Showing papers on "Electric potential published in 2016"

Implicit self-consistent electrolyte model in plane-wave density-functional theory

Abstract: The ab-initio computational treatment of electrochemical systems requires an appropriate treatment of the solid/liquid interfaces. A fully quantum mechanical treatment of the interface is computationally demanding due to the large number of degrees of freedom involved. In this work, we describe a computationally efficient model where the electrode part of the interface is described at the density-functional theory (DFT) level, and the electrolyte part is represented through an implicit solvation model based on the Poisson-Boltzmann equation. We describe the implementation of the linearized Poisson-Boltzmann equation into the Vienna Ab-initio Simulation Package (VASP), a widely used DFT code, followed by validation and benchmarking of the method. To demonstrate the utility of the implicit electrolyte model, we apply it to study the surface energy of Cu crystal facets in an aqueous electrolyte as a function of applied electric potential. We show that the applied potential enables the control of the shape of nanocrystals from an octahedral to a truncated octahedral morphology with increasing potential.

Thickness-dependent charge transport in few-layer MoS₂ field-effect transistors.

Abstract: Molybdenum disulfide (MoS2) is currently under intensive study because of its exceptional optical and electrical properties in few-layer form. However, how charge transport mechanisms vary with the number of layers in MoS2 flakes remains unclear. Here, exfoliated flakes of MoS2 with various thicknesses were successfully fabricated into field-effect transistors (FETs) to measure the thickness and temperature dependences of electrical mobility. For these MoS2 FETs, measurements at both 295 K and 77 K revealed the maximum mobility for layer thicknesses between 5 layers (~3.6 nm) and 10 layers (~7 nm), with ~70 cm2 V−1 s−1 measured for 5 layer devices at 295 K. Temperature-dependent mobility measurements revealed that the mobility rises with increasing temperature to a maximum. This maximum occurs at increasing temperature with increasing layer thickness, possibly due to strong Coulomb scattering from charge impurities or weakened electron–phonon interactions for thicker devices. Temperature-dependent conductivity measurements for different gate voltages revealed a metal-to-insulator transition for devices thinner than 10 layers, which may enable new memory and switching applications. This study advances the understanding of fundamental charge transport mechanisms in few-layer MoS2, and indicates the promise of few-layer transition metal dichalcogenides as candidates for potential optoelectronic applications.

Analysis of electrolyte transport through charged nanopores

Abstract: We revisit the classical problem of flow of electrolyte solutions through charged capillary nanopores or nanotubes as described by the capillary pore model (also called "space charge" theory). This theory assumes very long and thin pores and uses a one-dimensional flux-force formalism which relates fluxes (electrical current, salt flux, and fluid velocity) and driving forces (difference in electric potential, salt concentration, and pressure). We analyze the general case with overlapping electric double layers in the pore and a nonzero axial salt concentration gradient. The 3×3 matrix relating these quantities exhibits Onsager symmetry and we report a significant new simplification for the diagonal element relating axial salt flux to the gradient in chemical potential. We prove that Onsager symmetry is preserved under changes of variables, which we illustrate by transformation to a different flux-force matrix given by Gross and Osterle [J. Chem. Phys. 49, 228 (1968)JCPSA60021-960610.1063/1.1669814]. The capillary pore model is well suited to describe the nonlinear response of charged membranes or nanofluidic devices for electrokinetic energy conversion and water desalination, as long as the transverse ion profiles remain in local quasiequilibrium. As an example, we evaluate electrical power production from a salt concentration difference by reverse electrodialysis, using an efficiency versus power diagram. We show that since the capillary pore model allows for axial gradients in salt concentration, partial loops in current, salt flux, or fluid flow can develop in the pore. Predictions for macroscopic transport properties using a reduced model, where the potential and concentration are assumed to be invariant with radial coordinate ("uniform potential" or "fine capillary pore" model), are close to results of the full model.

