Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Fabrication and characterization of GaAs single electron devices having single and multiple dots based on Schottky in-plane-gate and wrap-gate control of two-dimensional electron gas

Abstract: Single-dot and multiple (2, 3, 18, and 37)-dot single electron transistors (SETs) based on the control of a two-dimensional electron gas (2DEG) with a recently proposed Schottky in-plane gate (IPG) and a newly introduced Schottky wrap gate (WPG) were successfully fabricated on AlGaAs/GaAs wafers using electron beam (EB) lithography and their transport properties were investigated Each of the fabricated SETs showed Coulomb blockade-like conductance oscillation In single-dot SETs, a strong correlation was found between the device dimensions and the temperature limit of the conductance oscillation Conductance oscillation characteristics of multiple-dot SETs were complicated, and were not explained by the classical Coulomb blockade theory Based on a simplified theoretical analysis using computer simulation, it was shown that quantized energy due to electron confinement and dot-coupling can dominate the charging effect in the fabricated SETs

Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing

Abstract: A planar quantum magnetic disk (QMD) with a magnetic storage density of 65 Gbit/in.2, over two orders of magnitude greater than the state‐of‐the‐art magnetic storage density, has been fabricated. The planar QMD structure consists of single‐domain nickel (magnetic) nanopillars uniformly embedded in a SiO2 (nonmagnetic) disk. Electron beam lithography was used to define the QMD bit’s size and location, and reactive ion etching was used to form an SiO2 template. Nickel electroplating was used to selectively deposit nickel into the template openings, and chemical mechanical polishing was used to planarize the surface. The resulting QMD consists of ultrahigh density arrays of single‐domain magnetic pillars with a 50 nm diameter and 100 nm period uniformly embedded in 200‐nm‐thick SiO2 and with a surface roughness of 0.5 nm root mean square. Each single‐domain structure has a quantized magnetic moment and acts as a single bit to store one bit of binary information. Furthermore, a method for mass production of Q...

Amorphous carbon films as resist masks with high reactive ion etching resistance for nanometer lithography

Abstract: We propose the application of carbon films as resist masks for practical nanometer lithography involving reactive ion etching (RIE). Amorphous carbon films prepared by room‐temperature plasma chemical vapor deposition show a very high resistance against RIE, the etching rates being less than 1/2 of that of a novolak‐based conventional photoresist. The carbon films can be finely patterned by O2 RIE in a bilayer resist process using a high‐resolution silicone‐based negative resist. Nanometer patterns as small as 40 nm are fabricated on a thick solid substrate, and can be transferred into the substrate layer directly by RIE.

Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

Abstract: We report on the sidewall and surface characterization of InP etched patterns obtained by inductively coupled plasma (ICP). The fabrication of InP based optoelectronic integrated circuits requires dry etching processes, normally using CH4/H2 gas mixtures, with low induced damage, high and reproducible etch rate, and controlled etch direction. These requirements imply the use of a high-density plasma source, which reduces the energy of ions impinging on the wafer surface while keeping a sufficient etch rate. We introduce here the use of an ICP to etch InP. We show that one can obtain anisotropic processes in SiCl4 chemistry avoiding the carrier compensation due to the H+ bombardment. The surface morphology and the pattern profiles are observed by scanning electron microscopy and by atomic force microscopy. Auger electron spectroscopy and secondary ion mass spectroscopy are used to obtain the elemental composition in the top 30 nm of the etched surface and to evaluate contamination. Transmission electron microscopy is used to observe the sidewall damage on patterns delineated by e-beam lithography. The effects of ion density, ion energy, pressure, reactor environment, and surface temperature are observed. Finally, surface damage induced on InP etched substrates are characterized through photoluminescence intensity. We observed the destructive effects of high ion energy etching processes, already reported in CH4/H2 chemistry. Some very low bias voltage processes (as low as 5 V) have been studied in the ICP equipment. It is found that extremely low surface damage and very low sidewall amorphization can be obtained in such processes while keeping high etch rate and anisotropy.

Structuring of self-assembled three-dimensional photonic crystals by direct electron-beam lithography

Abstract: An electron-beam lithography technique is described capable of structuring three-dimensional self-assembled photonic crystals. It is shown that the control of the writing depth can be achieved by varying the electron acceleration voltage. Microscopic structures with a depth from 0.4 up to 2 μm are fabricated with a typical lateral resolution of 0.4 μm. The relevance of this technique for the fabrication of deterministic defects sites in opal photonic crystals is discussed and its extension towards buried structures is suggested.