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Showing papers on "Electrode array published in 1988"


Patent
26 Aug 1988
TL;DR: In this article, an improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region to reorient the electric field associated with those charges toward the gate electrode and transverse to the direction of current flow through the device.
Abstract: An improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region. In response to an appropriate bias, the control electrode couples to the electric field originating on charges within the voltage supporting region to reorient the electric field associated with those charges toward the gate electrode and transverse to the direction of current flow through the device. Improved control of the electric field within the voltage supporting region allows the doping concentration, and hence the conductivity of the channel, to be improved without a concomitant decrease in breakdown voltage. Accordingly, the channel width and cell repeat distance of the improved device can be reduced, allowing for an improved current density to be established throughout an overall device cell structure. The charge control region of the voltage supporting layer exhibits an aspect ratio of 0.5.

307 citations


PatentDOI
TL;DR: An electrode array for implantation in a human cochlea includes a spiral-shaped resilient carrier, which generally conforms to the shape of the scala tympani of the cochlesa as mentioned in this paper.
Abstract: An electrode array for implantation in a human cochlea. The array includes a spiral-shaped resilient carrier which generally conforms to the shape of the scala tympani of the cochlea. The carrier supports eight electrode pairs, with each electrode having an associated lead. The leads are arranged in the carrier to form a central rib structure which controls flexing of the array. The individual leads have an elongated cross-section and are individually vertically aligned in the rib structure, so that the array will readily flex in the plane defined by the array spiral. The structure limits flexing in the vertical direction. The restricted flexing serves to avoid injury to the basal membrane located at the upper surface of the scala tympani during implantation.

194 citations


Journal ArticleDOI
TL;DR: A technique has been developed in which a planar array of 32 microelectrodes is used to record from and stimulate the hippocampal slice preparation at multiple sites, providing a 2-dimensional description of the underlying population activity in the various pyramidal strata and subpopulations.

118 citations


Patent
31 May 1988
TL;DR: In this article, a capacitive type measuring apparatus comprises first and second electrode arrays mounted on first-and second support members which are relatively displaceable with respect to each other.
Abstract: A capacitive type measuring apparatus comprises first and second electrode arrays mounted on first and second support members which are relatively displaceable with respect to each other. The first electrode array comprises a series of discrete first electrodes uniformly spaced with a pitch P r defining a scale wavelength and the second electrode array comprises a series of discrete second electrodes arranged so as to define a plurality of electrode groups each having N electrodes, where N is an integer greater than 2. The second electrodes forming each of the electrode groups are positioned within the respective groups so as to respectively occupy predetermined group positions which are distributed over a distance spanning more than one scale wavelength such that each of the group positions corresponds to the relation position of a different one of a set of relative scale wavelength segment positions obtained by dividing the group into intervals corresponding to the scale wavelength, and dividing each interval into N equal segments.

72 citations


Patent
28 Jul 1988
TL;DR: In this paper, a surface conduction electron-emitting device is provided which comprises a high-potential electrode (1) provided on a substrate surface, an electron emitting region (4, 4a, 4b) provided in contact with the periphery of an exposed part of the high potential electrode, and a lowpotential electrodes (2a, 2b) further provided by the electron emitting region.
Abstract: A surface conduction electron-emitting device is provided which comprises a high-potential electrode (1) provided on a substrate surface, an electron-emitting region (4, 4a, 4b) provided in contact with the periphery of an exposed part of the high-potential electrode, and a low-potential electrode (2a, 2b) further provided in contact with the periphery of the electron-emitting region. The low-potential electrode may project upward in the thickness direction of the substrate to a higher level than the high-potential electrode. A means for applying a voltage may further provided between the high-potential electrode and low-potential electrode. The low-potential electrode may be divided into plural numbers and potential may be applied to each of the low-potential electrodes independently.