A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO 2 /High- $k$ Stacked Gate-Oxide Structure

Abstract: A compact 2-D analytical model for electrical characteristics such as surface potential, drain current, and threshold voltage of double-gate tunnel FET (DG TFETs) with a SiO2/High- ${k}$ stacked gate-oxide structure is proposed in this paper. Poisson’s equation has been solved using parabolic approximation method to model the channel potential. The band-to-band tunneling generation rate has been expressed as a function of channel electric field derived from the channel potential and then integrated analytically over the channel thickness to derive the drain current of the stacked-gate DG TFETs using the shortest tunneling path $(L_{t}^{\min } )$ concept. The effect of source/drain depletion regions has been included for the better accuracy of the proposed model. The maximum transconductance method has finally been used to extract the threshold voltage from the drain current of the device. The effects of various device parameters on the channel potential, drain current, and threshold voltage have been investigated. The model results have been compared with the simulation data obtained using the commercially available ATLAS 2-D device simulator from SILVACO for the validity of the proposed model.

2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Abstract: A 2-D analytical model for the surface potential and threshold voltage of graded-channel dual-material double-gate (GCDMDG) MOSFETs obtained by intermixing the concepts of graded doping in channel and dual material in gate engineering has been proposed. The parabolic approximation method has been explored for determining the potential distribution function of the device by solving Poisson’s equation with suitable boundary conditions. The threshold voltage roll-off, drain-induced barrier lowering and lateral electric field have also been examined. The effects of different device parameters on device performance have been evaluated to check its figure-of-merit over the graded-channel double-gate (GCDG) and dual-material double-gate (DMDG) structures. For validation of the proposed model, the results have been compared with the numerical simulation data obtained by ATLAS™, a 2-D device simulator from SILVACO.

Uniform electric-field-induced lateral migration of a sedimenting drop

Abstract: We investigate the motion of a sedimenting drop in the presence of an electric field in an arbitrary direction, otherwise uniform, in the limit of small interface deformation and low-surface-charge convection. We analytically solve the electric potential in and around the leaky dielectric drop, and solve for the Stokesian velocity and pressure fields. We obtain the correction in drop velocity due to shape deformation and surface-charge convection considering small capillary number and small electric Reynolds number which signifies the importance of charge convection at the drop surface. We show that tilt angle, which quantifies the angle of inclination of the applied electric field with respect to the direction of gravity, has a significant effect on the magnitude and direction of the drop velocity. When the electric field is tilted with respect to the direction of gravity, we obtain a non-intuitive lateral motion of the drop in addition to the buoyancy-driven sedimentation. Both the charge convection and shape deformation yield this lateral migration of the drop. Our analysis indicates that depending on the magnitude of the tilt angle, conductivity and permittivity ratios, the direction of the sedimenting drop can be controlled effectively. Our experimental investigation further confirms the presence of lateral migration of the drop in the presence of a tilted electric field, which is in support of the essential findings from the analytical formalism.

Lattice Boltzmann model for Coulomb-driven flows in dielectric liquids.

Abstract: In this paper, we developed a unified lattice Boltzmann model (LBM) to simulate electroconvection in a dielectric liquid induced by unipolar charge injection. Instead of solving the complex set of coupled Navier-Stokes equations, the charge conservation equation, and the Poisson equation of electric potential, three consistent lattice Boltzmann equations are formulated. Numerical results are presented for both strong and weak injection regimes, and different scenarios for the onset and evolution of instability, bifurcation, and chaos are tracked. All LBM results are found to be highly consistent with the analytical solutions and other numerical work.

A simplified shear and normal deformations nonlocal theory for bending of functionally graded piezomagnetic sandwich nanobeams in magneto-thermo-electric environment

Abstract: A simplified three-unknown shear and normal deformations nonlocal beam theory for thermo-electro-magneto mechanical bending analysis of a nanobeam with a functionally graded material core and two functionally piezomagnetic layers is studied in this paper. The assumed structure is subjected to mechanical, thermal, electrical, and magnetic loads. An initial applied voltage and magnetic load is considered on the functionally graded piezomagnetic material layers. Eringen’s nonlocal constitutive equations are considered in the analysis. Governing equations are derived according to the present refined theory using the principle of virtual displacements. The numerical results including the deflection, electric, and magnetic potential distribution are calculated in terms of important parameters of the problem such as applied electric and magnetic potentials, two parameters of temperature distribution, and nonlocal parameter. The numerical results indicate that increase in applied electric potential increases the ...

