Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers

Abstract: We have developed a fabrication scheme for two-dimensional (2D) triangular photonic crystals (PCs) on InP-based material systems involving high resolution electron beam lithography, pattern transfer to a SiO2 etch mask, and a Cl2/Ar electron cyclotron resonance reactive ion etch step yielding PCs with periods of a=300–450 nm and air fill factors of f=18%–63%. These PCs are employed as high reflectivity mirrors for 1.5 μm short cavity lasers, which are key components in future highly integrated PC based photonic circuits. We have fabricated lasers with 2 PC mirrors and cavity lengths down to 100 μm. Threshold currents as low as 7.6 mA were achieved for the shortest lasers with 2 PC mirrors. The short laser cavity results in a large Fabry–Perot mode spacing and mode competition leads to single mode lasing over a reasonably large current range up to 4.5× threshold. Lasers with one PC back mirror and a cleaved output facet show a higher threshold current of 13 mA and a maximum output power of more than 4 mW. ...

50−nm silicon structures fabricated with trilevel electron beam resist and reactive‐ion etching

Abstract: A trilevel electron beam resist has been used to make 25‐nm metal features on thick silicon substrates. Using this metal as a mask for reactive ion etching, silicon structures 0.33 μm deep have been fabricated. The resist consists of a thin upper layer of polymethylmethacrylate (PMMA), a middle layer of Ge, and a lower layer of co‐polymer of methylmethacrylate and methacrylic acid, P(MMA/MAA). High‐resolution patterns are written in the upper resist layer and are transferred to the lower layers by reactive‐ion etching. Completed resist stencils have 300‐nm high walls with near‐vertical profiles and are suitable for liftoff processing.

Reliable fabrication of 3?nm gaps between nanoelectrodes by electron-beam lithography

Abstract: The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.

Elevating optical activity: Efficient on-edge lithography of three-dimensional starfish metamaterial

Abstract: We present an approach for extremely fast, wafer-scale fabrication of chiral starfish metamaterials based on electron beam- and on-edge lithography. A millimeter sized array of both the planar chiral and the true 3D chiral starfish is realized, and their chiroptical performances are compared by circular dichroism measurements. We find optical activity in the visible and near-infrared spectral range, where the 3D starfish clearly outperforms the planar design by almost 2 orders of magnitude, though fabrication efforts are only moderately increased. The presented approach is capable of bridging the gap between high performance optical chiral metamaterials and industrial production by nanoimprint technology.