49 citations


Patent
25 Oct 1988
TL;DR: In this paper, a driving apparatus consisting of a driving unit and a drive voltage generating unit is described, which includes a scanning electrode driver and a data electrode driver for driving an electrode matrix formed of scanning electrodes and data electrodes.
Abstract: A driving apparatus comprises a driving unit and a drive voltage generating unit. The driving unit includes a scanning electrode driver and a data electrode driver for driving an electrode matrix formed of scanning electrodes and data electrodes. The drive voltage generating unit includes a first means for generating a fixed voltage, a second means for generating a source voltage for providing drive voltages for driving the electrode matrix, and a third means for generating a first voltage equal to a subtraction of the fixed voltage from the source voltage and a second voltage equal to a subtraction of the source voltage from the fixed voltage. The first and second voltages are preferably controlled so as to vary depending on an external temperature.

40 citations


Patent
12 Oct 1988
TL;DR: In this article, an electron beam emitting device is defined as a surface conduction type of thin film device having an electron emitting area and at least a pair of electrodes for passing current through the emitting area, and a voltage applicator for applying a voltage independently on each of the electrodes.
Abstract: An electron beam emitting device, includes a surface conduction type of thin film device having an electron emitting area and at least a pair of electrodes for passing current through the electron emitting area, and a voltage applicator for applying a voltage independently on each of the electrodes, the voltage applicator applying a voltage on each electrode so that each of the electrodes may become higher or lower in potential relative to the other electrode.

37 citations


Patent
30 Aug 1988
TL;DR: In this article, an array of electrodes suitable for use as an auditory prosthesis is presented, consisting of an electrode body formed from an electrically insulating flexible material, with the surface of each electrode being recessed and being exposed.
Abstract: The invention provides an array of electrodes, suitable for use as an auditory prosthesis. The array comprises an electrode body formed from an electrically insulating flexible material, preferably at least one annulus of an electrically insulating flexible material which is formed separately from the body and adhered thereto, at least one electrode positioned concentrically about each of the at least one annulus or electrode body, with the surface of each electrode being recessed and being exposed. The invention also provides a method for fabricating such an electrode array.

36 citations


Journal Article
TL;DR: Studies have been undertaken to confirm the biologic safety of the Cochlear Corporation multi-electrode intracochlear implant.
Abstract: Studies have been undertaken to confirm the biologic safety of the Cochlear Corporation multi-electrode intracochlear implant. The materials used are biocompatible. The electrode array is flexible: it can be inserted with minimal or no trauma, providing the insertion is stopped when resistance is first felt. An atraumatic insertion is facilitated if a good view is obtained along the scala tympani of the basal turn of the cochlea by drilling through the crista fenestrae. The passage of the electrode around the cochlea can be facilitated if the electrode is rotated during insertion (clockwise for the left and anticlockwise for the right cochlea). The electrode can be explanted and another one reinserted with minimal or no trauma. A seal established around the electrode after an implantation period of 2 weeks can prevent infection extending from the middle to the inner ear. The electrical stimulus parameters produced by the Nucleus receiver-stimulator cause no loss of spiral ganglion cells or corrosion of the platinum band electrodes. Long-term stimulation has been carried out for up to 8 years in patients without affecting their clinical performance.

36 citations


Patent
30 Sep 1988
TL;DR: In this paper, the authors proposed to place the one current electrode in the center of a line connecting the sensor electrodes in an integrable Hall element, which includes a semiconductor layer of a single conductive type.
Abstract: In an integrable Hall element, which includes a semiconductor layer of a single conductive type, a plurality of current electrodes adapted for being connected to an energy source, and wherein at least one current electrode and two sensor electrodes are located on a surface of the Hall element, and the one current electrode has a first connecting contact forming a first energy source pole, the improvement consists in the one current electrode being approximately located in the center of a line connecting the sensor electrodes. The remaining current electrodes are distributed current electrodes which have a second connecting contact, and a second energy source pole is formed by the distributed current electrodes; the distributed electrodes are so located with respect to the one current electrode so that all currents flowing between the one electrode and the distributed electrodes form a resultant current vector extending in the vicinity of the one current electrode substantially at right angles to the surface of the semiconductor layer.

