Showing papers on "Electrode array published in 1981"

Speech processing method and apparatus

Abstract: Signal processing system for converting a speech signal into a data signal for controlling a hearing prosthesis having an implanted electrode array adapted to stimulate the auditory nerve fibers of a patient by the application of electrical currents to selected electrodes in the array. The system generates an input signal current corresponding to a received speech signal. The amplitude and frequency of the fundamental voicing component of the speech signal is approximated as are the amplitude and frequency of at least one formant of the speech signal. A programmable microprocessor produces instructions which cause the application of electrical currents to selected groups of electrodes in the array with or without delays between the stimulation of each electrode in the groups. The microprocessor is programmable with data defining a predetermined relationship between each group of electrodes and a selected range of at least one formant frequency and with data defining a predetermined relationship between another formant frequency and the delay between stimulation of each electrode in each said group based on psychophysical testing of the patient. Selection of electrodes based on the estimated frequency of the formants produces the desired percepts in the auditory-like sensations generated in the patient. The microprocessor is further programmable to produce data which determines the level of stimulation of each selected group of electrodes and determines the delay between stimulation of electrodes in each group dependent on the estimated amplitude of formants of the speech signal as well as on predetermined data relating to the sensitivity of each electrode implanted in the patient.

Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode

Abstract: A vertical MOSFET includes source and gate electrodes on a major semiconductor surface, and a drain electrode on an opposing semiconductor surface. A shield electrode is disposed in proximity to the gate electrode so as to minimize feedback capacitance between the gate electrode and drain region. Additionally, the shield electrode increases the level of space charge limited current that can be supported in the drain region, and minimizes current crowding in the device.

A Josephson voltage standard using a series array of 100 junctions

Abstract: Levinsen et al. have suggested that the voltage level of the Josephson-effect voltage standard might be increased by using a series array of highly hysteretic junctions which have rf-induced steps crossing the zero current axis. If the Phase lock condition which yields quantization is stable then biasing the array at zero current insures that the voltage across each junction will be quantized, eliminating the need to individually bias the junctions. Here we describe the design and operation of a 100 junction array fabricated using photolithography. The array produced stable quantized voltages up so 27 mV when operated at 20 GHz.

Method and apparatus for plasma etching

Abstract: A method and an apparatus for plasma etching semiconductor materials by providing an intermediate electrode between the electrodes in a parallel state type plasma etching apparatus, moving the intermediate electrode by a drive mechanism, and continuously changing from a condition of high input power and high self-bias voltage to a condition of low input power and low self-bias voltage while varying the distance between the intermediate electrode and the first electrode and the RF power, thereby to remove damage or deposits that may have been formed on the surface when the semiconductor material was being subjected to processing.

Voltage source for ion current measurement in an internal combustion engine

Abstract: A voltage source for measurement of pressure fluctuations in internal combustion engine cylinders by current detected between the electrodes of the sparkplug after the spark has died down, is derived from the ignition voltage. A capacitor can be charged to a voltage of a few hundred volts for this purpose in various ways, and either a positive or a negative measurement voltage can be provided with respect to ground across a measuring resistor for further processing. Very few additional components are required. It is possible to provide a voltage that is continuously available for the convenience of timing the measurement and for the capability of making the measurement and all of the cylinders of the engine.

Bipolar ionic current probe unit and method for measuring positive and negative current densities by means of the same probe unit

Abstract: A tri-electrode probe consisting of a central electrode and a pair of measuring electrodes on the opposite sides of the central electrode disposed so as to symmetrically cover an immaginary surface having a plane of symmetry, is connected to a measuring system including minute current ammeters and a variable D.C. voltage source, the tri-electrode probe is positioned at a measuring point within an electric field where both positive and negative ions coexist as oriented in such direction that the plane of symmetry is directed in perpendicular to the direction of the electric field with one of the measuring electrodes opposed to a negative ion source and the other measuring electrode opposed to a positive ion source, a current flowing through the minute current ammeter connected to the central electrode is made substantially zero by varying the voltage of the variable D.C. voltage source, at that moment the current values indicated by the minute current ammeters connected to the measuring electrodes are read out, and positive and negative ionic current densities in the electric field are determined on the basis of the read current values.

