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Electron backscatter diffraction

About: Electron backscatter diffraction is a research topic. Over the lifetime, 15184 publications have been published within this topic receiving 317847 citations. The topic is also known as: EBSD.


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Journal ArticleDOI
TL;DR: In this paper, the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon ingots has been investigated and a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity has been established.
Abstract: This study aims to better understand the influence of crystallographic structure and impurity decoration on the recombination activity at grain boundaries in multicrystalline silicon. A sample of the upper part of a multicrystalline silicon ingot with intentional addition of iron and copper has been investigated. Correlative electron-beam-induced current, electron backscatter diffraction, and atom probe tomography data for different types of grain boundaries are presented. For a symmetric coherent Σ3 twin boundary, with very low recombination activity, no impurities are detected. In case of a non-coherent (random) high-angle grain boundary and higher order twins with pronounced recombination activity, carbon and oxygen impurities are observed to decorate the interface. Copper contamination is detected for the boundary with the highest recombination activity in this study, a random high-angle grain boundary located in the vicinity of a triple junction. The 3D atom probe tomography study presented here is the first direct atomic scale identification and quantification of impurities decorating grain boundaries in multicrystalline silicon. The observed deviations in chemical decoration and induced current could be directly linked with different crystallographic structures of silicon grain boundaries. Hence, the current work establishes a direct correlation between grain boundary structure, atomic scale segregation information, and electrical activity. It can help to identify interface–property relationships for silicon interfaces that enable grain boundary engineering in multicrystalline silicon. Copyright © 2015 John Wiley & Sons, Ltd.

79 citations

Journal ArticleDOI
TL;DR: In this article, the effect of deformation induced defects on the hydrogen induced cracking of an ultra-low carbon (ULC) steel by subjecting it to electrochemical hydrogen charging was investigated.

79 citations

Journal ArticleDOI
TL;DR: In this paper, electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of 10 nm and 100 nm, respectively, were collected across wedge indentations in (001) Si.
Abstract: Stresses in Si as small as 10 MPa have been measured using electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of 10 nm and 100 nm, respectively. In both techniques, data were collected across wedge indentations in (001) Si. EBSD measured the stress and strain tensors and CRM measured the uniaxial stress. The results agreed very well except close to the indentation, where the surface-sensitive EBSD results indicated larger stresses. Results converged when the CRM laser excitation wavelength was reduced, probing smaller depths. The stress profiles are consistent with the inverse-square power law predicted by Eshelby analysis.

79 citations

Journal ArticleDOI
TL;DR: In this article, a constitutive equation that well describes the flow stress as a function of strain, strain rate and temperature was developed, and the active dynamic restoration mechanism was found to depend on the Zener-Hollomon parameter.
Abstract: The hot deformation behavior and static microstructure evolution of a 21Cr stabilized ferritic stainless steel was studied using axisymmetric hot compression tests on a Gleeble 1500 thermomechanical simulator. The deformation was carried out at 950–1050 °C to strains of 0.2 to 0.6 using strain rates of 0.01, 0.1 and 1 s −1 . The compression was followed by a holding period of 0 to 180 s in order to study the static recrystallization kinetics. The electron backscatter diffraction (EBSD) technique was used in analyzing the resultant microstructures. A constitutive equation that well describes the flow stress as a function of strain, strain rate and temperature was developed. The active dynamic restoration mechanism was found to depend on the Zener–Hollomon parameter, such that continuous dynamic recrystallization was observed under low Zener–Hollomon parameter conditions but under high Zener–Hollomon parameter microstructures were dynamically recovered, and no dynamic formation of new grains occurred. Static recrystallization resulted in little or no grain refinement, and further, strain did not have an accelerating effect on the static recrystallization kinetics beyond the strain of 0.4.

79 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023822
20221,600
20211,026
2020954
2019901
2018805