Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, an epitaxial 2 nm thick rutile TiO2 film was grown and patterned into 100-200 nm wide attachment sites by electron beam lithography.
Abstract: Triangular (111) and square-shaped (100) Pb(Zr,Ti)O3 single crystallites with lateral dimensions down to 50 nm and thickness of 20 nm have been grown using lithography-modulated self-assembly in an in situ sputter process. Epitaxial (111)-oriented Pt on a SrTiO3 single crystal served as the substrate. An epitaxial 2 nm thick rutile TiO2 film was grown and patterned into 100–200 nm wide attachment sites by electron beam lithography. The perovskite nucleation density was 60 times higher on TiO2 seeds than on bare Pt(111).
53 citations
TL;DR: In this article, a single level of PMMA was used to create positive tone patterns while a two level metal-on-polymer process was employed to create negative tone patterns, which exhibited bandstop and bandpass transmissive properties.
Abstract: Capacitive and inductive infrared mesh filters have been fabricated using electron‐beam lithography combined with a lift‐off procedure. A single level of PMMA was used to create positive tone patterns while a two‐level metal‐on‐polymer process was used to create negative tone patterns. Resonant structures consisting of arrays of crossed metal dipoles and arrays of crossed slots in otherwise continuous metal films have been fabricated that have linewidths less than 0.25 μm, and which exhibit bandstop and bandpass transmissive properties, respectively.
53 citations
TL;DR: In this article, three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets.
Abstract: Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets The devices were patterned via multiple layers of optical and electron beam lithography Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated Conductance through a single Mn12(3-thiophenecarboxylate) displays the coulomb blockade effect with several excitations within +/- 40 meV
53 citations
TL;DR: A general approach for resist-free direct electron-beam lithography of functional inorganic nanomaterials (DELFIN) which enables all-inorganic NC patterns with feature size down to 30 nm, while preserving the optical and electronic properties of patterned NCs.
Abstract: Direct optical lithography of functional inorganic nanomaterials (DOLFIN) is a photoresist-free method for high-resolution patterning of inorganic nanocrystals (NCs) that has been demonstrated using deep UV (DUV, 254 nm) photons. Here, we expand the versatility of DOLFIN by designing a series of photochemically active NC surface ligands for direct patterning using various photon energies including DUV, near-UV (i-line, 365 nm), blue (h-line, 405 nm), and visible (450 nm) light. We show that the exposure dose for DOLFIN can be ∼30 mJ/cm2, which is small compared to most commercial photopolymer resists. Patterned nanomaterials can serve as highly robust optical diffraction gratings. We also introduce a general approach for resist-free direct electron-beam lithography of functional inorganic nanomaterials (DELFIN) which enables all-inorganic NC patterns with feature size down to 30 nm, while preserving the optical and electronic properties of patterned NCs. The designed ligand chemistries and patterning techniques offer a versatile platform for nano- and micron-scale additive manufacturing, complementing the existing toolbox for device fabrication.
53 citations
TL;DR: In this article, the authors presented photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites.
Abstract: This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.
53 citations