33 citations


Patent
12 Sep 1988
TL;DR: In this article, a photo-sensor has a pair of main electrodes found on a semiconductor layer with an auxiliary electrode arranged there between the two main electrodes, with an insulating area being interleaved therein, used for stabilizing the photosensing output and providing a signal proportional to the incident light.
Abstract: A method for driving a photo-sensor to produce an improved, stable output which exactly represents the incident light is disclosed The photo-sensor has a pair of main electrodes found on a semiconductor layer with a photo-sensing area arranged therebetween A semiconductor layer and an auxiliary electrode are formed on at least the photo-sensing area with an insulating area being interleaved therein The auxiliary electrode is used for stabilizing the photosensing output and providing a signal proportional to the incident light The method of driving such a photo-sensor includes applying a bias voltage to the auxiliary electrode in accordance with the carriers carrying a current of the semiconductor layer A voltage of the same polarity as that of the bias voltage, but smaller in absolute value, is applied to the auxiliary electrode for a predetermine period of time in a non-read period of the photo-sensor to cause a next photo-sensor output to be read while a previous photo-sensor has been erased

Patent
23 Sep 1988
TL;DR: In this article, a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion was proposed, where an electron beam is irradiated to an object to be tested to induce a voltage, and then the voltage is measured and tested from the voltage thus induced and the voltage measured thereafter.
Abstract: This invention concerns a method and an apparatus for measuring and testing the electric characteristic of a semiconductor device in a non-contact fashion. For conducting measurement and testing in a non-contact fashion, an electron beam is used to induce a voltage, on a semiconductor device which is an object to be tested (an object to be measured.) By changes with lapse of time of the induced voltage, the electric characteristic, of the semiconductor device are determined. Thus, an electron beam is irradiated to an object to be tested to induce a voltage thereafter to examine changes in the induced voltage. Then, the electric characteristic of the semiconductor device is measured and tested from the voltage thus induced and the voltage measured thereafter.

Patent
02 May 1988
TL;DR: In this article, a method and apparatus for processing a plurality of signals provided by an array of electrodes disposed on the surface of the body further comprising a reconstruction of the electrical activity of a selected interior organ according to the plurality of array signals and a selected model of the human body in the region of the interior organ and the electrode array is presented.
Abstract: A method and apparatus for processing a plurality of signals provided by an array of electrodes disposed on the surface of the body further comprising a reconstruction of the electrical activity on the surface of a selected interior organ according to the plurality of array signals and a selected model of the body in the region of the interior organ and the electrode array. The reconstruction includes assumptions made according to a priori knowledge of the selected model and permits reconstruction of the electrical activity on the surface of the interior organ and can further provide practical solutions with underdetermined sets of equations. The present inventions further includes reconstruction including a power spectrum analysis of the array signals to permit detection and localizing of a predetermined physiological condition. The power spectrum analysis may further include a frequency domain analysis according to the minimum relative entropy of the measured signals.

Patent
10 Mar 1988
TL;DR: In this paper, an electro-discharge machining apparatus includes an electrode carrier on which there are mounted a plurality of separate electrodes, and a circuit for each electrode applies a high voltage discharge initiating pulse followed by an extended lower voltage discharge sustaining pulse to the associated electrode.
Abstract: An electro-discharge machining apparatus includes an electrode carrier on which there are mounted a plurality of separate electrodes. A circuit for each electrode applies a high voltage discharge initiating pulse followed by an extended lower voltage discharge sustaining pulse to the associated electrode. A gap voltage sampling circuit samples the voltage between the electrode and the workpiece and a "low wins" circuit passes a signal representing the lowest gap voltage as a feedback signal for a servo-actuator which moves the electrode holder towards and away from the workpiece.

PatentDOI
Tiao-Yuan Huang1
TL;DR: In this paper, a high voltage thin film transistor comprising a substrate upon which is supported a non-single crystal semiconductor active layer, spaced from a pair of conductive gate electrodes by a gate dielectric layer, wherein one of the gate electrodes is the device control electrode and the other is a dummy-drain electrode.
Abstract: A high voltage thin film transistor comprising a substrate upon which is supported a non-single crystal semiconductor active layer, spaced from a pair of conductive gate electrodes by a gate dielectric layer, wherein one of the gate electrodes is the device control electrode and the other is a dummy-drain electrode. Heavily doped semiconductor source and drain electrodes are in substantially alignment with the outer edges of the gate electrodes, the source electrode being aligned with the device control electrode and the drain electrode being aligned with the dummy-drain electrode. The active layer has intrinsic or virtually intrinsic region thereof in opposition to the bodies of each of the gate electrodes, and an offset region, between the gate electrodes, having a lower dopant level than the source and drain electrodes, which is aligned with the inner edges of the gate electrodes.