Temperature compensated polarographic oxygen gas sensor and sensing system, particularly for automotive application

Abstract: To render output of a polarographic sensor essentially independent of aging of electrodes and temperature effects of the solid electrolyte body, within the operating ranges of the sensor to measure the oxygen composition of exhaust gases, the solid electrolyte plate of, for example, 50 mm length, 8 mm width and 1 mm thickness has a sensing electrode system including a cathode (2), and an anode (3) applied thereto, connected to a voltage source (7) of controllable output voltage. An oxygen molecule diffusion barrier (6) is applied to the cathode electrode. Additionally, a further electrode pair (5,4) is applied to the solid electrolyte body (1), serially connected in the current limiting circuit including the control voltage source. The voltage across one (2,3) of the electrode pairs is measured and compared with the voltage across the other electrode pair (4,5) voltage source, since the resistance of the zirconium solid electrolyte body drops with increasing temperature at roughly the same rate as the increase in limit current flow with increasing temperature. Both electrode pairs (2,3; 4,5) on the solid electrolyte body (1) are exposed to the gases, the oxygen content of which is to be analyzed.

Method and system for dual control of resistance welding

Abstract: A method and system for controlling resistance welding whereby the preferred quality of resistance welding can be ensured automatically during the welding process by controlling the electrode pressure so that the electrode resistance changes in accordance with a reference resistance curve, or by additionally controlling the electrode voltage so that the electrode voltage changes in accordance with a reference voltage curve. The system according to the present invention comprises an electrode voltage sensor, an electrode current sensor, a reference resistance generator, a reference voltage generator, a differential amplifier, a pressure control device, a current controller and so on.

Driving device and method for matrix-type display panel using guest-host type phase transition liquid crystal

Abstract: An apparatus and a method for driving a guest-host type phase transition liquid crystal in matrix is disclosed in which X and Y electrodes in matrix comprising a guest-host liquid crystal made by adding a pleochroic dye to the cholesteric-nematic phase transition liquid crystal or chiralnematic phase transition liquid crystal are impressed with an X electrode selecting voltage, an X electrode non-selecting voltage, a Y electrode selecting voltage and a Y electrode non-selecting voltage selectively thereby to apply a holding voltage for holding the display condition of the liquid crystal cells of the liquid crystal display elements and a write-in voltage for new write-in. The region where the display condition is to be erased is designated in the liquid crystal display panel. The X and Y electrodes in that region are impressed with the X electrode non-selecting voltage, the other Y electrodes are impressed with the Y electrode selecting voltage, the other X electrodes are impressed with an erasure holding voltage having a continuously repetitive pulse waveform including one cycle of the Y electrode non-selecting voltage and three cycles of Y electrode selecting voltage, so that the liquid crystal cells in the designated region are supplied with the erasure voltage and the other liquid crystal cells are supplied with the holding voltage, thus erasing the designated region alone.

Electrode structures and electrooptic light gate systems

Abstract: An article of manufacture, such as an electrically actuable light gate structure, includes a substrate which may comprise an electrooptically active solid-state light gate material. Spaced parallel electrodes are subdivided on that substrate into first and second electrode arrays alternating along an elongate region of the substrate. Individual terminals for the electrodes in each first electrode array are distributed along a line on one side of the elongate region, and individual terminals for the electrodes in each second electrode array are distributed along a line on the opposite side of the elongate region of the substrate. Any individual terminal of any one of the electrodes is spaced from the individual terminal of any other electrode by a center-to-center distance greater than the center-to-center spacing between that one electrode and the latter other electrode.

