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Effective mass (solid-state physics)

About: Effective mass (solid-state physics) is a research topic. Over the lifetime, 12539 publications have been published within this topic receiving 295485 citations.


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Journal ArticleDOI
TL;DR: The control of the dispersion of matter wave packets utilizing periodic potentials is demonstrated, analogous to the technique of dispersion management known in photon optics, using a weak optical lattice.
Abstract: We demonstrate the control of the dispersion of matter wave packets utilizing periodic potentials. This is analogous to the technique of dispersion management known in photon optics. Matter wave packets are realized by Bose-Einstein condensates of $^{87}\mathrm{R}\mathrm{b}$ in an optical dipole potential acting as a one-dimensional waveguide. A weak optical lattice is used to control the dispersion relation of the matter waves during the propagation of the wave packets. The dynamics are observed in position space and interpreted using the concept of effective mass. By switching from positive to negative effective mass, the dynamics can be reversed. The breakdown of the approximation of constant, as well as experimental signatures of an infinite effective mass are studied.

113 citations

Journal ArticleDOI
R.J. Collins1, D.A. Kleinman1
TL;DR: In this article, the authors measured the effective mass of single crystals of ZnO with free-carrier concentration below 1 × 1016 cm−3 and showed that the free carriers' contribution to the optical constants becomes significant in the reflection spectra for carrier concentrations larger than ∼ 1× 1017 cm −3.

112 citations

Journal ArticleDOI
TL;DR: In this article, the magneto-stark effect and electronic transport properties on GaSe have been studied and it has been shown that GaSe has nearly isotropic electronic states at the forbidden gap and the valence band anisotropy is anomalous.

112 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used electroabsorption spectroscopy to measure the exciton binding energy (EB), electron-hole reduced effective mass (μ), and one-electron band gap (Eg) at the fundamental absorption edge of the hybrid organic-inorganic perovskite CH3NH3PbI3 in its tetragonal phase at 300 K.
Abstract: We use electroabsorption (EA) spectroscopy to measure the exciton binding energy (EB), electron–hole reduced effective mass (μ), and one-electron band gap (Eg) at the fundamental absorption edge of the hybrid organic–inorganic perovskite CH3NH3PbI3 in its tetragonal phase at 300 K By studying the second-harmonic EA spectra at the fundamental absorption edge we establish that the room-temperature EA response in CH3NH3PbI3 follows the low-field Franz–Keldysh–Aspnes (FKA) effect Following FKA analysis we find that μ = 012 ± 003m0, EB = 74 meV, and Eg = 1633 eV Our results provide direct experimental evidence that at room temperature primary transitions occurring in CH3NH3PbI3 can essentially be described in terms of free carrier generation

112 citations

Journal ArticleDOI
TL;DR: A tight-binding model in the three-center representation, with an orthogonal sp 3 set of orbitals and interactions up to third neighbor, is introduced and gives a good description of bulk Si and Ge and reproduces known results for their band structures.
Abstract: A tight-binding model in the three-center representation, with an orthogonal ${\mathit{sp}}^{3}$ set of orbitals and interactions up to third neighbor, is introduced. This model gives a good description of bulk Si and Ge and reproduces known results for their band structures, including the lowest conduction band, their density of states, effective masses, deformation potentials, and dielectric function. Also, this is an efficient model as far as computer time is concerned; therefore, it is most appropriate for application to superlattices (SL's). In particular, it is used to study the electronic properties of some strained Si/Ge superlattices. Their band structure, confinement of superlattice states, transition probabilities, effective masses, and spin splittings were investigated and the influence of the strain and superlattice periodicity was studied. It was found that under specific conditions of growth, some SL's can be direct-gap materials. Finally, the comparison with experimental results shows that the present model is a realistic one and can be used to describe the electronic properties of the strained Si/Ge SL's and clarify many of the points that are under debate.

112 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202215
2021410
2020421
2019395
2018362
2017412