Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Three-dimensional resist process simulator PEACE (photo and electron beam lithography analyzing computer engineering system)

Abstract: A three-dimensional topographical simulator PEACE (photo and electron beam lithography analyzing computer engineering system) is discussed One of the difficulties in resist topographical simulation exists due to the three-dimensional resist development algorithm An algorithm based on the cell removal model provides accurate and stable results for the three-dimensional resist development process The program has been adapted to a supercomputer for quick computation The simulator can successfully perform the three-dimensional development in an absolutely stable manner, and good agreement can be obtained with experiments for both photo and electron beam lithography >

Fabrication of 50–100 nm Patterned InGaN Blue Light Emitting Heterostructures

Abstract: We have developed fabrication approaches and studied the optical properties of arrays of submicrometer sized InGaN/GaN MQW posts, created by patterning and etching of epitaxially grown wafer material. Two approaches have been employed: a) electron beam lithography, by which posts of individual diameter of 100 nm have been realized; b) the use of nanometer-scale self-assembled templates of porous alumina as masks, to fabricate posts on a 50 nm scale. Robust violet light emission at room temperature has been observed in such nanoscale structures.

Influence of secondary effects on the structure quality in deep X-ray lithography

Abstract: In deep X-ray lithography, synchrotron radiation is applied to pattern several hundred micrometer thick resist layers. This technique has been used to obtain micro structures with an aspect ratio up to 100. The structures are characterized by straight walls and a typical surface roughness in between 30 to 50 nm, which are a consequence of the small divergence of synchrotron radiation and the high selectivity of the resist-developer system. The precision of the microstructures are affected by photoelectrons which are generated in the resist and by diffraction of the synchrotron radiation at the absorber structures. Secondary radiation which is generated during the irradiation in the X-ray mask and the substrat, as well as the heat load, which arises from the absorbed X-rays in the mask and the resist determines the quality of the micro structures.

Laser assisted lift-off

Abstract: A method for selective removal of metallization in integrated circuits. A uniform metal film is applied over a patterned resist layer. A short pulse of radiant energy is then applied to the whole surface of the metal film. The resist underneath the metal film is locally heated enough to cause outgassing, which breaks the mechanical bond between the metal film and the resist. The metal film over the patterned resist layer is then removed, leaving the deposited metal film in place over areas which were not covered by the resist film.

Tailoring gold nanostructures for near-field optical applications

Abstract: A method of combined thin-film deposition, electron beam lithography, and ion milling is presented for the fabrication of gold and silver nanostructures. The flexibility of lithographical processes for the variation of geometric parameters is combined with three-dimensional control over the surface evolution. Depending on the etching angle, different shapes ranging from cones over rods to cups can be achieved. These size- and shape-tunable structures present a toolbox for nano-optical investigations. As an example, optical properties of systematically varying structures are examined in a parabolic mirror confocal microscope.