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Electroless nickel plating

About: Electroless nickel plating is a research topic. Over the lifetime, 1593 publications have been published within this topic receiving 14940 citations.


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Journal ArticleDOI
TL;DR: In this article, a thin seed layer is deposited from neutral pH and alkaline electroless nickel baths which are annealed in the range of 400-420∘C for silicide morphology and contact resistivity studies.
Abstract: Electroless nickel plating is a suitable method for seed layer deposition in Ni–Cu-based solar cell metallization. Nickel silicide formation and hence contact resistivity of the interface is largely influenced by the plating process and annealing conditions. In the present work, a thin seed layer is deposited from neutral pH and alkaline electroless nickel baths which are annealed in the range of 400–420∘C for silicide morphology and contact resistivity studies. A minimum contact resistivity of 7 mΩ cm2 is obtained for seed layer deposited from alkaline bath. Silicide formation for Pd-activated samples leads to uniform surface morphology as compared with unactivated samples due to non-homogeneous migration of nickel atoms at the interface. Formation of nickel phosphides during annealing and the presence of SiO2 at Ni–Si interface creates isolated Ni2Si–Si interface with limited supply of silicon. Such an interface leads to the formation of high resistivity metal-rich Ni3Si silicide phase which limits the reduction in contact resistivity.

9 citations

Patent
25 Feb 1999
TL;DR: In this article, the problem of reducing a temperature when solder connected and enhancing a connecting strength of a solder by allowing a weight ratio of phosphorus to nickel in an electroless nickel plating film to fall in a specific range was addressed.
Abstract: PROBLEM TO BE SOLVED: To lower a temperature when solder connected and to enhance a connecting strength of a solder by allowing a weight ratio of phosphorus to nickel in an electroless nickel plating film to fall in a specific range, and allowing a weight ratio of the phosphorus to the nickel of a surface layer of the plating film to fall within a specific range. SOLUTION: An electroless plating film is formed on a surface of a copper of a pad shape, and further an electroless gold plating or palladium plating is formed on a nickel film. A phosphorus concentration in the nickel plating is preferably in a range of 0.01 to 0.1 by weight to nickel. If the concentration is less than 0.01, a film constitution of the nickel film is difficult, while if it is 0.1 or above, solderability is unsatisfactory. A concentration of the phosphorus in a range of 0 to 0 nm of a pole surface layer of electroless plating is preferably in a range of 0.05 to 0.4 by weight to the nickel. If the concentration is less than 0.05, it is difficult to execute gold or palladium plating on an Ni surface while if it is 0.4 or above, solderability is unsatisfactory.

9 citations

Patent
26 Jan 2011
TL;DR: In this article, a method of providing solar cell electrode by electroless plating and an activator used therein is described, which can be performed without silver paste, and comprises steps: (A) providing a silicon substrate; (B) contacting the silicon substrate with an activators, wherein the activator comprises: a noble metal or a noble metals compound, a thickening agent, and water; (C) washing the substrate by a cleaning agent; and (D) dipping the substrate in an electroless nickel plating solution.
Abstract: A method of providing solar cell electrode by electroless plating and an activator used therein are disclosed. The method of the present invention can be performed without silver paste, and comprises steps: (A) providing a silicon substrate; (B) contacting the silicon substrate with an activator, wherein the activator comprises: a noble metal or a noble metal compound, a thickening agent, and water; (C) washing the silicon substrate by a cleaning agent; (D) dipping the silicon substrate in an electroless nickel plating solution to perform electroless plating. The method of providing solar cell electrode by electroless plating of the present invention has high selectivity between silicon nitride and silicon, large working window, and is steady, easily to be controlled, therefore is suitable for being used in the fabrication of the electrodes of the solar cell substrate.

9 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of Ni encapsulation on the electrochemical properties of Ni-free alloy powders was investigated and it was found that Ni encapsulations not only enhanced the discharge capacity, but also increased the activation rate.

9 citations

Patent
27 Dec 1996
TL;DR: In this paper, an exhausted electroless nickel plating soln is removed from the exhausted soln by a chelate resin, and the soln then is processed through an electrodialytic tank, cation-exchange resin, reverse-osmosis membrane, etc.
Abstract: PROBLEM TO BE SOLVED: To effectively reutilize an exhausted electroless nickel plating soln. contg. nickel hypophosphite by removing the nickel, HPO 3 2- and salts from the exhausted soln. adding the raw material such as nickel hypophosphite to the soln. and then recycling the soln. as the electroless nickel plating soln. SOLUTION: The exhausted electroless nickel plating soln. contg. nickel hypophosphite contg. nickel ion and the hypophosphite ion as the nickel ion reducing agent, chelating agent, buffer, pH regulator, stabilizer, etc., is freed from nickel by a chelate resin. The nickel obtained is reutilized in nickel plating. The soln. freed from nickel is controlled to pH 6 to 9 by adding Ca(OH) 2 , etc., and the HPO 3 2- is precipitated as calcium hypophopsphite and removed. Subsequently, the soln. is passed through an electrodialytic tank, cation-exchange resin, reverse-osmosis membrane, etc., to remove Na + , NH 4 - , etc. The treated soln. is recycled as a fresh plating soln. raw water. COPYRIGHT: (C)1998,JPO

9 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20233
202223
202124
202033
201957
201832