Semiconductor memory drive

Abstract: An improved semiconductor memory device is provided, which has: (i) a first gate electrode in an electrically floating state, at least a part of which confronts a channel region of a semiconductor device and which is separated by an insulating layer from the channel region; (ii) a second gate electrode (i.e., a control electrode), at least a part of which confronts the first gate electrode and is separated by an insulating layer from the first gate electrode; and (iii) a third gate electrode (i.e., an erasing electrode), at least a part of which confronts the first gate electrode and is separated by an insulating layer from the first gate electrode. The insulating layer, separating at least a part of the erasing electrode from the first gate electrode, has a thickness (usually 50 to 300 A) sufficient to allow the passage of charges from the first gate electrode to the erasing electrode through a tunneling effect, thereby discharging the first gate electrode.

Air ionization devices.

Abstract: An air ionization device for generating negative ions comprises an electrode (14), and a circuit including a transformer (5) and voltage-doubler rectifier circuits (7,8) for producing from a relatively low voltage source (1,2) a negative voltage for application to said electrode (14) of sufficient magnitude to cause a corona discharge and produce negative ions at said electrode (14), said electrode (14) being formed of carbon fibre filaments (16).

Method and device for determining quality in resistance welding

Abstract: A device (for example, Figure 6) according to the invention and employing a suitable method defines the welding quality achieved in a resistance-welding operation as "good" or "reject" by independently or simultaneously comparing the values obtained in each case for the electrode voltage, the electrode current flow time, the number of electrode voltage pulses above an initial value and/or the integral of a difference between the excess of the electrode voltage with respect to a basic voltage and said basic voltage with appropriate reference values, and, in addition, by also comparing the resistance measured between the electrodes (2a, 2b) with a reference resistance value. The relatively inexpensive device determines the welding quality with high precision even if shunt current paths are produced by deformed or pinched electrode tips.

Semi-conductor floating gate memory cell with write and erase electrodes

Abstract: 1. Floating-gate storage cell consisting of an n-channel field-effect transistor whose potentially floating gate electrode comprises a first electrode part which, for effecting the tunnel injections of electrons into the gate electrode (1), is coupled capacitively to a writing electrode (4), as well as a second electrode part of polycrystalline silicon which, for effecting the tunnel emissions of electrons from said gate electrode (1) during the erasing operation, is coupled capacitively to an erasing electrode (3), characterized in that moreover said gate electrode (1) is coupled capacitively to a programming electrode (2), that said writing electrode (4) is connected directly in a barrier-free contact to the drain zone (5) of the field-effect transistor, and that the coupling capacitance of said programming electrode (2) towards said gate electrode (1) is greater than that of said writing electrode (4) towards said gate electrode (1) and greater than that of said erasing electode (3) towards said gate electrode (1).

Bipolar element having a non-linear conductivity characteristic, and commutating device incorporating the same

Abstract: A bipolar element having a non-linear conductivity characteristic is constituted by a semiconductor body placed between two dielectric layers, a source electrode, a drain electrode and a grid electrode. The grid electrode is constituted by a first grid electrode part electrically connected to the drain electrode and a second grid electrode part electrically connected to the source electrode. This bipolar element is adapted to be used as a commutating component, especially in visualization or display devices.

Constant current source

Abstract: A constant current generating circuit is provided which comprises first, second, third and fourth transistors of one conductivity type, each having base, emitter and collector electrodes, and a voltage supply source having first and second voltage terminals. In this case, the collector and emitter electrodes of the first transistor are respectively connected to the first and second voltage terminals with a first impedance between the collector electrode and first voltage terminal; the emitter electrode of the second transistor is connected to the second voltage terminal through a second impedance; the emitter electrode of the third transistor is connected to the second voltage terminal through a third impedance; the emitter electrode of the fourth transistor is connected to the second voltage terminal; the base electrode of the first transistor is connected to the emitter electrode of the second transistor; the collector electrode of the first transistor is connected commonly to the base electrodes of the second and third transistors; the emitter electrode of the third transistor is connected to the base electrode of the fourth transistor; and a current utilizing means is connected between the first voltage terminal and at least one of the collector electrodes of the second, third and fourth transistors.