Topology optimization of piezoelectric nanostructures

Abstract: We present an extended finite element formulation for piezoelectric nanobeams and nanoplates that is coupled with topology optimization to study the energy harvesting potential of piezoelectric nanostructures. The finite element model for the nanoplates is based on the Kirchoff plate model, with a linear through the thickness distribution of electric potential. Based on the topology optimization, the largest enhancements in energy harvesting are found for closed circuit boundary conditions, though significant gains are also found for open circuit boundary conditions. Most interestingly, our results demonstrate the competition between surface elasticity, which reduces the energy conversion efficiency, and surface piezoelectricity, which enhances the energy conversion efficiency, in governing the energy harvesting potential of piezoelectric nanostructures.

Electric Potential Gradient at the Buried Interface between Lithium-Ion Battery Electrodes and the SEI Observed Using Photoelectron Spectroscopy

Abstract: The buried interface between the bulk electrode material and the solid electrolyte interphase (SEI) in cycled Li-ion battery anodes is suggested to incorporate an electric potential gradient. This suggestion is based on photoelectron spectroscopy (PES) results from different anode materials that all show relative binding energy shifts between the components of the SEI and the active anode. Implications of this electric potential gradient on binding energy reference points in PES as well as on charge-transfer kinetics in Li-ion batteries are discussed. Specifically, we show that the separation of surface layer and bulk material spectral contributions (depth profiling) is crucial for consistent data interpretation. We conclude that previous interpretations of lithiation as cause for changes in PES spectra may need to be revised.

Fast, high-resolution surface potential measurements in air with heterodyne Kelvin probe force microscopy.

Abstract: Kelvin probe force microscopy (KPFM) adapts an atomic force microscope to measure electric potential on surfaces at nanometer length scales. Here we demonstrate that Heterodyne-KPFM enables scan rates of several frames per minute in air, and concurrently maintains spatial resolution and voltage sensitivity comparable to frequency-modulation KPFM, the current spatial resolution standard. Two common classes of topography-coupled artifacts are shown to be avoidable with H-KPFM. A second implementation of H-KPFM is also introduced, in which the voltage signal is amplified by the first cantilever resonance for enhanced sensitivity. The enhanced temporal resolution of H-KPFM can enable the imaging of many dynamic processes, such as such as electrochromic switching, phase transitions, and device degredation (battery, solar, etc), which take place over seconds to minutes and involve changes in electric potential at nanometer lengths.

Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

Abstract: This paper proposes an analytical 2-D model for the channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile. The 2-D Poisson equation has been solved by using the evanescent-mode analysis to obtain the potential distribution function in the channel. The position of the conduction path also has been modeled to calculate the potential at different positions of the conduction path. The validity of the proposed 2-D potential and threshold voltage models is shown by comparing the results with the simulation data obtained by a 2-D TCAD ATLAS device simulator.

Platypus: Indoor Localization and Identification through Sensing of Electric Potential Changes in Human Bodies

Abstract: Platypus is the first system to localize and identify people by remotely and passively sensing changes in their body electric potential which occur naturally during walking. While it uses three or more electric potential sensors with a maximum range of 2 m, as a tag-free system it does not require the user to carry any special hardware. We describe the physical principles behind body electric potential changes, and a predictive mathematical model of how this affects a passive electric field sensor. By inverting this model and combining data from sensors, we infer a method for localizing people and experimentally demonstrate a median localization error of 0.16 m. We also use the model to remotely infer the change in body electric potential with a mean error of 8.8 % compared to direct contact-based measurements. We show how the reconstructed body electric potential differs from person to person and thereby how to perform identification. Based on short walking sequences of 5 s, we identify four users with an accuracy of 94 %, and 30 users with an accuracy of 75 %. We demonstrate that identification features are valid over multiple days, though change with footwear.

Anomalous Transport Due to the Conformal Anomaly.

Abstract: We show that the scale (conformal) anomaly in field theories leads to new anomalous transport effects that emerge in an external electromagnetic field in an inhomogeneous gravitational background. In inflating geometry the QED scale anomaly locally generates an electric current that flows in opposite direction with respect to background electric field (the scale electric effect). In a static spatially inhomogeneous gravitational background the dissipationless electric current flows transversely both to the magnetic field axis and to the gradient of the inhomogeneity (the scale magnetic effect). The anomalous currents are proportional to the beta function of the theory.