Patent
18 Mar 1988
TL;DR: In this paper, an integrated device for scanning a laser beam, including a substrate (12), an electro-optic waveguide (14), a Bragg grating electrode array (31), in operative contact with the waveguide, and a array of electro-Optic prisms (33), is presented.
Abstract: An integrated device (10) for scanning a laser beam, including a substrate (12). An electro-optic waveguide (14), a Bragg grating electrode array (31) in operative contact with the waveguide, and a array of electro-optic prisms (33). The electrode array (31) includes a plurality of upper grating electrodes (26) and a lower first electrode (32). A voltage potential can be placed across individual upper grating electrodes (26) and the lower electrode (32) to establish up a Bragg grating in a small localized region. This localized Bragg grating diffracts a laser beam carried by the waveguide and creates a spatially-variable diffracted beam (40) which can be continuously scanned by deflecting the diffracted beam (40) with the electro-optic prism array (33). The integrated device can also perform two dimensional scanning by including an array of small period diffraction gratings (61), to diffract the laser beam (24) out of the plane of the waveguide film (14), or an array of hologram facets (51) to map a set of points defined by the hologram facets (51) into a two-dimensional matrix of points.

Patent
03 Oct 1988
TL;DR: In this paper, an approach for detecting the amount or presence of material in a detection zone comprising a first electrode, input signal means for supplying an electric input signal to the first electrode; a second, smaller electrode parallel to the second electrode; the detection zone being located between the first and second electrodes; a third electrode which is larger than the second and substantially surrounds the second electrodes in a plane parallel to first electrode.
Abstract: Apparatus for detecting the amount or presence of material in a detection zone comprising a first electrode, input signal means for supplying an electric input signal to the first electrode; a second, smaller electrode parallel to the first electrode; the detection zone being located between the first and second electrodes; a third electrode which is larger than the second electrode and substantially surrounds the second electrode in a plane parallel to the first electrode, and receiving means for detecting signals on the second electrode, the signal on the second electrode being responsive to material in the zone. The second and third electrodes are not electrically connected but are maintained at near the same electric potential whereby the electric field between the first and second electrodes is, in use, substantially linear and fringing fields, if any, occur only between first and third electrodes at their outer edges.

Patent
01 Apr 1988
TL;DR: In this paper, a salinity measuring apparatus utilizes a specialized probe with dual electrode pairs, one of the pairs being used to pass current through the electrolyte, while the other picks up voltage drop across a region in electrolyte and feeds it back to the current producing amplifier, which adjusts the current output until a stabilized, predetermined voltage difference occurs across the voltage electrodes.
Abstract: A salinity measuring apparatus utilizes a specialized probe with dual electrode pairs, one of the pairs being used to pass current through the electrolyte, while the other picks up voltage drop across a region in the electrolyte and feeds it back to the current producing amplifier, which adjusts the current output until a stabilized, predetermined voltage difference occurs across the voltage electrodes. The circuit which drives the current between the current electrodes produces a positive pulse, and an ensuing negative pulse, which are sequentially applied across the electrodes so that two separate measurements are made using pulses of opposite polarity to cancel out electrode polarizations. An amplifier circuit receives a pulse from the voltage source and applies it to the electrodes. A second amplifier circuit picks up a voltage across a voltage dropping resister in series with the resistance of the electrolyte between the current electrodes, and amplifies this voltage drop for outputting to a signal register and processing means. A polarity reversal system is used at the output of the second amplifying circuit so that all of the processed pulses which output from the system have the same polarity despite the fact that internally in the apparatus the polarity is reversed. The pulse is transferred to the first amplifier circuit by a capacity charged transfer technique so that the system is electrically isolated from the pulse generator, and a second capacity transfer at the system output isolates the system from the output signal register and processing device.

