Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, the polarization conversion capabilities of planar chiral structures imprinted in dielectric materials have been experimentally demonstrated and the developed processes in this work have the prospect of manufacturing planar photonic meta media in high volume at low cost.
45 citations
TL;DR: In this paper, a combination of electron beam lithography (EBL) with the outstanding capabilities of closed-loop electric field current-controlled scanning probe nanolithography (SPL) is demonstrated.
Abstract: Going “beyond the CMOS information-processing era,” taking advantage of quantum effects occurring at sub-10-nm level, requires novel device concepts and associated fabrication technologies able to produce promising features at acceptable cost levels. Herein, the challenge affecting the lithographic technologies comprises the marriage of down-scaling the device-relevant feature size towards single-nanometer resolution with a simultaneous increase of the throughput capabilities. Mix-and-match lithographic strategies are one promising path to break through this trade-off. Proof-of-concept combining electron beam lithography (EBL) with the outstanding capabilities of closed-loop electric field current-controlled scanning probe nanolithography (SPL) is demonstrated. This combination, whereby also extreme ultraviolet lithography (EUVL) is possible instead of EBL, enables more: improved patterning resolution and reproducibility in combination with excellent overlay and placement accuracy. Furthermore, the symbiosis between EBL (EUVL) and SPL expands the process window of EBL (EUVL) beyond the state of the art, allowing SPL-based pre- and post-patterning of EBL (EUVL) written features at critical dimension levels with scanning probe microscopy-based pattern overlay alignment capability. Moreover, we are able to modify the EBL (EUVL) pattern even after the development step. The ultra-high resolution mix-and-match lithography experiments are performed on the molecular glass resist calixarene using a Gaussian e-beam lithography system operating at 10 keV and a home-developed SPL setup.
45 citations
TL;DR: A silicon quantum wire transistor, in which electrons are transported through a very narrow wire, has been fabricated using silicon-on-insulator technology, electron beam lithography, anisotropic dry etching, and thermal oxidation as discussed by the authors.
Abstract: A silicon quantum wire transistor, in which electrons are transported through a very narrow wire, has been fabricated using silicon-on-insulator technology, electron beam lithography, anisotropic dry etching, and thermal oxidation. We have obtained the quantum wire with a width of 65 nm, which is fully embedded in silicon dioxide. This narrow dimension of the wire and large potential barrier between silicon and silicon dioxide make the electrons moving through the wire experience one-dimensional confinement. The step-like structure in the conductance versus gate voltage curve, which is a typical evidence of one-dimensional conductance, has been observed at temperatures below 4.2 K. A period of step appearance and a step size have been analyzed to compare experimental characteristics with theoretical calculation.
45 citations
01 Sep 2001
TL;DR: In this paper, the mesoscopic Josephson junction qubits are fabricated by electron beam lithography using single-layer and multilayer resists, which is simpler and more accurate to implement, and avoids the significant areas of redundant metallisation that are an unavoidable byproduct of the tri-layer shadow mask method.
Abstract: The authors have developed two distinct processes for the fabrication of mesoscopic Josephson junction qubits that are compatible with conventional CMOS processing. These devices, based on superconducting Al/Al/sub 2/O/sub 3//Al tunnel junctions, are fabricated by electron beam lithography using single-layer and multilayer resists. The new single-layer resist process is found to have significant advantages over conventional fabrication methods using suspended tri-layer shadow masks. It is simpler and more accurate to implement, and avoids the significant areas of redundant metallisation that are an unavoidable by-product of the tri-layer shadow mask method.
45 citations
TL;DR: In this paper, the authors proposed a UV-based nano imprint and transfer lithography (NITL) approach for defining sub-micron metal patterns on optical fiber facets in a single processing step.
Abstract: UV-based nano imprint and transfer lithography (NITL) is proposed as a flexible, low cost and versatile approach for defining sub-micron metal patterns on optical fiber facets in a single-processing step. NITL relies on a specially prepared mold carrying the pattern that is to be transferred to the facet. The fiber's light-guiding properties allow control of the position of the metal structures by optical alignment.
45 citations