Electroless nickel plating

About: Electroless nickel plating is a research topic. Over the lifetime, 1593 publications have been published within this topic receiving 14940 citations.

Multilayer plating film and printed wiring board

Abstract: PROBLEM TO BE SOLVED: To provide a novel treatment method that can be applied to electronic parts, especially a conductor or the like of a printed wiring board and can give excellent soldering property, wire bonding property, etc. thereto. SOLUTION: The printed wiring board is provided with a multilayer plating film wherein an electroless nickel plating film containing 10-13 wt.% phosphorus, an electroless palladium plating film of 0.01-1 μm in thickness and a substitutional gold plating film are piled up in this order. The multilayer plating film is formed in the conductor part of the printed wiring board. COPYRIGHT: (C)2008,JPO&INPIT

Hot-dip galvanizing with electroless ni pre-plating method for controlling thickness of silicon-containing active steel plating

Abstract: The invention discloses an electroless nickel pre-plating and hot post-galvanizing method for controlling the coating thickness of the silicon-containing reactive steel, which means first performing electroless nickel plating and then hot dip galvanizing on a silicon-containing reactive steel part. The electroless nickel pre-plating and hot post-galvanizing method comprises the following processes: (1) doing pretreatment on the surface of the silicon-containing reactive steel part before electroless nickel plating; (2) carry out electroless nickel plating on the surface of the silicon-containing reactive steel part, wherein, the nickel salt used is NiSO4 x 6H2 O, the reducing agent is NaH2PO2 x H2O, and the complexing agent is C6H5Na3O7 x 2H2O; (3) after drying the silicon-containing reactive steel part undergoing electroless nickel plating, conducting hot dip galvanizing on the reactive steel part. The electroless nickel pre-plating and hot post-galvanizing method for controlling the coating thickness of the silicon-containing reactive steel has the advantages of effectively controlling the coating of the hot galvanized silicon-containing reactive steel from thickening exceedingly, thus obtaining a coating with appropriate thickness, smooth surface and good adhesivity, consuming less nickel, and accomplishing the goal of preventing the hot galvanized coating of the silicon-containing reactive steel from excessively thickening by electrolessly plating a nickel coating with a thickness of 3 to 4 microns on the reactive steel part. Moreover, the pre-plate nickel coating can prevent the iron in steel part from dissolving in the zinc bath, thus greatly reducing the formation amount of zinc dross, and reducing the loss of zinc.

Semiconductor device and manufacture therefor

Abstract: PURPOSE:To eliminate the need for carrying out a photolithography process by forming selectively a tungsten film at the base of a contact hole, thereby catalysis-activating its film selectively and then forming a metallic film only to this activated plane through an electroless plating. CONSTITUTION:A contact hole 103 that is formed by etching selectively e layer insulation film 102 formed on e silicon substrate 101 is formed and this step permits its hole to expose a diffused layer 104 at its base. A tungsten film 105 is deposited on an exposed plane of the diffused layer 104. An oxide on the surface of the tungsten film 105 is removed and is immersed in a palladium hydrochloride aqueous solution after washing it with water in order to activate the surface of the tungsten film 105. Subsequently, a nickel film 106 is selectively formed only in the hole 103 by immersing the whole substrate 101 in an electroless nickel plating liquid. This, this approach helps eliminate the need for carrying out a photolithography process.