Patent
30 Jun 1988
TL;DR: In this paper, a spacer film and an electrode for joining electric field control with a voltage higher than the potential of an electrode were applied to suppress the optical characteristic deterioration of a reflecting film and the electric characteristic degradation of an electrodes which is used for electrostatic capacity detection, electrostatic driving, etc.
Abstract: PURPOSE: To suppress the optical characteristic deterioration of a reflecting film and the electric characteristic deterioration of an electrode which is used for electrostatic capacity detection, electrostatic driving, etc., by applying a spacer film and an electrode for joining electric field control with a voltage higher than the potential of an electrode for electrostatic joining and performing electrostatic joining. CONSTITUTION: An electrode 50 which shields the reverse surface of an upper electrode 20 (the surface where a joining electrode 40 exists) from an electric field from the electrode 40 is formed so as to prevent a joining current from flowing to the reflecting film 21 or electrode formed on the surface of upper glass 20 and while the electrode 50 is applied with the voltage higher than the potential of the joining electrode 40, the joining is performed. Consequently, the joining current which flows through the reflecting film 21 or electrode formed on the surface of the upper electrode 20 is suppressed and the deterioration in the electrostatic joining is reduced. COPYRIGHT: (C)1990,JPO&Japio

Patent
Kenneth George Freeman1
05 Dec 1988
TL;DR: In this paper, a flat cathode ray tube display apparatus is described where a line scanning, low energy, electron beam is directed substantially parallel to a faceplate carrying a phosphor screen in a space between a deflection electrode array and an input side of an electron multiplier.
Abstract: In a flat cathode ray tube display apparatus a line scanning, low energy, electron beam (18) is directed substantially parallel to a faceplate (12) carrying a phosphor screen (14) in a space between a deflection electrode array (22) and an input side of an electron multiplier (16) adjacent the screen where it is deflected by the electrode array (22) in field scan manner towards the screen. The deflector electrodes (23) in the array correspond in number to the conventional raster lines to be displayed and are switched successively between two voltage levels to step the line scanning beam. The electrodes' voltage switching drive circuit (52) may be carried on a substrate adjacent the electrodes thereby reducing the number of leadthroughs in the tube's envelope (15). For colour display the screen comprises a pattern of different colour phosphor elements and a colour selection electrode arrangement (38) is situated at the output side of the multiplier (16). Three differently coloured, and accurately superimposed, lines are drawn on the screen in a normal line scan period between stepping of the beam.

Patent
Marc H. Popek1
26 Jul 1988
TL;DR: In this article, a bulk acoustic signal processor for processing GHz range R.F. signals employs a transmitter array comprised of an apodized set of subdivided interdigital electrodes mounted on a bulk wave launching crystal, the apodization being defined by the shape of an aperture in a layer of dielectric material on the crystal, over which the electrodes extend into contact with the surface of crystal for stressing the crystal and launching an acoustic wave into the bulk on which the crystal is mounted.
Abstract: A bulk acoustic signal processor for processing GHz range R.F. signals employs a transmitter array comprised of an apodized set of subdivided interdigital electrodes mounted on a bulk wave launching crystal, the apodization being defined by the shape of an aperture in a layer of dielectric material on the crystal, over which the electrodes extend into contact with the surface of crystal for stressing the crystal and launching an acoustic wave into the bulk on which the crystal is mounted. Because a respective subdivided set of interdigital electrode elements has an impedance on the order of 0.5 to 6 ohms, each set is driven by a dedicated, impedance-transforming GaAs FET source-follower amplifier. When driven by an R.F. input signal, the respective sets of driver electrodes launch a focused set of acoustic waves which effectively spatially combine with one another to form a directed bulk wave whose direction of travel in the bulk is proportional to the input frequency and whose intensity is sufficient to enable the input energy to be detected by a spaced apart receiver electrode array. The receiver electrode array, similar to its transmitter counterpart, is formed of a plurality of interleaved electrode layers or fingers which extend over the layer of dielectric atop the lithium niobate crystal and into a receiver array aperture in the dielectric layer into contact with the surface of the crystal.