Employing sinusoidal shear deformation plate theory for transient analysis of three layers sandwich nanoplate integrated with piezo-magnetic face-sheets

Abstract: In this paper, based on the sinusoidal shear deformation plate theory, equations of motion for a sandwich nanoplate containing a nano core and two integrated piezo-magnetic face-sheets are derived. The piezo-magnetic face-sheets are subjected to three dimensional electric and magnetic potentials. Nonlocal piezo-magneto-elastic relations are derived in a thermal environment. Hamilton's principle is used to derive seven equations of motion in terms of three deformation components of mid-surface, two shear components and electric and magnetic potentials. Natural frequencies of the sandwich nanoplate are derived in terms of nonlocal parameter. After finding solutions to the governing equations of motion, the effect of important parameters of the nanoplate are investigated on the mechanical, electrical and magnetic components of the nanoplate. Based on the present study, with increasing applied electric potential, dimensionless deflection is decreased and maximum electric and magnetic potentials are increased. Furthermore, with increasing applied magnetic potential, deflection is increased and maximum electric and magnetic potentials are decreased significantly. The numerical results of this problem indicate that one can control deformation or stress in the nano structure by changing the applied electric and magnetic potentials.

Free vibration, wave propagation and tension analyses of a sandwich micro/nano rod subjected to electric potential using strain gradient theory

Abstract: Strain gradient theory is used to study free vibration, wave propagation and tension analyses of a sandwich micro/nano rod made of piezoelectric materials under electric potential. The structure is resting on a Pasternak's foundation medium. Love's rod model is used for derivation of displacement field. The piezoelectric face sheets are subjected to two-dimensional electric potential including an applied voltage at top of plate and a cosine term along the thickness direction. Hamilton's principle is used to derive governing equations of motion in terms of axial displacement and electric potential. Three distinct behaviors of the present problem including free vibration, wave propagation and tension analyses are performed. Some important numerical results are presented in detail to capture the effect of materials length scales and applied voltage on the different behaviors of microrod.

Electric Field Effects on Spin Splitting of Two-Dimensional van der Waals Arsenene/FeCl2 Heterostructures

Abstract: We perform an ab initio simulation on the structural and electronic properties of van der Waals monolayer arsenene/FeCl2 heterostructures. Spin splitting appears at the conduction band minimum of arsenene due to interfacial coupling between As p and Cl p, Fe d states in the spin-down channel. The maximum splitting energy is 123 meV in all stacking configurations. Moreover, the splitting energy can be tuned by a perpendicular electric field. At a field of 5 V/nm, the spin-splitting direction can be inversed, and the splitting energy is −66 meV. Additionally, the positive electric field makes the system turn from an Ohmic contact into a Schottky one, which realizes a continuous modulation on the barrier height. More importantly, the electric control of spin-splitting inversion can be converted into an electric potential difference in arsenene according to the anomalous Hall effect. The transformation from spin-manipulation information to electric signal is useful in spintronic devices.

Nonlinear separate spin evolution in degenerate electron-positron-ion plasmas

Abstract: The non-linear evolution of spin-electron acoustic, positron-acoustic, and spin-electron-positron acoustic waves is considered. It is demonstrated that weakly nonlinear dynamics of each wave leads to the soliton formation. Altogether, we report on the existence of three different solitons. The spin-electron acoustic soliton known for electron-ion plasmas is described for electron-positron-ion plasmas for the first time. The existence of the spin-electron-positron acoustic soliton is reported for the first time. The positron-acoustic soliton and the spin-electron-positron acoustic soliton arise as the areas of a positive electric potential. The spin-electron acoustic soliton behaves as the area of a negative electric potential at the relatively small positron imbalance n0p/n0e=0.1 and as the area of a positive electric potential at the relatively large positron imbalance n0p/n0e=0.5.

