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Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.


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Journal ArticleDOI
TL;DR: In this paper, a novel microfabrication method for heteroepitaxial diamond was developed, where the ir surfaces were treated with ion irradiation of CH 4 /H 2 gas by dc discharge using planar diode resist masks were patterned on the ion irradiated Ir surface by electron-beam lithography.

43 citations

Journal ArticleDOI
TL;DR: In this paper, a large area array of MOM tunneling diodes with an ultrathin dielectric ( ~ 3.6-nm aluminum oxide) has also been fabricated via the transfer-printing process.
Abstract: Infrared (IR) detectors have been fabricated consisting of antenna-coupled metal-oxide-metal diodes (ACMOMDs). These detectors were defined using electron beam lithography with shadow evaporation metal deposition. They are designed to be sensitive to the IR range and work at room temperature without cooling or biasing. In order to achieve large arrays of ACMOMDs, nanotransfer printing have been used to cover a large area with metal-oxide-metal (MOM) diodes and with antenna structures. The printed antenna structures consist of gold and aluminum and exhibit a low electrical resistivity. A large area array of MOM tunneling diodes with an ultrathin dielectric ( ~ 3.6-nm aluminum oxide) has also been fabricated via the transfer-printing process. The MOM diodes exhibit excellent tunneling characteristics. Both direct and Fowler-Nordheim tunneling has been observed over eight orders of magnitude in current density. Static device parameters have been extracted via kinetic Monte Carlo simulations and have confirmed the existence of a dipole layer at the aluminum/aluminum oxide interface of the printed tunneling diodes. The mechanical yield of the transfer-printing process for the MOM tunneling diodes is almost a 100%, confirming that transfer printing is suitable for large area effective fabrication of these quantum devices.

43 citations

Journal ArticleDOI
TL;DR: In this article, the magnitude of blur intrinsic to the reaction mechanism of chemically amplified electron beam (EB) resists was examined by a simulation based on reaction mechanism and the acid generation efficiency per ionization (secondary electron generation) was also theoretically estimated.
Abstract: Acid generation processes of chemically amplified resists for electron beam (EB) lithography are different from those of chemically amplified photoresists Although acid generators decompose mainly via their excited state in photoresists, they decompose through electron attachment in EB resists This difference causes significant blur (degradation of contrast) in latent acid images of EB resists because typical acid generators can react with low-energy electrons (∼0eV) It has been widely accepted that the contrast is strongly correlated to line edge roughness We examined the magnitude of blur intrinsic to the reaction mechanism of chemically amplified EB resists by a simulation based on the reaction mechanism The acid generation efficiency per ionization (secondary electron generation) was also theoretically estimated The resolution blur and efficiency of current organic resist materials are considered to lie within 46–103nm and 039–085, respectively

43 citations

Journal ArticleDOI
TL;DR: In this article, a negative tone fullerene-derivative molecular resist was fabricated using helium ion beam lithography (HIBL) and shown to have a sensitivity of 40µC/cm2 with a 30keV helium beam.

43 citations

Journal ArticleDOI
TL;DR: Two possible illumination schemes utilizing surface plasmon effects to achieve high density sub-100 nm scale photolithography by using ultraviolet light from a mercury lamp offer convenient, low cost, and massive pattern transfer methods by simple adjustment to the traditional Photolithography method.
Abstract: In this paper, based on numerical study using Finite Difference Time Domain method, we discuss two possible illumination schemes utilizing surface plasmon effects to achieve high density sub-100 nm scale photolithography by using ultraviolet light from a mercury lamp. In the illumination schemes discussed in this paper, a thin film layer, named as shield layer, is placed in between a photoresist layer and a silicon substrate. In the first scheme, the shield material is titanium. Simulations show that the surface plasmons excited on both the metallic mask and the titanium shield enable the transfer of high density nanoscale pattern using mercury lamp emission. In the second scheme, a silicon dioxide layer is used instead of the titanium to avoid possible metal contamination. The two schemes discussed in this paper offer convenient, low cost, and massive pattern transfer methods by simple adjustment to the traditional photolithography method.

43 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202384
2022163
2021108
2020161
2019174
2018204