Topic
Electron-beam lithography
About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.
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TL;DR: In this paper, the history of optical lithography from its early days until the sub-100nm era is narrated, and the techniques to prolong its ending, such as high-index immersion fluid and lens material, polarized illumination, mask solid immersion, double exposures, and pitch splitting are discussed.
44 citations
TL;DR: It has been demonstrated that the measured diffraction efficiency values agreed well with the rigorous theoretical ones and could be used as key devices in a high-density optical disk pickup of the next generation.
Abstract: Blazed diffractive optical elements (DOEs) were studied for the violet wavelength by electron-beam lithography By optimizing electron-beam writing parameters and electron-dose distributions, we fabricated eight kinds of grating (period A = 10-054 microgm) with excellent blazed structure It has been demonstrated that the measured diffraction efficiency values agreed well with the rigorous theoretical ones For the fine period of 054 microm, we confirmed a peak appearance of 756% (TE) experimentally A wave aberration as small as approximately 001 lambda (rms) was obtained for the first-order diffracted wave from the fabricated DOEs Blazed DOEs for the violet wavelength could be used as key devices in a high-density optical disk pickup of the next generation
44 citations
TL;DR: In this paper, a phenomenological depth-dose theory was applied to the exposure of negative electron resists and the model predicts a cross-linking rate dnc/dt=(Gc/100) × (J0/e)(Va/RG)Λ(f) cm−3 sec−1, where Gc is the number of crosslinks produced per 100 eV lost in the polymer.
Abstract: The application of a phenomenological depth‐dose theory to the exposure of negative electron resists is described in detail. The model predicts a cross‐linking rate dnc/dt=(Gc/100) × (J0/e)(Va/RG)Λ(f) cm−3 sec−1, where Gc is the number of crosslinks produced per 100 eV lost in the polymer. Jo is the incident current density, Va the initial kinetic energy, RG the electron Grun range, and Λ(f) the depth‐dose function in terms of the normalized penetration f=z/RG. Since the G value of a negative resist decreases with exposure, it is suggested that a more meaningful parameter characterizing a negative resist is the absorbed energy required to gel the polymer at the resist‐substrate interface. This interface or threshold gel energy density, Eg(i), is independent of the beam parameters and varies from about 1022 eV cm−3 for polyvinyl ferrocene to 3.8×1018 eV cm−3 for epoxidized polybutadienes. The model predicts that the threshold sensitivity should vary as Va0.75 which agrees reasonably well with published exp...
44 citations
TL;DR: The fabrication of conducting, nanometer-sized carbon structures using a combination of electron beam lithography (EBL) and carbonisation is reported, demonstrating a structure consisting of both amorphous and graphitized carbon with low levels of oxygen.
Abstract: The incorporation of carbon materials in micro- and nanoscale devices is being widely investigated due to the promise of enhanced functionality. Challenges in the positioning and addressability of carbon nanotubes provide the motivation for the development of new processes to produce nanoscale carbon materials. Here, the fabrication of conducting, nanometer-sized carbon structures using a combination of electron beam lithography (EBL) and carbonisation is reported. EBL is used to directly write predefined nanometer-sized patterns in a thin layer of negative resist in controllable locations. Careful heat treatment results in carbon nanostructures with the size, shape, and location originally defined by EBL. The pyrolysis process results in significant shrinkage of the structures in the vertical direction and minimal loss in the horizontal direction. Characterization of the carbonized material indicates a structure consisting of both amorphous and graphitized carbon with low levels of oxygen. The resistivity of the material is similar to other disordered carbon materials and the resistivity is maintained from the bulk to the nanoscale. This is demonstrated by fabricating a nanoscale structure with predictable resistance. The ability to fabricate these conductive structures with known dimensions and in predefined locations can be exploited for a number of applications. Their use as nanoband electrodes is also demonstrated.
44 citations
TL;DR: In this paper, the authors describe the electron optical column used in the M×M direct-write system, which is capable of meeting the resolution requirements of all future ITRS nodes and has a significant cost of ownership advantage over masked technologies.
Abstract: Electron beam direct-write lithography systems are capable of meeting the resolution requirements of all future ITRS nodes and have a significant cost of ownership advantage over masked technologies, but these systems typically have very poor throughput due to space charge limitations. Ion Diagnostics has developed a multicolumn, multibeam (M×M™) direct-write system that circumvents the space charge limitations by spreading the electron current over the wafer. The resulting lithography system can achieve critical dimensions of less than 100 nm with production throughputs greater than 60 wafers per hour, independent of wafer size. In this article we describe the electron optical column used in this system. We have developed a novel, microfabricated electron gun that produces 32 parallel electron beams that are individually controlled and blanked and contain deflectors that allow the gun optics to act as a perfect lens. Each column is 2 cm×2 cm and can align and scan the 32 beams in parallel on the wafer. The wafer voltage is typically held at 50–100 kV, and backscattered electrons are collected for imaging and alignment information. Theoretical results and some performance results for a prototype column are presented.
44 citations