Electron-beam lithography

About: Electron-beam lithography is a research topic. Over the lifetime, 8982 publications have been published within this topic receiving 143325 citations. The topic is also known as: e-beam lithography.

Fabrication of 20‐nm structures in GaAs

Abstract: Structures as small as 20 nm have been fabricated in GaAs by high‐resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single‐layer electron beam resist. This metal mask pattern was transferred into the III‐V material by etching in a SiCl4 plasma

Plasmonic arrays of titanium nitride nanoparticles fabricated from epitaxial thin films.

Abstract: We have fabricated two-dimensional periodic arrays of titanium nitride (TiN) nanoparticles from epitaxial thin films. The thin films of TiN, deposited on sapphire and single crystalline magnesium oxide substrates by a pulsed laser deposition, are metallic and show reasonably small optical loss in the visible and near infrared regions. The thin films prepared were structured to the arrays of nanoparticles with the pitch of 400 nm by the combination of nanoimprint lithography and reactive ion etching. Optical transmission indicates that the arrays support the collective plasmonic modes, where the localized surface plasmon polaritons in TiN nanoparticles are radiatively coupled through diffraction. Numerical simulation visualizes the intense fields accumulated both in the nanoparticles and in between the particles, confirming that the collective mode originates from the simultaneous excitation of localized surface plasmon polaritons and diffraction. This study experimentally verified that the processing of TiN thin films with the nanoimprint lithography and reactive ion etching is a powerful and versatile way of preparing plasmonic nanostructures.

Domain structure in magnetic dots prepared by nanoimprint and e-beam lithography

Abstract: Square arrays of silicon dots with feature sizes from 30 to 400 nm and periodicities from 60 to 500 nm were obtained by standard lithography or nanoimprint and reactive ion etching. Co/Pt multilayers with perpendicular anisotropy were subsequently deposited by magnetron sputtering onto these prepatterned wafers. The deposition was performed either at normal or oblique incidence. The magnetic domain structures were characterized by magnetic force microscopy after zero field cooling (ZFC) from the (Co/Pt) Curie temperature or by alternative demagnetization (AD). It appears that the angle of deposition of the Pt influences the existence of direct exchange coupling between neighboring dots due to the formation of a magnetic layer on the sidewalls of the dots.

Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching

Abstract: This article proposes a nanofabrication technique for fabricating quantum wires with dimensions in the sub-10 nm regime. This technique consists of partially shifted resist-pattern formation and orientation-dependent Si etching that takes advantage of the difference in the crystallographic properties of the {111} planes and the other planes. When {110} Si substrates are etched using a partially shifted pattern as a mask, the etching generates a smooth {111} side plane and eventually forms a straight Si line pattern whose width is equal to the difference between the size of the shift and the originally exposed linewidth. Therefore, line patterns smaller than the beam diameter of lithographic tools can be formed. We show the effectiveness of this technique by fabricating a 2-nm-wide Si line. The electrical conductance characteristics of the Si nanoline formed by this technique are also shown.