Topic
Electron backscatter diffraction
About: Electron backscatter diffraction is a research topic. Over the lifetime, 15184 publications have been published within this topic receiving 317847 citations. The topic is also known as: EBSD.
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TL;DR: In the absence of pre-existing failure-critical defects, the fracture or tearing process in deformable metals loaded in tension begins with the nucleation of internal cavities or voids in regions of elevated triaxial stress as discussed by the authors.
76 citations
TL;DR: In this article, a new theory of martensite transformation that is in full agreement with the experimental pole figures is proposed, which results from a fcc-hexagonal close-packed (hcp) step followed by an hcp-bcc step.
76 citations
TL;DR: In this article, the authors investigated the interaction and co-deformation of various deformation features, that lead to the outstanding mechanical properties of the titanium alloy, and revealed that permanent {332} mechanical twinning and an unstable orthorhombic martensite are the major deformation products.
76 citations
TL;DR: In this article, a new and simple method for synthesizing graphitic carbon-coated magnetic-metal (Co, Ni and Fe) nanoparticles has been reported, where the mixture of metal and diamond nanoparticles was just annealed at 1700°C in vacuum.
75 citations
TL;DR: In this paper, the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging in the scanning electron microscope was used to study tilt, atomic steps and dislocations in epitaxial GaN thin films.
Abstract: In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from a series of GaN thin films of increasing thickness and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 nm, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that electron channeling contrast images may be used to image tilt, atomic steps, and threading dislocations in GaN thin films.
75 citations