One-dimensional scanner

Abstract: A one-dimensional scanner for use in an image reader in which the pitch of the electrode elements is reduced to increase the image density. An upper electrode array has a plurality of upper electrode elements arranged at a predetermined pitch and spacing in a one-dimensional scanning direction while a lower electrode array similarly has a plurality of lower electrode elements arranged at a predetermined pitch and spacing in the one-dimensional scanning direction in an opposed, spaced and staggered relation with respect to the upper electrode elements wherein each lower electrode element is positioned across two adjacent upper electrode elements thereby defining a picture element region therebetween. A layer of material such a photosensitive material, a layer having an electro-optical effect, or a layer of electric-radiant-energy-converting material is disposed between the upper and lower electrode arrays. A scanning device is provided which selects respective pairs of the upper and lower electrode elements which overlap each other sequentially in the one-dimensional scanning direction. At least one of the upper and lower electrodes is light transmissible.

Flat type electric discharger for electrophotographic copier

Abstract: PURPOSE:To prevent sticking of moisture and to obviate the change in electric discharge characteristics according to environments by forming either one of electrodes for excitation and discharge of a flat type electric discharger of a resistor for the purpose of heating and applying an electric power source for heating. CONSTITUTION:With an insulator 2 of glass or the like in-between, an exciting electrode 1 formed of a resistor is provided by facing electric discharge electrodes 3 of a rectangular strip shape. An electric power source 5 for heating is also applied to the electrode 1 other than an electric power source 4 for driving, by which the electrode 1 is heated to remove moisture satisfactorily. Thus the sticking of moisture upon the insulator 2, etc. is prevented and the change in discharge characteristics according to environmemts is obviated.

Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing

Abstract: The present invention relates to storage devices which utilize a floating single crystal electrode onto which elcetrons are injected to vary the capacitance of a device which includes capacitance contributions from a pair of insulator regions and that resulting from the uncharged floating single crystal electrode. The memory cell includes at least a pair of other electrodes one of which is utilized to provide two voltage levels to cause injection of electrons and provide an interrogation or read pulse. The other of the pair is utilized as a sense electrode which capacitively senses current when a read pulse is applied to the device via a control electrode. A second embodiment utilizes a pair of injector electrodes, a separate control electrode and a sense electrode in addition to the single crystal floating electrode. A memory array incorporating a device using the single crystal floating electrode is also disclosed.

Therminoic fault current limiter and method of current limiting

Abstract: A thermionic fault current limiter utilizes either a vacuum or plasma environment for a plurality of spaced conduction electrodes. The electrode can be supported by insulative spacers with the electrode providing shadow shields for the supporting spacers. Electrode spacing, power density, temperature gradients, and control grids can be utilized for optimum operation and in establishing self-absorption of energy for a desired operating environment. Cesium desorption from the electrode surfaces can be utilized to enhance current termination.

Detector array retaining and positioning system

Abstract: Improved end blocks for the electrode array of a multicell radiation detector support the array and isolate it from the interior walls of an enclosed ionization chamber. A plunger extends from the rear wall of each end block and is biased by a spring within the end block to bear against the rear wall of the detector chamber, biasing the electrode array forwardly against front spacers to position the front edges of the electrodes in equidistantly spaced relation to a x-ray transmissive window formed in the front wall of the detector housing. The bias exerted by the springs is adjustable. A tool is inserted into each end block during assembly of the detector to retract the plungers while the array is being positioned within the opened ionization chamber. The invention greatly reduces noise in the detector caused by microphonics, thus improving the integrity of the detected signal and permitting shorter scanning times and other advantages.

Electrode clamping device for electro-remelting plant - has independent adjustment drives for orienting electrode with respect to carrier

Abstract: Electrode clamp for an electro-remelting plant comprises an electrode carrier and an electrode holder for gripping the electrode. Independently controllable drives connect the holder to the carrier to enable the position of the electrode to be adjusted about mutually perpendicular axes, both before and uring a remelting process without having to touch the electrode. Adjustment of the angular posn of an electrode in an electro remelting process maintains the electrode centred in the molten metal bath. The process may be effected in an electroslag remelting plant for a vacuum arc remelting plant.