Journal Article
TL;DR: The findings indicate that Wave I was enhanced substantially when using the disposable ear canal electrode compared with the more conventional forehead-to-mastoid electrode configuration for both normally and abnormally hearing subjects.
Abstract: In this study a disposable ear canal electrode and stimulus delivery system (the Enhancer l) was evaluated for its clinical utility and the observed enhancement of the auditory brainstem response Wave I with its use. Data were collected from normally and abnormally hearing subjects, with both the conventional forehead-to-mastoid electrode array and the forehead-to-ear canal electrode arrangement provided by the Enhancer I ear canal electrode setup. For the normally hearing group, simultaneous acquisition of forehead-to-ipsilateral ear canal and forehead-to-ipsilateral mastoid electrode linkages was obtained. For the abnormally hearing subjects, a comparison was made between the Enhancer I system and the conventional forehead-to-mastoid electrode configuration used with a TDH-49 transducer for click delivery. Our findings indicate that Wave I was enhanced substantially when using the disposable ear canal electrode compared with the more conventional forehead-to-mastoid electrode configuration for both normally and abnormally hearing subjects. The Enhancer I electrode evaluated in this study proved to be painless for the subjects and extremely easy to use, requiring no more time in subject preparation than the more common surface recording electrode application.

Patent
20 Oct 1988
TL;DR: In this paper, a movable electrode 2 is displaced by acceleration to be detected and electrostatic forces (attracting forces) received from fixed electrodes 3 and 4 are detected with a capacitance detecting part.
Abstract: PURPOSE: To perform nonlinear compensation of an electrostatic servo device without using an expensive circuit by changing the rate of the application time of a voltage for a fixed electrode per unit period, and variably controlling electrostatic forces for returning a movable electrode to a reference position. CONSTITUTION: A movable electrode 2 is displaced by acceleration to be detected and electrostatic forces (attracting forces) received from fixed electrodes 3 and 4. The electrostatic capacitance between the movable electrode 2 and the fixed electrode 3 and the electrostatic capacitance between the movable electrode 2 and the fixed electrode 4 are detected with a capacitance detecting part 5. The output V 0 is inputted into a pulse-width modulator 7 through an amplifier 6. A rectangular wave voltage whose pulse width is changed is outputted in a pulse train shape. The output of the pulse width modulator 7 is applied to the fixed electrode 3. Said output is inverted in an inverter 8 and applied to the fixed electrode 4. The movable electrode 2 is set at a zero potential. The electrostatic forces which are generated in the fixed electrodes 3 and 4 by the applied voltages act as attracting forces for the movable electrode 2. COPYRIGHT: (C)1990,JPO&Japio

Patent
09 Dec 1988
TL;DR: In this article, the authors proposed to form a scanning electrode bus of low-resistance Al having low resistance by executing a film forming stage of the scanning electrodes bus after a gate insulating layer and semiconductor layer which entails a high-temp. process.
Abstract: PURPOSE: To form a scanning electrode bus of Al having low resistance by executing a film forming stage of the scanning electrode bus after a film forming stage of a gate insulating layer and semiconductor layer which entails a high-temp. process. CONSTITUTION: The 1st scanning electrode bus 12 which transmits image signals and the gate electrode 13 of a thin-film transistor are formed of a material, such as Cr or Ta, on a glass substrate 10 by the same film forming stage, then the gate insulating layer 14, the semiconductor layer 15 and an ohmic layer 16 are formed. The 2nd electrode bus 20 which transmits scanning signals, the source electrode 21 and drain electrode 22 of the thin-film transistor are then formed of Al, or low-resistance material contg. Al. The source electrode 13 of the thin-film transistor is connected to the 1st electrode bus 12 through an interlayer contact 19 and the gate electrode 13 is connected to the 2nd electrode bus 20 through an interlayer contact 18. The scanning electrode bus is formed of the low-resistance Al in such a manner and this formation is after the state entailing the high-temp. process; therefore, the generation of problems in the process is obviated. COPYRIGHT: (C)1990,JPO&Japio

Patent
16 Nov 1988
Abstract: An electrode array for an electrooptical facsimile recorder and a method of controlling this electrode array are disclosed. A plurality of spot electrodes are inserted between two main electrodes deposited on a lead lanthanum zirconate titanate (PLZT) substrate. In this manner, three partial lines of electrically controllable light gates are formed which provide a line-at-a-time output of the information to be reproduced. The individual light gates are controlled by driver ICs with push-pull output stages. To control the individual partial lines, different voltages must be applied to the main and spot electrodes.