Biocide-Free Antifouling on Insulating Surface by Wave-Driven Triboelectrification-Induced Potential Oscillation

Abstract: A biocide-free antifouling method on wetted insulating surfaces, enabled by the oscillation of electric potential generated by an integrated triboelectric wave harvester (I-TEWH) is reported. Distinct from previous studies that reported antifouling on conducting surfaces by applying an additional power source, this method achieves antifouling on insulating surfaces with zero-power consumption. The electric potential in the vicinity of a protected surface oscillates in large amplitude as a result of periodically accumulated free electrons on an underlying electrode. The dynamic flow of the free electrons is driven by the I-TEWH that converts ambient wave energy by solid–liquid interface triboelectrification. As a consequence, the oscillating electric potential disturbs the inherent charge distribution on microbes due to electrostatic induction, preventing their initial adhesion onto the protected surface and thus prohibiting the subsequent formation of macroorganisms. Significant anti-adhesion efficiencies of as high as 99.3%, 99.1%, and 96.0% are achieved for negative-gram bacteria (Escherichia coli), positive-gram bacteria (Staphylococcus aureus), and diatoms (bacillariophyceze), respectively, on a smooth surface. The antifouling efficiency on a roughened surface with micro/nanostructures can be further enhanced by another 75%. This approach can be potentially utilized in coastal constructions, offshore facilities, and vessels that are either moving or stationary in port.

Dipolar molecules inside C70: an electric field-driven room-temperature single-molecule switch

Abstract: We propose a two-state electric field-driven room-temperature single-molecule switch based on a dipolar molecule enclosed inside ellipsoidal fullerene C70. We show that the two low-energy minima of the molecular dipole inside the C70 cage provide distinguishable molecular states of the system that can be switched by application of an external electric field.

Charge collection studies in irradiated HV-CMOS particle detectors

Abstract: Charge collection properties of particle detectors made in HV-CMOS technology were investigated before and after irradiation with reactor neutrons. Two different sensor types were designed and processed in 180 and 350 nm technology by AMS. Edge-TCT and charge collection measurements with electrons from 90Sr source were employed. Diffusion of generated carriers from undepleted substrate contributes significantly to the charge collection before irradiation, while after irradiation the drift contribution prevails as shown by charge measurements at different shaping times. The depleted region at a given bias voltage was found to grow with irradiation in the fluence range of interest for strip detectors at the HL-LHC. This leads to large gains in the measured charge with respect to the one before irradiation. The increase of the depleted region was attributed to removal of effective acceptors. The evolution of depleted region with fluence was investigated and modeled. Initial studies show a small effect of short term annealing on charge collection.

A Charge Transfer Model for CMOS Image Sensors

Abstract: Based on the thermionic emission theory, a charge transfer model has been developed which describes the charge transfer process between a pinned photodiode and floating diffusion (FD) node for CMOS image sensors. To simulate the model, an iterative method is used. The model shows that the charge transfer time, barrier height, and reset voltage of the FD node affect the charge transfer process. The corresponding measurement results obtained from two different test chips are presented in this paper. The model also predicts that other physical parameters, such as the capacitance of the FD node and the area of the photodiode, will affect the charge transfer. Furthermore, the model can be extended to explain the pinning voltage measurement method and the feedforward effect.

Controlling Bragg gaps induced by electric boundary conditions in phononic piezoelectric plates

Abstract: A Phononic Crystal (PC), constituted of a homogeneous piezoelectric plate covered by a 1D periodic arrangement of thin metallic electrodes on both surfaces, is studied. The application of Electric Boundary Conditions (EBCs) on the electrodes enables the propagation control of the ultrasonic guided waves in the PC. The band structure is investigated for different EBCs: the electrodes are either at a floating potential or they are alternately short-circuited and at a floating potential. In the latter case, a Bragg gap appears for the fundamental S0 guided Lamb mode. These results are verified experimentally and compared to finite element calculations. A physical interpretation is also given, relying on the symmetry of the electric potential fields associated with these guided modes.

4H-SiC Trench MOSFET With L-Shaped Gate

Abstract: A novel 4H-SiC trench metal–oxide–semiconductor field-effect transistor (MOSFET) with an L-shaped gate (LSG) is proposed and studied via numerical simulations in this letter. Adoption of an additional LSG region that surrounds the bottom corner of the trench allows the peak electric field in the SiO2 dielectric to be significantly relieved by charge compensation, and the device breakdown voltage can be greatly enhanced without causing significant degradation of the output characteristics. In high-voltage blocking states, the electric field at the bottom corner of the trench is weakened, which leads to improved device performance. The peak electric field value in the SiO2 dielectric decreases by 32.3% when compared with that of a conventional 4H-SiC trench MOSFET, while the breakdown voltage increases by 80.4%.