe with x>0.16 and 50

137 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the strain effects on the properties of the Holey 2D C2N crystal by first-principles calculations and showed that the material is quite soft with a small stiffness constant and can sustain large strains ≥12%.
Abstract: A two-dimensional (2D) material, the holey 2D C2N (h2D-C2N) crystal, has recently been synthesized. Here, we investigate the strain effects on the properties of this material by first-principles calculations. We show that the material is quite soft with a small stiffness constant and can sustain large strains ≥12%. It remains a direct gap semiconductor under strain, and the bandgap size can be tuned in a wide range as large as 1 eV. Interestingly, for biaxial strain, a band crossing effect occurs at the valence band maximum close to a 8% strain, leading to a dramatic increase of the hole effective mass. Strong optical absorption can be achieved by strain tuning with absorption coefficient ∼106 cm−1 covering a wide spectrum. Our findings suggest the great potential of strain-engineered h2D-C2N in electronic and optoelectronic device applications.

137 citations

Journal ArticleDOI
TL;DR: In this paper, the authors reported theoretical and experimental evidence that EuCd2As2 in magnetic fields greater than 1.6 T applied along the c axis is a Weyl semimetal with a single pair of Weyl nodes.
Abstract: We report theoretical and experimental evidence that EuCd2As2 in magnetic fields greater than 1.6 T applied along the c axis is a Weyl semimetal with a single pair of Weyl nodes. Ab initio electronic structure calculations, verified at zero field by angle-resolved photoemission spectra, predict Weyl nodes with wave vectors k = (0, 0, +/- 0.03) x 2 pi/c at the Fermi level when the Eu spins are fully aligned along the c axis. Shubnikov-de Haas oscillations measured in fields parallel to c reveal a cyclotron effective mass of m(c)* = 0.08m(e) and a Fermi surface of extremal area A(ext) = 0.24 nm(-2), corresponding to 0.1% of the area of the Brillouin zone. The small values of m(c)* and A(ext) are consistent with quasiparticles near a Weyl node. The identification of EuCd2As2 as a model Weyl semimetal opens the door to fundamental tests of Weyl physics.

136 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202215
2021410
2020421
2019395
2018362
2017412