Patent
28 Oct 1988
TL;DR: In this paper, an electrode is positioned to form a predetermined gap between the electrode and a surface of a work, and the electrodes and the work are submerged in an electrolyte. Pulses are applied to the electrode to machine the work.
Abstract: An electrode is positioned to form a predetermined gap between the electrode and a surface of a work, and the electrode and the work are submerged in an electrolyte. Pulses are applied to the electrode to machine the work. The electric energy of the pulse is set in such a manner that the electric energy per unit area is reduced with increase of the area.

Patent
12 Apr 1988
TL;DR: In this article, the authors proposed a three-layered structure of P, I, and N layers, and provided with a common electrode 1 on the N layer, electrodes 2 and 3 at both surface ends of the P layer, and electrodes 4-1 and 4-2 at optional intermediate parts of the electrodes 1 and 3.
Abstract: PURPOSE: To take a measurement with high accuracy even when a measurement range becomes wide and the length of the element increases by providing an intermediate electrode in the incidence position detection range of the semiconductor position detecting element PSD. CONSTITUTION: This element is constituted in three-layered structure of P, I, and N layers, and provided with a common electrode 1 on the N layer, electrodes 2 and 3 at both surface ends of the P layer, i.e. both ends of the position detection range, and electrodes 4-1 and 4-2 at optional intermediate parts of the electrodes 2 and 3. Then the electrodes 4-1 and 4-2 (or electrodes 4-1 and 2) are short-circuited and output currents are led out of the electrodes 4-1 and 4-2 (or electrodes 4-1 and 3), so that the length from the electrode 4-1 to the electrode 4-2 (or electrode 3) is made to the element length of the PSD. Consequently, when output electrodes are led out of electric power of two optional electrodes among 2, 3, 4-1, and 4-2, this instrument is used as a PSD whose element length is equal to the length of the electrodes. COPYRIGHT: (C)1989,JPO&Japio

Patent
18 Oct 1988
TL;DR: In this paper, a three-terminal capacitance with high and low voltage electrodes coaxially aligned in a housing which serves as a ground plane includes a non-gaseous dielectric material filling the cavity of the housing.
Abstract: A three-terminal capacitor having high and low voltage electrodes coaxially aligned in a housing which serves as a ground plane includes a non-gaseous dielectric material filling the cavity of the housing. In the preferred embodiments, the dielectric is either an oil or plastic. A source of power voltage can be generated by arranging a tertiary electrode proximate to the high voltage electrode and selecting the ratio of surface areas to produce sufficient current to power an external device.

Patent
19 Jan 1988
TL;DR: In this paper, a device for regulating the target voltage (UTI) and the bias voltage (UBI) of radio-frequency sputtering installations was proposed, which can be used to control the voltage component present on the electrodes (3, 9) at a level that can be predetermined.
Abstract: The invention relates to a device for regulating the target voltage (UTI) and the bias voltage (UBI) of radio-frequency sputtering installations. A first electrode (3) and a second electrode (9) are in this case connected to a radio-frequency generator (1). Each of the electrodes (3, 9) is connected to a separate regulating circuit, which holds the DC voltage component present on the electrodes (3, 9) at a level which can be predetermined. These regulation circuits each contain a controllable load (34, 35) which is connected in parallel with the electrode radio-frequency generator path.

Proceedings ArticleDOI
01 Nov 1988
TL;DR: The authors have developed arrays of penetrating electrodes which can form the basis of a visual prosthesis centred around electrical stimulation of the visual cortex which have been implanted into cats to test array insertability and biocompatibility.
Abstract: Electrical stimulation of the visual cortex causes subjects to see spots of light (phosphenes) in their visual fields The authors have developed arrays of penetrating electrodes which can form the basis of a visual prosthesis centred around electrical stimulation of the visual cortex These arrays have been constructed of inert materials, and have been implanted into cats to test array insertability and biocompatibility Tests to determine electrode wire insertion force have also been performed Preliminary acute histological results have shown little cortical damage due to the implants >